2011
DOI: 10.7567/jjap.50.098001
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Soft X-ray Conversion Efficiencies in Laser-Produced Xenon and Tin Plasmas in a 5–17 nm Wavelength Range

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Cited by 5 publications
(3 citation statements)
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“…The LPX system is compact in size compared with the synchrotron radiation facility and is expected to be used in industry. 23,24) It was clarified that the critical temperatures for the crystallization of a-Si, a-Ge, and a-SiGe films are reduced by approximately 100 °C in comparison with conventional FA. In addition, the lowtemperature activation of boron in a Si wafer is realized by using this technique.…”
Section: Introductionmentioning
confidence: 99%
“…The LPX system is compact in size compared with the synchrotron radiation facility and is expected to be used in industry. 23,24) It was clarified that the critical temperatures for the crystallization of a-Si, a-Ge, and a-SiGe films are reduced by approximately 100 °C in comparison with conventional FA. In addition, the lowtemperature activation of boron in a Si wafer is realized by using this technique.…”
Section: Introductionmentioning
confidence: 99%
“…[11][12][13][14] The LPX system is compact in size compared with the synchrotron radiation facility. 15,16) It is found that the crystallization temperature of a-Si and a-Ge films on a glass substrate decreases at about 100 °C in the case of soft X-ray irradiation. 10) For solar cell applications, a thick film is necessary to absorb solar light.…”
Section: Introductionmentioning
confidence: 99%
“…We consider this value to be reasonable compared with a maximum CE of 25% in the 5-17 nm range obtained from a solid Xe target in a previous experiment. 13) With regard to the CE in the water window region, it can be obtained from the ratio of the area in the water window to that in the full detection range of the Ar spectrum shape, as shown in Fig. 2.…”
mentioning
confidence: 99%