2014
DOI: 10.1016/j.ijhydene.2014.02.165
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Sn self-doped α-Fe2O3 nanobranch arrays supported on a transparent, conductive SnO2 trunk to improve photoelectrochemical water oxidation

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Cited by 35 publications
(32 citation statements)
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“…The intermediate metal catalysts are usually utilized to prepare homo/heterostructured branching arrays [160][161][162]. For example, a combination of the reductive successive-ionic-layer-adsorptionreaction (SILAR) and the SLS growth approach were implemented to assemble a 1D oxide-1D chalcogenide heterostructured photoactive film.…”
Section: Preparation Of Homo/heterogeneous Branching Structuresmentioning
confidence: 99%
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“…The intermediate metal catalysts are usually utilized to prepare homo/heterostructured branching arrays [160][161][162]. For example, a combination of the reductive successive-ionic-layer-adsorptionreaction (SILAR) and the SLS growth approach were implemented to assemble a 1D oxide-1D chalcogenide heterostructured photoactive film.…”
Section: Preparation Of Homo/heterogeneous Branching Structuresmentioning
confidence: 99%
“…The FeOOH can be transformed into a-Fe 2 O 3 by heat treatment. Inspired from the idea, Sn-doped a-Fe 2 O 3 nanorod branches supported on SnO 2 nanowire arrays were prepared with enhanced PEC performance [162]. The average length of the nanorods is estimated to be about 70, 130, and 160 nm for 2, 4, and 12 h, respectively.…”
Section: Preparation Of Homo/heterogeneous Branching Structuresmentioning
confidence: 99%
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“…These include a low absorption near the band gap, very short excited state lifetimes (≈10 ps) and poor charge carrier mobility, that result in a small hole diffusion length (2–4 nm) and in a detrimental performance decrease, due to charge carrier recombination . Several works, that have been focused on overcoming these limitations and improve hematite photoactivity, encompass doping with a variety of elements , use of over/underlayers and a detailed control of morphology through a proper nanostructure engineering .…”
Section: Introductionmentioning
confidence: 99%
“…Two potentials were chosen: -0.30 V (close to the photo-onset potential) and 0.23 V (O 2 /OHequilibrium potential). The charge transfer resistance at the semiconductor/electrolyte interface is associated to the radius of the semicircle in the frequency range 1-100Hz[52]. As shown inFig.…”
mentioning
confidence: 99%