Sn-doped CsPbBr3 QDs glasses with excellent stability and optical properties for WLED

Liu, Shengnan; Shao, Guangzhang; Ding, Ling; Liu, Jianming; Xiang, Weidong

doi:10.1016/j.cej.2018.12.147

Cited by 107 publications

(67 citation statements)

References 42 publications

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“…[ 31 ] However, the symmetrical XPS peaks of Pb 4f in T‐CsPbBr 3 and T‐CsPbBr 3 : La 3+ NCs clearly suggests that these perovskites particles that were in situ formed in the transparent medium have a nearly defect‐free surface. [ 32 ] In addition, the Pb 4f peak of T‐CsPbBr 3 NCs locates at 139.68 and 144.28 eV, while that of T‐CsPbBr 3 : La 3+ NCs shift to 139.18 and 143.73 eV, respectively. It is speculated that the change comes from the increased electron density around Pb 2+ after La 3+ doping since higher bonding interaction between La 3+ and Br − (LaBr: 446.2 kJ mol −1 , PbBr: 248 kJ mol −1 ) leads to less electron contribution from Pb to Br [ 33,34 ] Clearly, XPS and echoed PL (different doping concentrations with La 3+ ) show that La 3+ was successfully incorporated into our T‐CsPbBr 3 NCs.…”

Section: Resultsmentioning

confidence: 99%

“…It is ascribed to the fact that T‐CsPbBr 3 : La 3+ NCs possess the fascinating color purity reaches 89.9% (Figure 5d), which is indeed more saturated compared with the commercial LPL phosphors. [ 8–17 ]…”

Section: Resultsmentioning

confidence: 99%

“…Nevertheless, it is pointed out that high color purity of the developed LPL materials is hardly achieved, as the emission usually comes from localized electron transitions that combine with the released carriers assisted by thermal disturbance, producing multi‐peaks for the f‐f transitions [ 12–14 ] or a wide full width at half maximum (FWHM >50 nm) for the f‐d transitions. [ 15–17 ] It severely restricts advanced image recognition and poses major challenges for the accuracy and security of the recorded information for optical storage and anti‐counterfeiting technology. [ 18,19 ]…”

Section: Introductionmentioning

confidence: 99%

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Long Persistent Luminescence from All‐Inorganic Perovskite Nanocrystals

Zhang

Yang

Zhao

et al. 2020

Advanced Optical Materials

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The advantages of ultrahigh https://photoluminescence quantum yield and narrow spectral bandwidth of all‐inorganic lead halide perovskite https://nanocrystals (NCs) enable them as the most potential candidates for optoelectronic applications. However, it is difficult to obtain long persistent luminescence from inorganic perovskite https://nanocrystals as the creation of effective trapping centers comes along with the generation of nonradioactive recombination centers. Here, replacing Pb2+ by appropriate lanthanide ions (Ln3+) in CsPbBr3 https://nanocrystals that are embedded inside an amorphous transparent medium via a high‐temperature (≈500 °C) fabrication process is proposed to achieve stable and effective trapping centers. Furthermore, the surface coating of the enclosed https://nanocrystals prevents the formation of surface defects, leading to long persistent luminescence from CsPbBr3: Ln3+ NCs. The CsPbBr3: Ln3+ NCs with unprecedented high color purity (≈89.9%) and long lasting time of more than 1800 s could be a promising candidate for the application in anti‐counterfeiting.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Long Persistent Luminescence from All‐Inorganic Perovskite Nanocrystals

Zhang

Yang

Zhao

et al. 2020

Advanced Optical Materials

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“…Ion doping is a promising strategy in adjusting the electronic and optical properties of QDs [120]. For HP-QDs, it was verified that introducing metal ions like Mn 2+ [121][122][123][124], Sn 2+ [121,125], Ce 3+ [126], Eu 3+ [127] into the perovskite lattice of CsPbX 3 QD could help reach tunable energy gap [123], enhanced thermal stability [121] and improved PL efficiency [126]. The fabrication strategies of ion doping contains hotinjection and melt-quenching.…”

Section: Ion Dopingmentioning

confidence: 99%

“…Sn 2+ :CsPbBr 3 QDs composite was obtained similarly using SnBr 2 instead as the source of Sn 2+ . This method promised enhanced stability against heat and open air due to the protection of glass in the synthesis process [125].…”

Section: Ion Dopingmentioning

confidence: 99%

Recent advances in synthesis and application of perovskite quantum dot based composites for photonics, electronics and sensors

Wang

Ding

Mao

et al. 2020

Science and Technology of Advanced Materials

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Near‐Unity Quantum Yield and Superior Stable Indium‐Doped CsPbBr_xI₃₋_x Perovskite Quantum Dots for Pure Red Light‐Emitting Diodes

