2006
DOI: 10.1140/epjb/e2006-00440-2
|View full text |Cite
|
Sign up to set email alerts
|

Smearing origin of zero-bias conductance peak in Ag-SiO-Bi2Sr2CaCu2O8+δ planar tunnel junctions: influence of diffusive normal metal verified with the circuit theory

Abstract: Abstract. We propose a new approach of smearing origins of a zero-bias conductance peak (ZBCP) in high-Tc superconductor tunnel junctions through the analysis based on the circuit theory for a d-wave pairing symmetry. The circuit theory has been recently developed from conventional superconductors to unconventional superconductors. The ZBCP frequently appears in line shapes for this theory, in which the total resistance was constructed by taking account of the effects between a d-wave superconductor and a diff… Show more

Help me understand this report
View preprint versions

Search citation statements

Order By: Relevance

Paper Sections

Select...
1

Citation Types

0
1
0

Year Published

2008
2008
2013
2013

Publication Types

Select...
3

Relationship

1
2

Authors

Journals

citations
Cited by 3 publications
(1 citation statement)
references
References 85 publications
(119 reference statements)
0
1
0
Order By: Relevance
“…Using the fully-epitaxial NbN/Co2MnSi bilayer films, junctions for Andreev reflection measurements were made with the circular pillars in the range between 40 nm and 4 m in diameter by an electron-beam lithography technique. The differential conductance of NbN/Co2MnSi junctions was measured using a physical property measurement system (PPMS) by a conventional modulation technique 8) in the temperature range between 2K and 20 K. Table 1. The mismatch of lattice constants between a MgO(001) substrate and a NbN(001) film was improved with the decrease of nitrogen partial pressures.…”
Section: Methodsmentioning
confidence: 99%
“…Using the fully-epitaxial NbN/Co2MnSi bilayer films, junctions for Andreev reflection measurements were made with the circular pillars in the range between 40 nm and 4 m in diameter by an electron-beam lithography technique. The differential conductance of NbN/Co2MnSi junctions was measured using a physical property measurement system (PPMS) by a conventional modulation technique 8) in the temperature range between 2K and 20 K. Table 1. The mismatch of lattice constants between a MgO(001) substrate and a NbN(001) film was improved with the decrease of nitrogen partial pressures.…”
Section: Methodsmentioning
confidence: 99%