SnS2 as a Saturable Absorber for Mid-Infrared Q-Switched Er:SrF2 Laser

Mid-infrared (MIR) pulsed lasers operating in the ∼3 μm region play a crucial role in various applications, including molecular spectroscopy, ultrafast molecular imaging, and laser-assisted surgery. Despite recent advancements in MIR gain platforms, a notable technological challenge remains in the absence of an effective optical Q-switch. Here, a remarkable optical Q-switch in the 3 μm region based on a Dirac semimetal PtTe2 saturable absorber is realized. By modulating the surface state of PtTe2, the pulsed laser exhibited an increase in average power, escalating from 521 to 588 mW, accompanied by a significant decrease in pulse width from 368 to 187 ns. Nondegenerate pump–probe measurements showed that the recombination rate of the photocarrier in thinner PtTe2 nanoplates was effectively accelerated, primarily attributed to the substantial increase in surface state density, leading to better saturable absorption performance. As the thickness of the PtTe2 nanoplates decreases, the nonsaturable loss decreases from 12% to 3%, while the modulation depth increases from 6% to 12%. The enhanced ultrafast nonlinear absorption enables flexible modulation of saturation absorption parameters, which endows high-performance MIR pulsed laser generation.

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B-AsP as the saturable absorber for a mid-infrared 3 µm nanosecond laser

Hu,

Du,

et al. 2024

Opt. Continuum

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Black arsenic-phosphorus (B-AsP) has better stability than traditional black phosphorus (BP), and it was utilized to modulate a mid-infrared (mid-IR) 3 µm laser for what we believe to be the first time. The linear and nonlinear absorption characteristics of B-AsP at 3 µm were also investigated. The maximum continuous wave (CW) output power of the Er: SrF2 laser was 240 mW with an absorbed pump power of 2.87 W, resulting in a corresponding slope efficiency of 8.1%. During passively Q-switched (PQS) experiments, a laser pulse with a minimum duration of 188 ns was successfully generated at a repetition rate of 78 kHz, and the relevant single-pulse energy was 2.0 µJ. To the best of our knowledge, this is the narrowest passively Q-switched pulse for Er:SrF2 crystal laser. Our results indicate that B-AsP SA was a promising candidate to be the optical modulator in the mid-IR wavelength range.

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SnS2 as a Saturable Absorber for Mid-Infrared Q-Switched Er:SrF2 Laser

Cited by 3 publications

References 39 publications

Structural, optical and electrical properties in multilayer SnS2(1-x)Se2(x) compounds for energy, thermoelectric and photocatalytic application

Structural, optical and electrical properties in multilayer SnS2(1-x)Se2(x) compounds for energy, thermoelectric and photocatalytic application

High-output ∼3 μ m MIR pulsed laser enabled by surface state regulation in PtTe2 optical switch

B-AsP as the saturable absorber for a mid-infrared 3 µm nanosecond laser

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