SmartSiC™ for Manufacturing of SiC Power Devices

Daval, N.; Drouin, Alexis; Biard, H.; Viravaux, L.; Radisson, D.; Rouchier, S.; Gaudin, G.; Widiez, J.; Allibert, F.; Rolland, E.; Vladimirova, Kremena; Gelineau, G.; Troutot, N.; Navone, Christelle; Berre, Guillaume; Bosch, D.; Leow, Y.L; Duboust, Alain; Bethoux, J-M.; Boulet, Romain; Chapelle, Audrey; Cela, E.; Lavaitte, G.; Bouville-Lallart, A.; Bhargava, S.; Schwarzenbach, W.; Maddalon, C.; Radu, Ionut; Odoul, S.; Delprat, D.; Bonnin, Olivier; Maleville, Christophe

doi:10.1109/edtm53872.2022.9798032

2022 6th IEEE Electron Devices Technology &Amp; Manufacturing Conference (EDTM) 2022

DOI: 10.1109/edtm53872.2022.9798032

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SmartSiC™ for Manufacturing of SiC Power Devices

N. Daval

Alexis Drouin

H. Biard

et al.

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High temperature evolution of interfacial metal film bonding two 4H-SiC substrates

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SmartSiC™ for Manufacturing of SiC Power Devices

Cited by 2 publications

References 1 publication

High temperature evolution of interfacial metal film bonding two 4H-SiC substrates

High temperature evolution of interfacial metal film bonding two 4H-SiC substrates

A Novel Approach for Thin 4H-SiC Foil Realization Using Controlled Spalling from a 4H-SiC Wafer

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