SnS<sub>2</sub>/MoS<sub>2</sub> van der Waals Heterostructure Photodetector with Ultrahigh Responsivity Realized by a Photogating Effect

Quan, Sufeng; Li, Luyang; Guo, Shuai; Zhao, Xiaoyu; Weller, Dieter; Wang, Xuefeng; Fu, Shiyou; Liu, Ruibin; Hao, Yufeng

doi:10.1021/acsami.3c13004

Cited by 6 publications

(2 citation statements)

References 50 publications

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“…The photoresponse performance of the 1D vdW Nb 2 Pd 1– x Se 5 photodetectors is further evaluated by several vital parameters, , including responsivity ( R ), detectivity ( D *), external quantum efficiency (EQE), and rising/decay time, which have been presented in detail in Note S1 in the Supporting Information. Figure (e) presents the calculated R and D * under a 638 nm laser with different power densities at a gate voltage of 40 V. A maximum R of ∼1 A/W is achieved at a gate voltage of 40 V because the photogating-effect-dominated photocurrent generation mechanism could extend the lifetime of photoexcited carriers . According to the measured noise power spectral density of the Nd 2 Pd 1– x Se 5 photodetector in Figure S7, the Nb 2 Pd 1– x Se 5 photodetector exhibits decreased R ( D *) from 1 A/W (4.23 × 10 8 Jones) to 0.2 A/W (8.95 × 10 7 Jones) when the power density increases from 0.45 μW/μm 2 to 6.93 μW/μm 2 , which is probably attributed to the decreased recombination of the photoexcited carriers under weak laser illumination. , As shown in Figure S8 in the Supporting Information, the maximum EQE of the Nb 2 Pd 1– x Se 5 photodetector reaches 196%, indicating the device has good photoelectric conversion efficiency .…”

Section: Resultsmentioning

confidence: 97%

Symmetry-Reduction Enhanced Polarization-Sensitive Photoresponse Based on One-Dimensional van der Waals Materials

Gan,

Liu,

Liu

et al. 2024

ACS Appl. Mater. Interfaces

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Designing high-performance polarization-sensitive photodetectors is essential for photonic device applications. Anisotropic one-dimensional (1D) van der Waals (vdW) materials have provided a promising platform to that end. Despite significant advances in 1D vdW photonic devices, their performance is still far from delivering practical potential. Herein, we propose the design of high-performance polarization-sensitive photodetectors using unique 1D vdW materials. By leveraging the chemical vapor transport technique, we successfully fabricate high-quality 1D vdW Nb 2 Pd 1−x Se 5 (x = 0.29) nanowires. The 1D vdW Nb 2 Pd 1−x Se 5 photodetector exhibits a high mobility of ∼56 cm 2 /(V s) and superior photoresponse performance, including a high responsivity of 1A/W and an ultrafast response time of ∼8 μs under 638 nm illumination. Moreover, the 1D vdW Nb 2 Pd 1−x Se 5 photodetector demonstrates excellent polarization-sensitive photoresponse with a degree of linear polarization (DOLP) up to 0.85 and can be modulated by adjusting the gate voltage, laser power density, and wavelength. Those exceptional performance are believed to be relevant to the symmetry-reduction induced by the partial occupation of Pd sites. This study offers feasible approaches to enhance the anisotropy of 1D vdW materials and the modulation of their polarization-sensitive photoresponse, which may provide deep insights into the physical origin of anisotropic properties of 1D vdW materials.

