Soft-Switching Losses in GaN and SiC Power Transistors Based on New Calorimetric Measurements

Weimer, Julian; Kallfass, Ingmar

doi:10.1109/ispsd.2019.8757650

Cited by 14 publications

(4 citation statements)

References 8 publications

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“…Dynamic calorimetric measurement incorporates a temperature rise monitoring during transient thermal event. The method is attractive The measurement precision of this kind of methods is reported to be comparable with static measurements [6], [7].…”

Section: Calorimetric Measurementmentioning

confidence: 93%

A Simple Calorimetric Measurement of SiC MOSFET Switching Loss and Comparison with Electric Measurement

Miklas¹,

Procházka²

2022

Proceedings II of the 28st Conference STUDENT EEICT 2022: Selected Papers.

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This paper proposes a simple and accessible method for dynamic calorimetric measurement of ultra-fast power semiconductor devices switching loss. It utilizes a temperature rise monitoring of a copper cube thermally coupled with a semiconductor chip. No special chambers or heat exchangers are used and no additional wiring compared to standard electric pulsed test. This provides an opportunity to perform a direct comparison with traditional electric power loss measurement, including all of the parasitic influences and further investigation of power loss with intentional varying of particular elements impact, which absent in available literature. The paper establishes the test method and setup as well as a basic comparison of calorimetric and electric measurement.

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Section: Calorimetric Measurementmentioning

confidence: 93%

A Simple Calorimetric Measurement of SiC MOSFET Switching Loss and Comparison with Electric Measurement

Miklas¹,

Procházka²

2022

Proceedings II of the 28st Conference STUDENT EEICT 2022: Selected Papers.

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show abstract

“…Current research based on analytical models and experimental comparison shows, that wide bandgap semiconductors, in particular GaN devices, lead to a major efficiency increase in soft-switching applications [18]. In order to select the most suitable semiconductor for the LLC stage, GaN and silicon carbide (SiC) power transistors were characterized with new calorimetric measurements and compared for use in the planned topology [20], [21]. In contrast to conventional characterization using the double-pulse test (DPT) method, the transient Z th -calibrated calorimetric measurement can be used to accurately determine even very small switching loss energy in ZVS operation.…”

Section: B Semiconductor Selectionmentioning

confidence: 99%

“…The two-stage architecture consists of a totempole power factor correction (PFC) stage and an isolated resonant half-bridge LLC converter with synchronous rectification (SR). To enable high switching frequencies for small passive components, this well-established topology [14]- [19] is combined with a semiconductor selection based on new calorimetric measurements of zero-voltage switching (ZVS) losses [20], [21]. Miniaturized half-bridges and a 3D-stacked design of the AC/DC converter allow the compact connection of both stages while maintaining necessary isolation distances.…”

Section: Introductionmentioning

confidence: 99%

Miniaturization and Thermal Design of a 170 W AC/DC Battery Charger Utilizing GaN Power Devices

Weimer

Koch

Nitzsche

et al. 2022

IEEE Open J. Power Electron.

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This paper presents the design and analysis of a high-density two-stage battery charger for mid-power applications like small electric vehicles and high-performance laptops utilizing gallium nitride (GaN) power devices. In addition to adherence of maximum junction temperatures, a thermal analysis is carried out for in-housing operation, which is particularly critical for fanless wall chargers. Design measures include calorimetric semiconductor selection, half-bridge miniaturization, thermally conductive epoxy resin and reference-based convection modeling for thermally optimized component placement using 3D-stacking. Furthermore, the remaining optimization potential of the charger is estimated by virtual prototyping. A 170 W hardware prototype is developed and tested, achieving a two-stage power section efficiency of 95.4% with a maximum switching frequency of 550 kHz. This results in a power density in open-housing operation of 1.6 kW/dm 3 . Using epoxy resin, copper and graphite heat spreaders, an in-housing operation power density of 1.1 kW/dm 3 is achieved with minor reduction of output power due to surface temperature constraints.INDEX TERMS AC-DC power conversion, battery chargers, epoxy resins, gallium nitride, graphite.

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“…Therefore, it is required to provide detailed measurements and analysis experimentally or by simulation in order to estimate expected behavior for operational conditions of the system. Several approaches, where comparisons on conventional and GaN technology is provided, can be found, while it is being clearly shown, how perspective technology enables to improve specific operational and qualitative indicators of power semiconductor component in [2]- [5].…”

Section: Introductionmentioning

confidence: 99%

Evaluation of GaN Power Transistor Switching Performance on Characteristics of Bidirectional DC-DC Converter

Frivaldský

Morgos

Zelnik

2020

ELEKTRON ELEKTROTECH

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The paper deals with the experimental analysis of the switching performance of selected GaN (Galium Nitride) power transistor, whose use is then expected in bidirectional buck/boost DC-DC converter. The switching performance was evaluated through highly accurate and verified simulation models of GS61008P transistor from GaN systems. Experiments have been provided for a wide spectrum of switching frequency and load current in order to verify transistor performance. Then, based on the results, it was expected that high-frequency operation (above 500 kHz) should not distort the efficiency performance of the designed bidirectional converter. This was confirmed after laboratory measurements of the efficiency of the proposed DC-DC converter, while operation under very high switching frequency was more effective compared to low-frequency operation. Over 95 % of efficiency was achieved for both buck and boost mode (125 W), even switching frequency was above 500 kHz.

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Soft-Switching Losses in GaN and SiC Power Transistors Based on New Calorimetric Measurements

Cited by 14 publications

References 8 publications

A Simple Calorimetric Measurement of SiC MOSFET Switching Loss and Comparison with Electric Measurement

A Simple Calorimetric Measurement of SiC MOSFET Switching Loss and Comparison with Electric Measurement

Miniaturization and Thermal Design of a 170 W AC/DC Battery Charger Utilizing GaN Power Devices

Evaluation of GaN Power Transistor Switching Performance on Characteristics of Bidirectional DC-DC Converter

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