Sn doped ZnO thin film for formaldehyde detection

Ishak, Syafiqah; Johari, Shazlina; Ramli, Muhammad M.

doi:10.1063/1.5142119

Cited by 5 publications

(1 citation statement)

References 29 publications

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“…Sn is known as paramount n-type dopant for ZnO thin films [18]. It increases the porosity and surface area of ZnO films [19,20] giving Sndoped ZnO films excellent sensing characteristics [21][22][23][24]. Doping with SnO 2 improves optical properties [25][26][27][28][29], modifies ZnO band gap [30][31][32], enhances the transmittance from visible light to near-IR range [33][34][35][36], enhances electrical conductivity [37,38] and the transport properties through lower resistivity and higher donor concentration [39].…”

Section: Introductionmentioning

confidence: 99%

TEM and DFT study of basal-plane inversion boundaries in SnO2-doped ZnO

et al. 2021

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In our recent study (Ribic et al. 2020) we reported the structure of inversion boundaries (IBs) in Sb2O3-doped ZnO. Here, we focus on IBs that form in SnO2-doped ZnO. Using atomic resolution scanning transmission electron microscopy (STEM) methods we confirm that in SnO2-doped ZnO the IBs form in head-to-head configuration, where ZnO4 tetrahedra in both ZnO domains point towards the IB plane composed of a close-packed layer of octahedrally coordinated Sn and Zn atoms. The in-plane composition is driven by the local charge balance, following Pauling's principle of electroneutrality for ionic crystals, according to which the average oxidation state of cations is 3+. To satisfy this condition, the cation ratio in the IB-layer is Sn4+: Zn2+=1:1. This was confirmed by concentric electron probe analysis employing energy dispersive spectroscopy (EDS) showing that Sn atoms occupy 0.504 ? 0.039 of the IB layer, while the rest of the octahedral sites are occupied by Zn. IBs in SnO2-doped ZnO occur in the lowest energy, IB3 translation state with the cation sublattice expansion of ?IB(Zn-Zn) of +91 pm with corresponding O-sublattice contraction ?IB(O-O) of -46 pm. Based on quantitative HRTEM and HAADF-STEM analysis of in-plane ordering of Sn and Zn atoms, we identified two types of short-range distributions, (i) zigzag and (ii) stripe. Our density functional theory (DFT) calculations showed that the energy difference between the two arrangements is small (~6 meV) giving rise to their alternation within the octahedral IB layer. As a result, cation ordering intermittently changes its type and the direction to maximize intrinsic entropy of the IB layer driven by the in-plane electroneutrality and 6-fold symmetry restrictions. A long-range in-plane disorder, as shown by our work would enhance quantum well effect to phonon scattering, while Zn2+ located in the IB octahedral sites, would modify the bandgap, and enhance the in-plane conductivity and concentration of carriers. Keywords

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Section: Introductionmentioning

confidence: 99%

TEM and DFT study of basal-plane inversion boundaries in SnO2-doped ZnO

et al. 2021

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Effect of Cu2+ doping on the structural, optical, and vapor-sensing properties of ZnO thin films prepared by SILAR method

Devi¹,

Selvan²,

Prasad³

et al. 2020

J Mater Sci: Mater Electron

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ZnO/NiO heterostructure-based microsensors used in formaldehyde detection at room temperature: Influence of the sensor operating voltage

Chelu

Chesler

Anastasescu

et al. 2022

J Mater Sci: Mater Electron

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Recently the emissions of volatile organic compounds (VOCs) in the atmosphere have increased dramatically with rapid development of urbanization and industry. This led to a large decline in air quality around the world, which resulted in a heavy impact on human health. Therefore, new/cheap detection devices for VOCs are of high interest. Formaldehyde (FA) is a very toxic VOC, which damages the respiratory system even in the smallest doses and short exposure time. Zinc oxide (ZnO)/nickel oxide (NiO) heterostructures were synthesized using an economical route: firstly, NiO was prepared by liquid exfoliation technique and deposited by dip-coating on alumina ceramic transducers with two interdigital gold (Au) electrodes, followed by low—temperature hydrothermal growth of ZnO. The as-prepared sensors were characterized by atomic force microscopy (AFM), scanning electron microscopy (SEM-EDAX), and X-Ray fluorescence (XRF). The response/recovery of ZnO/NiO heterostructure-based microsensors for formaldehyde was investigated at room temperature, in agreement with modern sensing requirements. The sensor operating voltage was varied between 1.5 and 5.0 V direct current (DC), to achieve the best sensor performance.

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Sn doped ZnO thin film for formaldehyde detection

Cited by 5 publications

References 29 publications

TEM and DFT study of basal-plane inversion boundaries in SnO2-doped ZnO

TEM and DFT study of basal-plane inversion boundaries in SnO2-doped ZnO

Effect of Cu2+ doping on the structural, optical, and vapor-sensing properties of ZnO thin films prepared by SILAR method

ZnO/NiO heterostructure-based microsensors used in formaldehyde detection at room temperature: Influence of the sensor operating voltage

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