Abstract:An analysis model of snapback voltage for the base resistance controlled thyristor (BRT) is developed in this paper. It's shown that, improving hole current flowing into P-base region is an important way to suppress snapback phenomenon during forward conducting state. Thus, a new BRT with a floating N-region in N-drift layer is proposed. In this new structure, the floating N-region introduces a hole potential barrier in parasitic PNP to prevent holes from being swept into cathode. Then, almost all of hole curr… Show more
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