SnO<sub>2</sub>–ZnO nanocomposite thin films: The influence of structure, composition and crystallinity on optical and electrophysical properties

Bayan, Е. М.; Petrov, Victor; Volkova, Maria G.; Storozhenko, V. Yu; Чернышев, А. В.

doi:10.1142/s2010135x21600080

Cited by 13 publications

(14 citation statements)

References 34 publications

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“…Gas sensors based on thin-film semiconductor oxide materials are widely used due to their high sensitivity to toxic gases [1][2][3]. Metal oxides, such as tin dioxide [4], zinc oxide [5], titanium dioxide [6], cobalt oxide [7], iron oxide [8], indium oxide and others [9] are used as gas-sensitive sensor materials for monitoring the concentration of pollutants (NO x , CO [10]) or process gases (H 2 S, H 2 , C 3 H 8 , C 2 H 5 OH, CH 3 COCH 3 , etc. [11]).…”

Section: Introductionmentioning

confidence: 99%

High Gas Sensitivity to Nitrogen Dioxide of Nanocomposite ZnO-SnO2 Films Activated by a Surface Electric Field

et al. 2022

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Gas sensors based on the multi-sensor platform MSP 632, with thin nanocomposite films based on tin dioxide with a low content of zinc oxide (0.5–5 mol.%), were synthesized using a solid-phase low-temperature pyrolysis technique. The resulting gas-sensitive ZnO-SnO2 films were comprehensively studied by atomic force microscopy, Kelvin probe force microscopy, X-ray diffraction, scanning electron microscopy, transmission electron microscopy, scanning transmission electron microscopy, energy dispersive X-ray spectrometry, and X-ray photoelectron spectroscopy. The obtained films are up to 200 nm thick and consist of ZnO-SnO2 nanocomposites, with ZnO and SnO2 crystallite sizes of 4–30 nm. Measurements of ZnO-SnO2 films containing 0.5 mol.% ZnO showed the existence of large values of surface potential, up to 1800 mV, leading to the formation of a strong surface electric field with a strength of up to 2 × 107 V/cm. The presence of a strong surface electric field leads to the best gas-sensitive properties: the sensor’s responsivity is between two and nine times higher than that of sensors based on ZnO-SnO2 films of other compositions. A study of characteristics sensitive to NO2 (0.1–50 ppm) showed that gas sensors based on the ZnO-SnO2 film demonstrated a high sensitivity to NO2 with a concentration of 0.1 ppm at an operating temperature of 200 °C.

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Section: Introductionmentioning

confidence: 99%

High Gas Sensitivity to Nitrogen Dioxide of Nanocomposite ZnO-SnO2 Films Activated by a Surface Electric Field

et al. 2022

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“…In addition, the kinetics of the film photoresponse with an increase in the concentration of aluminum in ZnO begins to change, which indicates the emergence of another mechanisms of generation–recombination of charge carriers in ZnO films with the addition of Al. The latter may be due to the occurrence of a strong surface electric field at the interface [ 35 , 37 , 38 , 54 ]. Doping zinc oxide with aluminum leads to a decrease in the work function of the electron from doped Al-ZnO nanocrystals.…”

Section: Resultsmentioning

confidence: 99%

“…One of the simple, inexpensive and promising films synthesis methods is solid-phase pyrolysis, which allows the obtention of films of various compositions: ZnO-SnO 2 [ 35 , 36 , 37 ], Co 3 O 4 -ZnO [ 38 ]. By this method, using heat treatment at 600 °C, transparent ZnO films containing 1 and 3% Al 3+ were obtained [ 39 ]; they had a transmittance of more than 90%.…”

