Sn-Te-Se Phase Change Recording Film For Optical Disks

Solution-Based Processing of the Phase-Change Material KSb5S8

“…Numerous prospective Se- and Te-based PCMs have been examined for use in memory applications as well as for more fundamental studies including: In−Se, , In−Se−Tl, Ga−Te−Se, Sb−Se, Sb−Se−Bi, Sb−Te, In−Sb−Te, Ag−In−Sb−Te, Sn−Te−Se, Ge−Te, Ge−Te−Sn, Ge−Te−As, , Ge−Sb−Te, , and Ge−Sb−Te−Se . Most of these systems (with the notable exception of Ge−Te, Ge−Sb−Te and Ag−In−Sb−Te) exhibit relatively long crystallization times (>200 ns), rendering them incompatible with high data-transfer-rate operation in rewritable electronic and optical applications .…”

Investigation of the Effect of Film Thickness and Heat Treatment on the Optical Properties of TeSeSn Thin Films

“…Selenium glasses exhibit a transmission range from 8 to 12 µm, but tellurium glasses offer the widest infrared transmission [5]. TeSeSn thin films have generated great interest because they are reported as reversible optical recording media [6]- [8]. The recording is carried out by making use of changes in the optical properties associated with improve of crystalline phase of these films resulting from annealing temperature.…”

“…The recording is carried out by making use of changes in the optical properties associated with improve of crystalline phase of these films resulting from annealing temperature. TeSeSn thin films have been prepared by various techniques such as thermal evaporation under vacuum [6], radio frequency sputtering [8] and pulsed laser evaporation [9]. Among the various techniques, the vacuum thermal evaporation is very common due to its simplicity, low cost reproducibility and scalability deposit onto large area substrates.…”