Soft Degradation and Recovery under ESD stress of E-Mode GaN HEMTs with P-GaN Gate

Wang, Mei; He, Zhiyuan; Ren, Yanfei; Hao, Lichao; Wu, Zhaohui; Li, Bin

doi:10.1109/icept52650.2021.9568192

2021 22nd International Conference on Electronic Packaging Technology (ICEPT) 2021

DOI: 10.1109/icept52650.2021.9568192

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Soft Degradation and Recovery under ESD stress of E-Mode GaN HEMTs with P-GaN Gate

Mei Wang

Zhiyuan He

Yanfei Ren

et al.

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2024

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Cited by 1 publication

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Investigating Forward Gate ESD Mechanism of Schottky-Type p-GaN Gate HEMTs Using a SiC-Based High-Speed Pulsed I-V Test System

Sun,

Zheng,

Shu

et al. 2024

IEEE Electron Device Lett.

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Investigating Forward Gate ESD Mechanism of Schottky-Type p-GaN Gate HEMTs Using a SiC-Based High-Speed Pulsed I-V Test System

Sun,

Zheng,

Shu

et al. 2024

IEEE Electron Device Lett.

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Soft Degradation and Recovery under ESD stress of E-Mode GaN HEMTs with P-GaN Gate

Cited by 1 publication

References 15 publications

Investigating Forward Gate ESD Mechanism of Schottky-Type p-GaN Gate HEMTs Using a SiC-Based High-Speed Pulsed I-V Test System

Investigating Forward Gate ESD Mechanism of Schottky-Type p-GaN Gate HEMTs Using a SiC-Based High-Speed Pulsed I-V Test System

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