Researchers are focused on developing
an efficient and
eco-friendly
thermoelectric material, which has increased interest in tin selenide
(SnSe). This study optimizes the sintering temperature (T
s) for polycrystalline SnSe fabrication through a powder
metallurgy process. It also explores the potential benefits of using
Zn as a nontoxic dopant to enhance its thermoelectric properties.
The detailed analyses of the data generated from XRD, SEM, EDS, Raman
spectroscopy, XPS, high-resolution TEM (HRTEM), and thermoelectric
properties measurement techniques were used to optimize the sintering
temperature and understand the impact of doping concentration for
polycrystalline SnSe. The optimized T
s for SnSe was 600 °C on the basis of phase formation and the
highest ZT value (∼0.55 at 772 K). A transition
from n-type to p-type in the Seebeck coefficient data at T
s < 600 °C was observed because of the dominant
effect of tin oxide over SnSe, which was suppressed with the formation
of SnSe with increasing measured temperatures. The addition of Zn
to SnSe led to a boost in its ZT value by curbing
thermal conductivity through the creation of a ZnSe second phase in
Sn0.95Zn0.05Se, which resulted in an impressive ZT value of 1.05 at 783 K. The obtained ZT value, i.e., 1.05 at 783 K, is 91% higher than the undoped polycrystalline
SnSe and found to be the maximum among the reported ZT values for Zn-doped SnSe (bulk, polycrystalline). The maximum voltage
(∼241.5 mV at 425 °C) generated from the Zn (0.05)-doped
SnSe was 57% more than that generated from the undoped SnSe.