PbTe/SnTe superlattices were grown on ͑111͒ BaF 2 substrates by molecular beam epitaxy using PbTe as buffer layers. The individual layer thickness and number of repetitions were chosen in order to change the strain profile in the superlattices from completely pseudomorphic to partially relaxed. The superlattices structural properties were investigated by making reciprocal space maps around the asymmetric ͑224͒ Bragg diffraction points and /2⌰ scans for the ͑222͒ diffraction with a high resolution diffractometer in the triple axis configuration. With the strain information obtained from the maps, the ͑222͒ /2⌰ scan was simulated by dynamical diffraction theory. The simulated spectra of the pseudomorphic superlattices, in which the in-plane lattice constant is assumed to be the same as the PbTe buffer throughout the superlattice, fitted in a remarkably good agreement with the measured data, indicating that almost structurally perfect samples were obtained. For the thicker superlattices, the ͑224͒ reciprocal space maps revealed a complex strain profile. Our results show the importance of detailed structural characterization on the interpretation of the electrical properties.