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Section: Resultsmentioning

confidence: 97%

Symmetry-Reduction Enhanced Polarization-Sensitive Photoresponse Based on One-Dimensional van der Waals Materials

Gan,

Liu,

Liu

et al. 2024

ACS Appl. Mater. Interfaces

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“…27–29 Heterojunctions with type-II and type-III tunneling characteristics have garnered significant attention in research and development, which offer advantages such as the ability to efficiently separate photocarriers and the potential for achieving broadband optical absorption. 30–40 However, one of the key challenges in type-II and type-III optoelectronics is the need to address ultrafast switching speeds to keep pace with the rapid developments in optoelectronic devices with low photocurrent on/off ratio. Unlike type-II and type-III heterostructures, type-I heterostructures refer to heterostructures by having the minimum conduction band and the maximum valence band within the same semiconductor material.…”

Section: Introductionmentioning

confidence: 99%

Straddling SnSe₂/SnS₂ van der Waals tunneling heterostructures for high performance broadband photodetectors

Cong,

Shah,

2024

J. Mater. Chem. C

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In Situ Construction of SnS₂@SnO₂ Heterostructure for Photo‐Assisted Electrocatalysis of Oxygen Evolution Reaction

Wang,

et al. 2024

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Photo‐assisted electrocatalysis has arisen as a promising approach for hydrogen generation by incorporating photocatalysts into electrocatalysts. 2D SnS2 is a photocatalyst that absorbs visible light. However, the rapid recombination of photo‐generated electron‐hole pairs significantly reduces the overall photocatalytic efficiency of SnS2, limiting its practical application. Thus, this study prepares an in situ heterojunction SnS2@SnO2 using a one‐step hydrothermal method. The degradation efficiency of methyl orange (MO) using SnS2@SnO2 is measured, achieving a degradation rate of 92.75% within 1 h, which is 1.9 times higher than that of pure SnS2. Additionally, FeNiS/SnS2@SnO2 is synthesized and exhibited significant improvements in the photo‐assisted oxygen evolution reaction (OER). It achieves an overpotential of 260 mV and a Tafel slope of 65.1 mV dec−1 at 10 mA cm−2, showing reductions of 11.8% and 31.8%, respectively, compared to FeNiS alone. These enhancements highlight the strong photo‐response capability of SnS2@SnO2. Under the internal electric field of SnS2@SnO2, the photogenerated electrons in the conduction band of SnS2 quickly move toward SnO2, facilitating efficient photocatalytic reactions. FeNiS, with a lower Fermi energy level (EF), facilitates electron transfer from SnS2@SnO2 and enhances OER performance by efficiently participating in the reaction. This study paves a new path for 2D photocatalyst materials.

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SnS₂/MoS₂ van der Waals Heterostructure Photodetector with Ultrahigh Responsivity Realized by a Photogating Effect

Cited by 6 publications

References 50 publications

Symmetry-Reduction Enhanced Polarization-Sensitive Photoresponse Based on One-Dimensional van der Waals Materials

Symmetry-Reduction Enhanced Polarization-Sensitive Photoresponse Based on One-Dimensional van der Waals Materials

Straddling SnSe₂/SnS₂ van der Waals tunneling heterostructures for high performance broadband photodetectors

In Situ Construction of SnS₂@SnO₂ Heterostructure for Photo‐Assisted Electrocatalysis of Oxygen Evolution Reaction

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SnS2/MoS2 van der Waals Heterostructure Photodetector with Ultrahigh Responsivity Realized by a Photogating Effect

Cited by 6 publications

References 50 publications

Symmetry-Reduction Enhanced Polarization-Sensitive Photoresponse Based on One-Dimensional van der Waals Materials

Symmetry-Reduction Enhanced Polarization-Sensitive Photoresponse Based on One-Dimensional van der Waals Materials

Straddling SnSe2/SnS2 van der Waals tunneling heterostructures for high performance broadband photodetectors

In Situ Construction of SnS2@SnO2 Heterostructure for Photo‐Assisted Electrocatalysis of Oxygen Evolution Reaction

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SnS₂/MoS₂ van der Waals Heterostructure Photodetector with Ultrahigh Responsivity Realized by a Photogating Effect

Straddling SnSe₂/SnS₂ van der Waals tunneling heterostructures for high performance broadband photodetectors

In Situ Construction of SnS₂@SnO₂ Heterostructure for Photo‐Assisted Electrocatalysis of Oxygen Evolution Reaction