SnS by Ionized Jet Deposition for photovoltaic applications

Menossi, Daniele; Mare, Simone Di; Rimmaudo, I.; Artegiani, Elisa; Tedeschi, G.; Peña, J. L.; Piccinelli, Fabio; Salavei, Andrei

doi:10.1109/pvsc.2017.8366041

Cited by 5 publications

(4 citation statements)

References 6 publications

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“…Due to material ablation instead of sputtering, almost any material can be deposited with very efficient material/target use. The IJD method has been successfully used to grow thin films from a wide range of complex materials on various substrates, such as hard metal carbides and nitrides on silicon, aluminium alloy and stainless steel substrates 32 , yttria-stabilized zirconia on SiO 2 , borosilicate, titanium and poly(ether ether ketone) 33 , tin sulfide layers on sodalime glass 34 , soft polymers on stainless steel and glass substrates 35 , and bone apatite-like films on silicon 36,37 . Hence, the IJD technique represents a versatile, very safe, and low-temperature process, which can be explored for TMDC growth, e.g., to obtain stoichiometric and crystalline 2H-MoS 2 without the use of hazardous gases such as hydrogen and sulfur, and carbon compounds, or other molecules (often used as catalysators in the synthesis).…”

Section: Introductionmentioning

confidence: 99%

2D-MoS2 goes 3D: transferring optoelectronic properties of 2D MoS2 to a large-area thin film

et al. 2021

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The ongoing miniaturization of electronic devices has boosted the development of new post-silicon two-dimensional (2D) semiconductors, such as transition metal dichalcogenides, one of the most prominent materials being molybdenum disulfide (MoS2). A major obstacle for the industrial production of MoS2-based devices lies in the growth techniques. These must ensure the reliable fabrication of MoS2 with tailored 2D properties to allow for the typical direct bandgap of 1.9 eV, while maintaining large-area growth and device compatibility. In this work, we used a versatile and industrially scalable MoS2 growth method based on ionized jet deposition and annealing at 250 °C, through which a 3D stable and scalable material exhibiting excellent electronic and optical properties of 2D MoS2 is synthesized. The thickness-related limit, i.e., the desired optical and electronic properties being limited to 2D single/few-layered MoS2, was overcome in the thin film through the formation of encapsulated highly crystalline 2D MoS2 nanosheets exhibiting a bandgap of 1.9 eV and sharp optical emission. The newly synthesized 2D-in-3D MoS2 structure will facilitate device compatibility of 2D materials and confer superior optoelectronic device function.

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Section: Introductionmentioning

confidence: 99%

2D-MoS2 goes 3D: transferring optoelectronic properties of 2D MoS2 to a large-area thin film

et al. 2021

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“…12 The selenizations were done in the same fashion as by Larsen et al 13 In order to achieve different anion ratios in the samples, the selenization temperature and duration were set for S1(S1 0 ), S2(S2 0 ), and S3(S3 0 ) in Table I as 530 C 10 min, 560 C 4 min, and 500 C, 10 min, respectively. The pure sulfide sample referred to as S4 in Table I was taken from our pervious work.…”

mentioning

confidence: 99%

Optical properties of Cu2ZnSn(SxSe1-x)4 solar absorbers: Spectroscopic ellipsometry and ab initio calculations

Zamulko

Persson

et al. 2017

Applied Physics Letters

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Dielectric functions of Cu2ZnSn(SxSe1-x)4 thin film absorbers with varied x were determined by spectroscopic ellipsometry and ab initio calculations. From the combination of experimental and theoretical studies, the fundamental interband transition energy E0 (∼1–1.5 eV) and the next following transition energy E1 (∼2–3 eV) were identified and found to blue-shift with increasing sulfur anion content, while keeping the energy separation E1−E0 almost constant, ∼1.4 eV from experiments, and 1 eV from theory. In addition, the average dielectric responses were found to decrease with sulfur anion content from both theoretical and experimental results. The Tauc optical bandgap value Eg determined on samples prepared on Mo and soda lime glass substrate showed a positive linear relationship between x and bandgap Eg. The bandgap bowing factor determined from the theoretical data is 0.09 eV.

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“…While IBC Si cells are commercially available, back‐contact configurations in emerging, efficient PV such as III–V, CdTe, CIGS, and perovskite devices have been relatively less explored. [ 8–19 ] The key difference between silicon and such emerging technologies is the nature of the absorber layer. For silicon, which has an indirect bandgap, the minority carrier‐diffusion length ( L d ) is on the order of 100–1000 µm.…”

Section: Introductionmentioning

confidence: 99%

Spectroscopic Analysis for the Identification of Loss Mechanisms in Back‐Contact Perovskite Solar Cells

Sun

Gillespie

Rigter

et al. 2023

Adv Materials Technologies

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Back‐contact perovskite solar cells offer a significant potential to reach high efficiency due to reduced parasitic absorption from the top surface. However, the currently reported efficiencies are considerably lower (<10%) than planar perovskite solar cells (>20%). Herein, back‐contact perovskite solar cells are fabricated to study loss mechanisms that cause low device efficiency. This work spatially resolves the short‐circuit current, open‐circuit voltage, photoluminescence quantum yield, carrier lifetime, and external quantum efficiency of the devices. The results indicate that the front surface recombination, increased nonradiative recombination at hole contact layer/perovskite interface, and the extraction barriers are three main mechanisms limiting devices from achieving high efficiencies.

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SnS by Ionized Jet Deposition for photovoltaic applications

Cited by 5 publications

References 6 publications

2D-MoS2 goes 3D: transferring optoelectronic properties of 2D MoS2 to a large-area thin film

2D-MoS2 goes 3D: transferring optoelectronic properties of 2D MoS2 to a large-area thin film

Optical properties of Cu2ZnSn(SxSe1-x)4 solar absorbers: Spectroscopic ellipsometry and ab initio calculations

Spectroscopic Analysis for the Identification of Loss Mechanisms in Back‐Contact Perovskite Solar Cells

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