Sn-inserted Al-induced layer exchange for large-grained GeSn thin films on insulator

Toko, Kaoru; N, Oya; Nakata, Masaya; Suemasu, Takashi

doi:10.1016/j.tsf.2016.08.046

Cited by 2 publications

(3 citation statements)

References 38 publications

(46 reference statements)

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“…These metals are also useful for the LE of amorphous SiGe alloy [ [61][62][63][64][65], where the growth conditions should be optimized according to the SiGe composition [40,66]. Crystalline semiconductor alloys such as SiGe and GeSn can be also formed by inducing the reaction between each single element [67][68][69]. Sb also induces LE with Si and Ge, but has a problem in thin film stability.…”

Section: Materials Combinationsmentioning

confidence: 99%

“…This feature is also effective for forming a semiconductor alloy. In the Ge-Al system, Sn preparation in the initial LE structure results in the crystalline GeSn alloy, though the Sn concentration is equivalent to the solid solubility limit (∼2%) [69]. This behavior is considered to more likely occur as the LE is closer to the equilibrium state.…”

Section: High Impurity Doping Mic Generally Has a Problem With Metal ...mentioning

confidence: 99%

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Metal-induced layer exchange of group IV materials

Toko

Suemasu

2020

J. Phys. D: Appl. Phys.

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108

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Layer exchange (LE) is an interesting phenomenon in which metal and semiconductor layers exchange during heat treatment. A great deal of effort has been put into research on the mechanism and applications of LE, which has allowed various group IV materials (Si, SiGe, Ge, GeSn and C) to form on arbitrary substrates using appropriate metal catalysts. Depending on the LE material combination and growth conditions, the resulting semiconductor layer exhibits various features: low-temperature crystallization (80 °C–500 °C), grain size control (nm to mm orders), crystal orientation control to (100) or (111) and high impurity doping (>1020 cm−3). These features are useful for improving the performance, productivity and versatility of various devices, such as solar cells, transistors, thermoelectric generators and rechargeable batteries. We briefly review the findings and achievements from over 20 years of LE studies, including recent progress on device applications.

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Section: Materials Combinationsmentioning

confidence: 99%

Section: High Impurity Doping Mic Generally Has a Problem With Metal ...mentioning

confidence: 99%

Metal-induced layer exchange of group IV materials

Toko

Suemasu

2020

J. Phys. D: Appl. Phys.

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108

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“…[79,96,98,104] semiconductor layer, as reported in the GeSn example. [114] When pure Al, which acts as an acceptor for both Si and Ge, is used for the LE, the hole concentration increases with increasing x reflecting the solid solubility of Al in SiGe (Figure 6b). [79,107] Adding B to Al further improves the hole concentration by doping SiGe with B in addition to Al over the entire x range (Figure 6b).…”

Section: Electrical and Thermoelectric Propertiesmentioning

confidence: 99%

Layer Exchange Synthesis of SiGe for Flexible Thermoelectric Generators: A Comprehensive Review

Toko,

Maeda,

Ishiyama

et al. 2024

Adv Elect Materials

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Flexible thermoelectric generators are leading candidates for next‐generation energy‐harvesting devices. Although SiGe, an environmentally‐friendly semiconductor, is the most reliable and widely tested thermoelectric material, it is difficult to form a SiGe layer with high thermoelectric performance at temperatures lower than the heat‐proof temperature of flexible plastic films. In this article, the synthesis of SiGe thermoelectric thin films via the metal‐induced layer exchange phenomenon is reviewed, from its mechanism to device performance. The selection of metal species allows low‐temperature formation (≤500 °C) of p‐ and n‐type SiGe on insulating substrates. Currently, the maximum power factors near room temperature are 850 µW m−1 K−2 for p‐type Si0.4Ge0.6 and 1000 µW m−1 K−2 for n‐type Si0.85Ge0.15. These values are the highest among those of Group IV semiconductor thin films formed at low temperatures. The flexible thermoelectric generator consisting of these p‐ and n‐type SiGe exhibits cross‐sectional and planar power densities of ≈3.0 mW cm−2 and 0.50 µW cm−2, respectively, at a temperature difference of 30 K. Finally, the future challenges of layer exchange for improving the performance of flexible thermoelectric generators based on Group IV semiconductors are discussed.

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Sn-inserted Al-induced layer exchange for large-grained GeSn thin films on insulator

Cited by 2 publications

References 38 publications

Metal-induced layer exchange of group IV materials

Metal-induced layer exchange of group IV materials

Layer Exchange Synthesis of SiGe for Flexible Thermoelectric Generators: A Comprehensive Review

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