SNOM-induced photoluminescence of individual InGaAs quantum dots using etched metal-coated fibre tips

Manke, Ingo; Lorbacher, J.; Spithoven, J. L.; Heinrichsdorff, F.; Dähne‐Prietsch, M.

doi:10.1002/(sici)1096-9918(199905/06)27:5/6<491::aid-sia540>3.0.co;2-9

Cited by 6 publications

(8 citation statements)

References 8 publications

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“…11,18 More surprisingly, also the exciton diffusion length of 200-400 nm found in NSOM measurements on QD layers is of the same magnitude. 4,5 In conclusion, we have studied the spatially resolved electroluminescence of self-assembled InGaAs/GaAs dots using low-temperature STL. Our results indicate that the spatial resolution is limited by the diffusion length of the electrons injected from the tip of the STM.…”

contrasting

confidence: 92%

“…Earlier spatially resolved measurements with optical nearfield techniques on quantum dots have shown that exciton diffusion lengths are in the order of 200-400 nm. 4,5 Electron and hole diffusion lengths in such structures are unknown. Besides all-optical techniques like microphotoluminescence and near-field scanning optical microscopy ͑NSOM͒, also the scanning-tunneling microscope ͑STM͒ can be used to locally excite individual dots for optical analysis.…”

mentioning

confidence: 99%

“…It follows from the earlier discussion that only six or seven dots in a region that contains some 140 dots are optically active under local electrical excitation. This low fraction of optically active dots contrasts with NSOM results, 4,5 in which every dot is found to luminesce. Although we have no full explanation for the surprisingly low fraction of active dots, the discrepancy with NSOM can, at least partially, be explained by realizing that in NSOM excitons are created, which are neutral, whereas in STL electrically charged electrons are injected.…”

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confidence: 99%

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Spatially resolved scanning tunneling luminescence on self-assembled InGaAs/GaAs quantum dots

Jacobs

Kemerink

Koenraad

et al. 2003

Applied Physics Letters

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Scanning-tunneling microscope induced luminescence at low temperature has been used to study the carrier injection into single self-assembled InGaAs/GaAs quantum dots. Electrons are injected from the tip into the dots, which are located in the intrinsic region of a p-i-n junction, and contain excess holes under typical operational conditions. Only a fraction (∼4%) of the dots is found to be optically active under local electrical excitation. Spatial dependent measurements indicate a highly nonhomogeneous electron diffusion towards the dots. By analyzing the spatial dependence of individual peaks in the measured spectra, the contributions of individual dots to the total, multidot spectrum can be disentangled.

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confidence: 92%

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confidence: 99%

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confidence: 99%

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Spatially resolved scanning tunneling luminescence on self-assembled InGaAs/GaAs quantum dots

Jacobs

Kemerink

Koenraad

et al. 2003

Applied Physics Letters

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“…13 In this way, the spectra of single quantum dots were found to consist of Lorentzian-shaped transition lines with finite linewidths exceeding 10 meV at room temperature, decreasing to below the spectral resolution of 1 meV at 4 K. This astonishing observation is in contrast both to the theoretical prediction of extremely narrow lines 1-3 and to experimental results on other quantum-dot samples. Etched and subsequently metal-coated fiber tips allowed to study the PL of individual quantum dots without the disturbing background signal from neighboring dots.…”

Section: Introductionmentioning

confidence: 67%

“…13 Etching was performed in 48% hydrofluoric acid covered with a layer of baby oil. 13 Etching was performed in 48% hydrofluoric acid covered with a layer of baby oil.…”

Section: B Tip Preparationmentioning

confidence: 99%

Finite linewidth observed in photoluminescence spectra of individual In0.4Ga0.6As quantum dots

Spithoven

Lorbacher

Manke

et al. 1999

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Temperature dependence of the photoluminescence properties of self-assembled In Ga As ∕ Ga As single quantum dot High-resolution near-field spectroscopy of InAs single quantum dots at 70 K Appl. Phys. Lett. 83, 3024 (2003); 10.1063/1.1618949Carrier-carrier interaction in single In 0.5 Ga 0.5 As quantum dots at room temperature investigated by near-field scanning optical microscope Appl. Phys. Lett. 83, 2250 (2003); 10.1063/1.1609662Room-temperature photoluminescence spectroscopy of self-assembled In 0.5 Ga 0.5 As single quantum dots by using highly sensitive near-field scanning optical microscopeThe photoluminescence of In 0.4 Ga 0.6 As quantum dots was investigated by scanning-near-field optical microscopy at temperatures between 300 and 4 K. Using etched, metal-coated fiber tips, the pure signal of individual quantum dots could be detected. The spectra are found to consist of Lorentzian-shaped emission lines with linewidths ranging from 10 to 20 meV at room temperature, reducing to less than the spectrometer resolution of 1 meV at 4 K. This behavior is in contrast to the expectation of extremely small linewidths amounting to a few eV, and can be related to lifetime effects mediated by thermal excitation of the carriers in the dots. Furthermore, the spectra show a redshift by about 8 meV upon increasing the excitation intensity, indicating biexcitonic effects.

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Formation of misfit dislocations in GaAs/InGaAs multiquantum wells observed by photoluminescence microscopy

Ohizumi

Tsuruoka

Ushioda

2002

Journal of Applied Physics

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SNOM-induced photoluminescence of individual InGaAs quantum dots using etched metal-coated fibre tips

Cited by 6 publications

References 8 publications

Spatially resolved scanning tunneling luminescence on self-assembled InGaAs/GaAs quantum dots

Spatially resolved scanning tunneling luminescence on self-assembled InGaAs/GaAs quantum dots

Finite linewidth observed in photoluminescence spectra of individual In0.4Ga0.6As quantum dots

Formation of misfit dislocations in GaAs/InGaAs multiquantum wells observed by photoluminescence microscopy

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