SnS2 Nanoparticles and Thin Film for Application as an Adsorbent and Photovoltaic Buffer

Abstract

Energy consumption and environmental pollution are major issues faced by the world. The present study introduces a single solution using SnS2 for these two major global problems. SnS2 nanoparticles and thin films were explored as an adsorbent to remove organic toxic materials (Rhodamine B (RhB)) from water and an alternative to the toxic cadmium sulfide (CdS) buffer for thin-film solar cells, respectively. Primary characterization tools such as X-ray photoelectron spectroscopy (XPS), Raman, X-ray diffraction (XRD), and UV-Vis-NIR spectroscopy were used to analyze the SnS2 nanoparticles and thin films. At a reaction time of 180 min, 0.4 g/L of SnS2 nanoparticles showed the highest adsorption capacity of 85% for RhB (10 ppm), indicating that SnS2 is an appropriate adsorbent. The fabricated Cu(In,Ga)Se2 (CIGS) device with SnS2 as a buffer showed a conversion efficiency (~5.1%) close to that (~7.5%) of a device fabricated with the conventional CdS buffer, suggesting that SnS2 has potential as an alternative buffer.

Scanning Tunneling Spectroscopy Method for the Prediction of Semiconductor Heterojunction Performance as a Prequel for Device Development

“…Recent studies present SnS 2 as a buffer layer for the Cu­(In,Ga)­Se 2 (CIGS) solar cell device with similar performance to CdS . In this work, Gedi et al fabricated a solar cell with SnS 2 , presenting an open-circuit voltage ( V OC ) of 0.41 V, a short-circuit current density ( J SC ) of 25.67 mA cm –2 , a fill factor (FF) of 49%, and a conversion efficiency (η) of ∼5.1%.…”

“…Complementarily, SnS 2 is an n-type semiconductor with a hexagonal crystal structure with a = 0.364 nm, b = 0.364 nm, c = 0.589 nm lattice parameters, and P3m1 space group (Figure c). SnS 2 has a flexible wide band gap in the range of 1.8–2.9 eV, varying according to the deposition methods. − This compound is synthesized using inexpensive elements, simple controllable chemical stoichiometry, and consistent environmental stability. SnS 2 has a plethora of potential applications ranging from diodes, photodectors, gas sensors, batteries, supercapacitors, field effect transistors, and buffer layers for heterojunction solar cells .…”

“…SnS 2 has a flexible wide band gap in the range of 1.8–2.9 eV, varying according to the deposition methods. − This compound is synthesized using inexpensive elements, simple controllable chemical stoichiometry, and consistent environmental stability. SnS 2 has a plethora of potential applications ranging from diodes, photodectors, gas sensors, batteries, supercapacitors, field effect transistors, and buffer layers for heterojunction solar cells . SnS 2 synthesis can be achieved by different processes, such as CVD, wet chemical processes, and spray pyrolysis .…”

“…SnS 2 has a plethora of potential applications ranging from diodes, photodectors, gas sensors, batteries, supercapacitors, field effect transistors, and buffer layers for heterojunction solar cells . SnS 2 synthesis can be achieved by different processes, such as CVD, wet chemical processes, and spray pyrolysis . The SnS 2 -calculated (DFT) band structure is shown in Figure d, where one can observe the occurrence of an indirect gap.…”

Synthesis of BiFeO3/ZnMgAl-LDH nanocomposite for instantaneous decolorization of methylene blue by ultrasonic induced adsorption system: characterization and equilibrium studies

“…Organic dyes are broadly applied in industries, including pharmaceuticals, paper, leather, textiles, makeup, and plastics, as a colorant agent [1][2][3][4][5][6]. Up to 20% of total dye output is wasted during industrial processing, causing pollution and eutrophication and disturbing aquatic habitats [7][8][9].…”