Sodium doping effects on the crystalline and electrical properties of Cu2ZnSnSe4 thin films

Ma, Tuteng; Jiang, Guoshun; Liu, Weifeng; Zhu, Chen

doi:10.1016/j.solener.2015.02.033

Cited by 16 publications

(4 citation statements)

References 19 publications

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“…This result can be attributed to the formation of low melting point phases such as Na 2 Se x with a melting point of %300 °C. [22,23,28,29] These alkali metal-related compounds are in the liquid phase during the heating stage, which can promote element diffusion and merge CZTSe grain boundaries, and finally enhance the crystallinity of the absorbers.…”

Section: Resultsmentioning

confidence: 99%

Passivation of Grain Boundaries and Defects in CZTSSe Solar Cells by In Situ Na Doping

et al. 2023

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Alkali metal doping plays a great role in improving the efficiency of Cu2SnZn(S, Se)4 (CZTSSe) thin film solar cells. However, it is unclear how to realize the ideal distribution of alkali metal in CZTSSe films. Meanwhile, the mechanisms of alkali metal doping are still controversial. Herein, Na‐doped CZTSSe cells are fabricated by magnetron sputtering with Na‐containing Cu2SnZnS4 target which is in situ doping and annealing in selenization atmosphere. The incorporation of Na enhances the diffusion of K from the substrates to the absorbers. Na doping can increase the contact potential at the grain boundaries, which has beneficial effects on reducing the carrier recombination at the grain boundaries. Furthermore, Na incorporation modifies the conduction band offset at the CdS/CZTSSe interface from −0.07 to 0.03 eV. The defects and recombination in different regions are quantitatively extracted. It is demonstrated that the optimized grain boundary electrical properties and the heterojunction band alignment passivate the defects of the depletion region, the heterojunction interface, and the quasineutral region. Finally, a total‐area efficiency of 11.18% has been achieved in CZTSSe solar cell with an in situ Na doping concentration of 0.6 at%.

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Section: Resultsmentioning

confidence: 99%

Passivation of Grain Boundaries and Defects in CZTSSe Solar Cells by In Situ Na Doping

et al. 2023

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“…† Na concentration and distribution is known to have a dominating effect on overall device performance. 9, [14][15][16]18,19 To better observe the changes to Na distribution, 2 samples from a partial device (CZTSSe on Mo substrate with no CdS emitter layer or contacts) containing high amounts of Na (30 nm NaF) were investigated using TOF-SIMS. The depth prole can be seen in Fig.…”

Section: Resultsmentioning

confidence: 99%

“…In particular, due to the accumulation of Na at the GBs which is known to have a prominent effect on overall device performance. 9, [14][15][16]18,19 To investigate the local electrical properties of CZTSSe with different Na concentrations, three sample sets were fabricated without the emitter and contact layers thus revealing the CZTSSe layer. The sample sets were investigated using Kelvin probe force microscopy (KPFM).…”

Section: Resultsmentioning

confidence: 99%

“…For that reason, signicant effort has been made to investigate and prevent electronic losses and low open-circuit voltages (V oc ) [9][10][11] that impede cell performance and reduce the overall device efficiency 12,13 A successful attempt to reduce the voltage decit has been made by incorporation of Na into the device. The addition of Na improves efficiency by increasing grain size [14][15][16] and passivating trap states 17 that result in charge carrier recombination, thus diminishing the cell performance. 9,18,19 These improvements originate from the effect of Na on grain growth during the fabrication process and can provide further improved passivation using subsequent thermal treatments.…”

Section: Introductionmentioning

confidence: 99%

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