Sn-Doped CdS Nanowires with Low-Temperature Lasing by CW-Laser Excitation

Abstract

Sn-doped CdS nanowires, with the inside coexisting Sn(II)S, Sn 2 (III)S 3 , and Sn(IV)S 2 identified by in situ Raman and XPS spectra, are grown via a simple thermal evaporation deposition technique. Its room-temperature photoluminescence (PL) spectrum shows a broad in-gap emission band out of different Sn dopants which is also superposed by a series of weak modes from a microcavity due to the wire size and its structure, besides the CdS band-edge emission and a side-band emission due to SnS 2. The ratio of the intensity of the ingap emission versus that of the band-edge emission is only 1/4 at room temperature, but it can be remarkably increased to about 7 at 80 K. This significant enhancement of the in-gap emission may be attributed to the local plasma coming from more bound carriers and enhanced microcavity effect at low temperature by analyzing the temperature-dependent PL and Raman spectra in detail. For these reasons, the bandedge and in-gap emission both can realize lasing excited by a continuous laser at 80 K. The results would provide a way to get temperature tunable low threshold microscale lasers and study the plasma-polariton process within a microcavity.

Light Harvesting from Oxygen Vacancies and A- and B-Site Dopants in CaSnO3 Perovskite through Efficient Photon Utilization and Local Site Engineering

“…Not many reports exist in the literature on emission of host CaSnO 3 . Sometimes, Sn 3+ contributes in visible PL, as reported elsewhere . We have completely ruled out this possibility by XANES measurement (Figure d) which confirmed the existence of tin as the Sn 4+ ion in CSO.…”

“…Sometimes, Sn 3+ contributes in visible PL, as reported elsewhere. 57 We have completely ruled out this possibility by XANES measurement (Figure 1d) which confirmed the existence of tin as the Sn 4+ ion in CSO. Zhang et al have reported a broad band in the blue emission region centered around 410 nm.…”

Flexible Photodetectors with High Responsivity and Broad Spectral Response Employing Ternary SnxCd1–xS Micronanostructures

“…Similarly, Figure c illustrates the confirmation of the S 2p region and the peak located at 161.51 eV . The Sn 3d spectrum shows one major peak corresponding to Sn 3d 3/2 located at 497.08 eV (Figure d) . The C 1s and O 1s peaks located at 284.76 and 530.60 eV in the survey spectrum are probably due to surface contamination, and these two components have disappeared in the EDS spectrum.…”

“…46 The Sn 3d spectrum shows one major peak corresponding to Sn 3d 3/2 located at 497.08 eV (Figure 3d). 47 The C 1s and O 1s peaks located at 284.76 and 530.60 eV in the survey spectrum are probably due to surface contamination, and these two components have disappeared in the EDS spectrum. Moreover, all the observed peaks agreed well with the literature values.…”

Repeatedly and Superbroad Wavelength Tuning Microcavity in a Single Sn-Doped CdS Microcone

“…Figure S2 shows the element distribution of the whole sample, which can show the distribution of Sn, Cd, and S on the whole sample, and the dopant content (Sn element) inhomogeneous distribution is still too low to be detected. In our experimental process, SnS 2 is likely to form via the following reactions , …”