Section: Introductionmentioning

confidence: 99%

Polycrystalline Transparent Al-Doped ZnO Thin Films for Photosensitivity and Optoelectronic Applications

et al. 2023

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Thin nanocrystalline transparent Al-doped ZnO (1–10 at.% Al) films were synthesized by solid-phase pyrolysis at 700 °C. Synthesized Al-doped ZnO films were investigated by X-ray diffraction (XRD), scanning and transmission electron microscopy (SEM, TEM). All obtained materials were crystallized into the wurtzite structure, which was confirmed by XRD. The material crystallinity decreases with the introduction of aluminum. SEM and TEM showed that the films are continuous and have a uniform distribution of nanoparticles with an average size of 15–20 nm. TEM confirmed the production of Al-doped ZnO films. The transmittance of Al-doped ZnO films in the range of 400–1000 nm is more than 94%. The introduction of 1% Al into ZnO leads to a narrowing of the band gap compared to ZnO to a minimum value of 3.26 eV and a sharp decrease in the response time to the radiation exposure with a wavelength of 400 nm. An increase in aluminum concentration leads to a slight increase in the band gap, which is associated with the Burstein–Moss effect. The minimum response time (8 s) was shown for film containing 10% Al, which is explained by the shortest average lifetime of charge carriers (4 s).

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“…As shown in our previous studies, transparent, homogeneous, nanocrystalline films based on zinc oxide [ 20 ], as well as ZnO-SnO 2 composite films [ 21 , 22 ], could be reliably obtained by solid-phase pyrolysis. In the framework of this method, we fabricated here the composite Co 3 O 4 -ZnO films whose properties are sufficiently tuned by the composition to be different from those of pure Co 3 O 4 and ZnO ones.…”

Section: Introductionmentioning

confidence: 84%

Nanocomposite Co3O4-ZnO Thin Films for Photoconductivity Sensors

Petrov

Sysoev

Ignatieva

et al. 2023

Sensors

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Thin nanocomposite films based on zinc oxide (ZnO) added with cobalt oxide (Co3O4) were synthesized by solid-phase pyrolysis. According to XRD, the films consist of a ZnO wurtzite phase and a cubic structure of Co3O4 spinel. The crystallite sizes in the films increased from 18 nm to 24 nm with growing annealing temperature and Co3O4 concentration. Optical and X-ray photoelectron spectroscopy data revealed that enhancing the Co3O4 concentration leads to a change in the optical absorption spectrum and the appearance of allowed transitions in the material. Electrophysical measurements showed that Co3O4-ZnO films have a resistivity up to 3 × 104 Ohm∙cm and a semiconductor conductivity close to intrinsic. With advancing the Co3O4 concentration, the mobility of the charge carriers was found to increase by almost four times. The photosensors based on the 10Co-90Zn film exhibited a maximum normalized photoresponse when exposed to radiation with wavelengths of 400 nm and 660 nm. It was found that the same film has a minimum response time of ca. 26.2 ms upon exposure to radiation of 660 nm wavelength. The photosensors based on the 3Co-97Zn film have a minimum response time of ca. 58.3 ms versus the radiation of 400 nm wavelength. Thus, the Co3O4 content was found to be an effective impurity to tune the photosensitivity of radiation sensors based on Co3O4-ZnO films in the wavelength range of 400–660 nm.

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SnO₂–ZnO nanocomposite thin films: The influence of structure, composition and crystallinity on optical and electrophysical properties

Cited by 13 publications

References 34 publications

High Gas Sensitivity to Nitrogen Dioxide of Nanocomposite ZnO-SnO2 Films Activated by a Surface Electric Field

High Gas Sensitivity to Nitrogen Dioxide of Nanocomposite ZnO-SnO2 Films Activated by a Surface Electric Field

Polycrystalline Transparent Al-Doped ZnO Thin Films for Photosensitivity and Optoelectronic Applications

Nanocomposite Co3O4-ZnO Thin Films for Photoconductivity Sensors

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SnO2–ZnO nanocomposite thin films: The influence of structure, composition and crystallinity on optical and electrophysical properties

Cited by 13 publications

References 34 publications

High Gas Sensitivity to Nitrogen Dioxide of Nanocomposite ZnO-SnO2 Films Activated by a Surface Electric Field

High Gas Sensitivity to Nitrogen Dioxide of Nanocomposite ZnO-SnO2 Films Activated by a Surface Electric Field

Polycrystalline Transparent Al-Doped ZnO Thin Films for Photosensitivity and Optoelectronic Applications

Nanocomposite Co3O4-ZnO Thin Films for Photoconductivity Sensors

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SnO₂–ZnO nanocomposite thin films: The influence of structure, composition and crystallinity on optical and electrophysical properties