Zhou

Zhang

Tong

et al. 2021

Advanced Optical Materials

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The reported external quantum efficiencies (EQEs) of red-emitting PeLEDs based on CsPbBr x I 3−x perovskite are listed in Table S1 (Supporting Information). However, the soft basic nature of I − [1,[16][17][18][19] and the phase separation arising from halide ion migration cause low stability of CsPbBr x I 3−x PeQDs, making CsPbBr x I 3−x more difficult to apply to pure red PeLEDs. [11] Therefore, pure red PeLEDs based on CsPbBr x I 3−x perovskite with a high EQE and excellent stability remain a huge challenge. In previous research, the photoluminescence (PL) quantum yield (PLQY) and stability of PeQDs have been explored, including encapsulation by adding silicon oxide or aluminum oxide, [20,21] passivation of quantum dots (QDs) by PbSe, [22] and the use of additional ligands. [2,9,12,[23][24][25] However, the above-mentioned insulative oxide, PbSe, and ligands inevitably hinder the charge transfer of PeQDs, resulting in poor conductivity.Recently, a new strategy for metal ion doping has been proposed to improve the PLQY and stability of PeQDs, [10,[26][27][28][29][30][31][32][33][34] and solve the problem of lead toxicity. [31,35,36] For example, Yang et al. used K + ions to acquire high-color-stable red PeLEDs by the passivation effect, whereas the EQE of K + -PeLEDs was only 3.55%. [10] PeQDs modified by lanthanide (Ln 3+ ) ions were more stable than the corresponding pristine sample. [29] The PeQDdoped Sn 2+ soft ions contributed to the limited stability in applications, in which Sn 2+ ions were easily oxidized to Sn 4+ in air. [31] In addition to these metal ions, metal In 3+ ions have attracted attention in the field of solar cell applications. Liu et al. reported that an improvement in the power conversion efficiency of 13% for CsPbI 2 Br solar cells was obtained because the In 3+ ions located diagonally adjacent to Pb passivated the defects of the CsPbI 2 Br perovskite film. [36] However, to the best of our knowledge, In 3+ ions are rarely used in PeLEDs. Therefore, the synthesis of In 3+ -doped PeQDs and the passivation mechanisms of In 3+ ions are essential for studying the production of higher PLQY and more stable PeLEDs.In this study, a near-unity quantum yield (QY) and superior stable red-emitting CsPbBr x I 3−x PeQDs were obtained by adopting nontoxic and slightly smaller radii of In 3+ ions. It was found that the surface defect can be passivated by In 3+ doping, Although all-inorganic CsPbBr x I 3−x perovskite quantum dots (PeQDs) are increasingly being used as a competitive material for pure red perovskite light-emitting diodes (PeLEDs), they suffer from low luminescent ability and poor stability. In this study, an In 3+ -doped CsPbBr x I 3−x PeQD solution exhibits a near-unity photoluminescence quantum yield (PLQY) of ≈99.8% and superior stability for more than half a year in atmosphere. As far as known, this is the highest PLQY and stability achieved for mixed halide PeQDs. In 3+ ion doping not only reduces the surface vacancy defects because of the partial substitution of Pb 2+ by the smaller ...

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Sn-doped CsPbBr3 QDs glasses with excellent stability and optical properties for WLED

Cited by 107 publications

References 42 publications

Long Persistent Luminescence from All‐Inorganic Perovskite Nanocrystals

Long Persistent Luminescence from All‐Inorganic Perovskite Nanocrystals

Recent advances in synthesis and application of perovskite quantum dot based composites for photonics, electronics and sensors

Near‐Unity Quantum Yield and Superior Stable Indium‐Doped CsPbBr_xI₃₋_x Perovskite Quantum Dots for Pure Red Light‐Emitting Diodes

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Sn-doped CsPbBr3 QDs glasses with excellent stability and optical properties for WLED

Cited by 107 publications

References 42 publications

Long Persistent Luminescence from All‐Inorganic Perovskite Nanocrystals

Long Persistent Luminescence from All‐Inorganic Perovskite Nanocrystals

Recent advances in synthesis and application of perovskite quantum dot based composites for photonics, electronics and sensors

Near‐Unity Quantum Yield and Superior Stable Indium‐Doped CsPbBrxI3−x Perovskite Quantum Dots for Pure Red Light‐Emitting Diodes

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Product

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Near‐Unity Quantum Yield and Superior Stable Indium‐Doped CsPbBr_xI₃₋_x Perovskite Quantum Dots for Pure Red Light‐Emitting Diodes