Small signal modulation characteristics of red-emitting (λ = 610 nm) III-nitride nanowire array lasers on (001) silicon

Jahangir, Shafat; Frost, Thomas; Hazari, Arnab; Yan, Lifan; Stark, Ethan; LaMountain, Trevor; Millunchick, Joanna Mirecki; Ooi, Boon S.; Bhattacharya, P.

doi:10.1063/1.4913317

Cited by 31 publications

(17 citation statements)

References 27 publications

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“…4(b), was analyzed with the relation: J th (T) ¼ J th0 Áexp(T/ T 0 ) from which a value of T 0 ¼ 242 K was derived. This value is significantly higher than those measured for GaAsbased $1.0 lm quantum well lasers 26 and comparable to visible III-nitride nanowire lasers reported previously, 12,27 indicating that the temperature stability of nanowire lasers is very promising. The high value of T 0 , in most part, is attributed to the large band offsets in the quantum disk heterostructure and the resulting reduction of carrier leakage.…”

Section: à2contrasting

confidence: 47%

III-nitride disk-in-nanowire 1.2 μm monolithic diode laser on (001)silicon

Hazari

Aiello

et al. 2015

Applied Physics Letters

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III-nitride nanowire diode heterostructures with multiple In0.85Ga0.15N disks and graded InGaN mode confining regions were grown by molecular beam epitaxy on (001)Si substrates. The aerial density of the 60 nm nanowires is ∼3 × 1010 cm−2. A radiative recombination lifetime of 1.84 ns in the disks is measured by time-resolved luminescence measurements. Edge-emitting nanowire lasers have been fabricated and characterized. Measured values of Jth, T0, and dg/dn in these devices are 1.24 kA/cm2, 242 K, and 5.6 × 10−17 cm2, respectively. The peak emission is observed at ∼1.2 μm.

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Section: à2contrasting

confidence: 47%

III-nitride disk-in-nanowire 1.2 μm monolithic diode laser on (001)silicon

Hazari

Aiello

et al. 2015

Applied Physics Letters

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“…Preliminary reliability measurements indicated a lifetime of 7000 h. Li et al [126] grew disordered axial n-, i-, p-AlGaN NWs arrays on n-Si to form random resonance cavity using Anderson localization effect. (Figure 4g, h) [127][128][129][130] A Ni/Au p-type and Ti/Au n-type contacts were deposited on the top of NWs and the backside of the substrate respectively. They demonstrated electrically-pumped lasers across the entire ultraviolet AII (UV-AII) band (∼320-340 nm) at low temperatures with a low lasing threshold of ∼12 A/cm 2.…”

Section: Achieving Electrically-pumped Lasingmentioning

confidence: 99%

Toward electrically driven semiconductor nanowire lasers

Zhang

Saxena

Aagesen³

et al. 2019

Nanotechnology

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Semiconductor NanoWire (NW) lasers are highly promising for making new generation coherent light sources with the advantages of ultra-small size, high efficiency, easy integration and low cost. Over the past 15 years, this area of research has been developing rapidly, with extensive reports of optically pumped lasing in various inorganic and organic semiconductor NWs. Motivated by these developments, substantial efforts are being made to make NW lasers electrically pumped, which is necessary for their practical implementation. In this review, we first categorise the NW lasers according to the lasing wavelength and wavelength tunability. Then, we summarize the methods used for achieving single-mode lasing in NWs. After that, we review the reports on lasing threshold reduction and the realization of electrically-pumped NW lasers. Finally, we offer our perspective on future improvements and trends.

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“…Besides, the geometry of NWs will also increase the light extraction efficiency of LEDs. 15,24 Although the material quality of NWs is high, the large surface area of NWs also induces new properties. NW-LEDs show a lot of advantages over the two-dimensional planar LEDs, such as, reduced piezoelectric polarization field, efficiency droop elimination, wavelength tunability to close the "green gap" and light extraction enhancement.…”

Section: Introductionmentioning

confidence: 99%

An enhanced surface passivation effect in InGaN/GaN disk-in-nanowire light emitting diodes for mitigating Shockley–Read–Hall recombination

Zhao

Prabaswara

et al. 2015

Nanoscale

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We present a detailed study of the effects of dangling bond passivation and the comparison of different sulfide passivation processes on the properties of InGaN/GaN quantum-disk (Qdisk)-in-nanowire based light emitting diodes (NW-LEDs). Our results demonstrated the first organic sulfide passivation process for nitride nanowires (NWs). The results from Raman spectroscopy, photoluminescence (PL) measurements, and X-ray photoelectron spectroscopy (XPS) showed that octadecylthiol (ODT) effectively passivated the surface states, and altered the surface dynamic charge, and thereby recovered the band-edge emission. The effectiveness of the process with passivation duration was also studied. Moreover, we also compared the electro-optical performance of NW-LEDs emitting at green wavelength before and after ODT passivation. We have shown that the Shockley-Read-Hall (SRH) non-radiative recombination of NW-LEDs can be greatly reduced after passivation by ODT, which led to a much faster increasing trend of quantum efficiency and higher peak efficiency. Our results highlighted the possibility of employing this technique to further design and produce high performance NW-LEDs and NW-lasers.

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Small signal modulation characteristics of red-emitting (λ = 610 nm) III-nitride nanowire array lasers on (001) silicon

Abstract: CitationSmall signal modulation characteristics of red-emitting ( = 610nm) III-nitride nanowire array lasers on (001) silicon 2015, 106 (7):071108 Applied Physics Letters

Cited by 31 publications

References 27 publications

III-nitride disk-in-nanowire 1.2 μm monolithic diode laser on (001)silicon

III-nitride disk-in-nanowire 1.2 μm monolithic diode laser on (001)silicon

Toward electrically driven semiconductor nanowire lasers

An enhanced surface passivation effect in InGaN/GaN disk-in-nanowire light emitting diodes for mitigating Shockley–Read–Hall recombination

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