SNR200 chemically amplified resist optimization

Rocque, Janet M.; Puisto, Denise M.; Resnick, Douglas J.; Cummings, K. D.; Chu, William; Seese, P. A.

doi:10.1117/12.275799

Cited by 2 publications

(1 citation statement)

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“…Most engineers face the same question when testing, running-in, and fine-tuning electron beam (e-beam) lithography processes: How do we optimize photoresist processing and exposure conditions to obtain acceptable or, ideally, the best possible results? This is evidenced by the number of published studies that address the optimization of bake, 1 – 3 exposure, 4 – 6 and development 7 – 9 conditions for different resists. In these cases, a single parameter or a set of parameters is tuned to improve the quality of the lithographic process and the resulting photoresist features using proven techniques from optical lithography, such as Bossung plots, 10 contrast curves, 11 and photoresist development models 12 .…”

Section: Introductionmentioning

confidence: 99%

Universal approach for process optimization of chemically amplified photoresists in electron beam lithography

Greul,

Shoshi,

Klikovits

et al. 2024

J. Micro/Nanopattern. Mats. Metro.

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A critical factor in the fabrication of complex nano-and microstructures with high quality and reproducibility is the determination of a suitable working point. This applies particularly to lithography, which is the basis for transferring the desired patterns onto the substrate. For this reason, we present a generic process optimization methodology that has been successfully applied to four chemically amplified positive and negative tone electron beam lithography photoresists with different sensitivities. The method is iterative and designed for the best possible results with a minimum use of resources. This is accomplished by identifying the critical key factors in photoresist processing using contrast curves and determining their impact. Starting with the most influential bake parameter, the maximum effect is achieved. The method used is similar to the Bossung plot procedure and aims for a maximum process window. After the bake parameters, the fundamentals of development kinetics are discussed, and a method for determining an appropriate development time is presented. A mask making approach is then used to investigate the ideal exposure conditions. This includes the determination of an appropriate base dose in conjunction with proximity effect correction and sizing. The evaluation of this method is demonstrated by critical dimension linearity plots and scanning electron microscope cross sectional analysis of resist profiles. The results presented demonstrate the universality of the optimization approach.

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Section: Introductionmentioning

confidence: 99%

Universal approach for process optimization of chemically amplified photoresists in electron beam lithography

Greul,

Shoshi,

Klikovits

et al. 2024

J. Micro/Nanopattern. Mats. Metro.

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Uniform low stress oxynitride films for application as hardmasks on x-ray masks

Dauksher

1997

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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A low stress silicon oxynitride deposition process has been developed in which the average stress level can be tailored by adjusting silane flow in the plasma enhanced chemical vapor deposition reactor. Stress gradients, as might be caused by nonuniform heating or gas distribution, were not found to exist. By volume, the SiON films were found to be approximately 81% silicon dioxide and 19% silicon nitride. Because the films are easily removed in hydrofluoric acid, this composition is ideally suited for use as a hardmask patterning layer on x-ray masks. A reactive ion etch process employing CHF3, O2, and Ar gases has demonstrated selectivity to Shipley SNR 200 resist of better than 3:1. Smooth pattern transfer into TaSi and TaSiN absorber layers of test features as small as 0.1 μm has been achieved using SiON as the hardmask layer. Image placement distortions on the order of 15 nm (3σ) occur from etching the SiON films on 64 Mbit SRAM x-ray test masks.

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SNR200 chemically amplified resist optimization

Cited by 2 publications

References 0 publications

Universal approach for process optimization of chemically amplified photoresists in electron beam lithography

Universal approach for process optimization of chemically amplified photoresists in electron beam lithography

Uniform low stress oxynitride films for application as hardmasks on x-ray masks

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