Smart Power Devices Nanotechnology

Meneghesso, Gaudenzio; Moens, P.; Östling, Mikael; Šonský, Jan; Stoffels, Steve

doi:10.1002/9783527800728.ch7

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2019

2022

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“…In recent years, saving of electric energy has become an important subject, and researches on smart power technology are becoming active. [1][2][3] In order to scale down the power device sizes necessary for that purpose, wide band gap semiconductor devices have attracted attention. [4][5][6][7][8][9][10][11][12][13][14][15] In particular, GaN MOSFETs are expected to be applied to integration, including control circuits and drive circuits.…”

Section: Introductionmentioning

confidence: 99%

A time-dependent Verilog-A compact model for MOS capacitors with interface traps

Fukuda

Asai

Hattori

et al. 2019

Jpn. J. Appl. Phys.

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A modeling method to analyze transient behaviors of MOS capacitors including interface traps by circuit simulation is proposed. Through applications to GaN MOS capacitors, plateau, frequency dispersion, and hysteresis are obtained as typical trap influences on C–V characteristics. Examples of more complicated cases are demonstrated, including the influence of the energy distribution of the trap, cases with multiple peaks in the trap energy distribution, cases where resistors are connected in series as a circuit. Through these examples, it is expected that this modeling method using circuit simulation will be useful for modeling experimental results of trap-affected MOS capacitors.

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