Sodium distribution in oxide by radiochemical analysis and its effect on silicon surface potential

Yon, E.; Ko, Wen H.; Kuper, A. B.

doi:10.1109/iedm.1965.187629

Cited by 2 publications

(3 citation statements)

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“…Phosphate glass-treated SiO2 films were included in the samples for both neutron activation and tracer experiments. Where the results can be compared they are in general agreement with those recently reported by Yon, Ko, and Kuper (15), and also by Carlson, Fuller, and Osborne (16). However, there are differences in experimental approach and information obtained.…”

supporting

confidence: 89%

“…The results are similar to those of ref. (15) and ( 16) although the interior concentration indicated in the present work is somewhat lower.…”

Section: Results Oy Neutron Activation Experiments--figurecontrasting

confidence: 47%

“…This characteristic profile suggests some barrier at the outer surface of the oxide. The difficulty of diffusing large negative ions such as C1required for charge neutrality may account for it (15).…”

Section: Discussion and Summarymentioning

confidence: 99%

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Studies of Sodium in SiO[sub 2] Films by Neutron Activation and Radiotracer Techniques

Buck¹,

Allen²,

Dalton³

et al. 1967

J. Electrochem. Soc.

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Electrical instabilities in SiO2 films under high fields at elevated temperatures have been widely attributed to mobile ionic impurities, with sodium suspected as the most important ion. Phosphate glass treatments on SiO2 are known to have a stabilizing effect. This paper reports neutron activation experiments to determine sodium contamination on and in steam‐grown SiO2 films and also diffusion and drift experiments with tracer sodium. Phosphate glass‐treated SiO2 films were included in the samples. SiO2 films grown and handled under various conditions had sodium densities of 7×1011 normalto 3×1014 normalatoms/cm2 , which could be easily removed or exchanged by washing and light etching. Densities remaining inside the 6000Aå films after washing and light etching were ⋜4×1011–4×1012/cm2 .Tracer diffusions into SiO2 at 600°C produced profiles which were high near the surface and lower through the interior of the film, similar to those observed by neutron activation for unintentional sodium contamination. Phosphate glass layers on SiO2 absorbed and stopped the sodium under similar conditions. With an applied field at elevated temperature (+4v, 1 min, 400°C) tracer sodium drifted through an SiO2 film under gold dot electrodes, piled up at the normalSi‐SiO2 interface, and carried a substantial part of the charge transported. There was no detectable diffusion in uncharged areas. A layer of phosphate glass applied over an SiO2 film absorbed sodium and prevented it from drifting into the SiO2 film under the gold dots.

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supporting

confidence: 89%

“…The results are similar to those of ref. (15) and ( 16) although the interior concentration indicated in the present work is somewhat lower.…”

Section: Results Oy Neutron Activation Experiments--figurecontrasting

confidence: 47%