The fabrication of defect rich S-scheme binary heterojunction
system
with enhanced space charge separation and mobilization is a pioneering
approach for improving photoreduction efficiency towards the production
of value added chemicals. Herein, we have rationally fabricated an
atomic sulfur defect-rich hierarchical UiO-66(−NH2)/CuInS2 n-p heterojunction system by uniform dispersion
of UiO-66(−NH2) (UN66) nanoparticles over the surface
of hierarchical CuInS2 nanosheets under mild conditions.
The designed heterostructures are characterized by using different
structural, microscopic, and spectroscopic techniques. The hierarchical
CuInS2 (CIS) component shows surface sulfur defects leading
to creation of more surface exposed active sites with improved absorption
of visible light and augmented diffusion of charge carriers. The photocatalytic
performance of prepared UiO-66(−NH2)/CuInS2 heterojunction materials is explored for N2 fixation
and O2 reduction reactions (ORR). The optimal UN66/CIS20
heterostructure photocatalyst exhibited outstanding N2 fixation
and O2 reduction performances with yields of 398 and 4073
μmol g–1 h–1 under visible
light illumination, respectively. An S-scheme charge migration pathway
coupled with improved radical generation ability accounted for the
superior N2 fixation and H2O2 production
activity. This research work furnishes a new perspective on the synergistic
effect of atomic vacancy and an S-scheme heterojunction system toward
enhanced photocatalytic NH3 and H2O2 production using a vacancy-rich hierarchical heterojunction photocatalyst.