Soft X-ray detection and photon counting spectroscopy with commercial 4H-SiC Schottky photodiodes

Zhao, Shifan; Gohil, T.; Lioliou, G.; Barnett, A. M.

doi:10.1016/j.nima.2016.05.053

Cited by 19 publications

(22 citation statements)

References 24 publications

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“…8 As p þ -i-n þ mesa X-ray photodiode (200 lm diameter, 3 lm i layer) wafer was grown by metalorganic vapour phase epitaxy (MOVPE) on a commercial 2 in. GaAs n þ substrate.…”

Section: Diode Designmentioning

confidence: 99%

“…Wide bandgap materials, such as GaAs, [1][2][3][4][5] SiC, [6][7][8] diamond, 9,10 Al 0.52 In 0.48 P, [11][12][13] and Al x Ga 1-x As, [14][15][16] are of interest for use in space science and extreme terrestrial applications where detectors are exposed to high temperatures and intense radiation. Traditional Si X-ray spectrometers often require significant shielding and cooling mechanisms in order to function within extreme environments (e.g., ) 20 C), whereas wide bandgap detectors are more robust and can possess superior energy resolution at high temperatures due to lower thermally induced leakage currents.…”

Section: Introductionmentioning

confidence: 99%

“…15 In addition to high Al concentrations (e.g., Al 0.8 Ga 0.2 As), Al 0.2 Ga 0. 8 As has also been preliminarily studied for X-ray detection at room temperature; three Al 0.2 Ga 0. 8 As p þ -i-n þ mesa X-ray photodiodes (200 lm diameter, 3 lm i layer) were characterised for their response to soft X-ray illumination.…”

Section: Introductionmentioning

confidence: 99%

“…8 As has also been preliminarily studied for X-ray detection at room temperature; three Al 0.2 Ga 0. 8 As p þ -i-n þ mesa X-ray photodiodes (200 lm diameter, 3 lm i layer) were characterised for their response to soft X-ray illumination. 20 In this article, extensive characterisation (including temperature dependence measurements) of two Al 0.2 Ga 0.…”

Section: Introductionmentioning

confidence: 99%

“…20 In this article, extensive characterisation (including temperature dependence measurements) of two Al 0.2 Ga 0. 8 As p þ -in þ mesa X-ray photodiodes is presented. The devices were grown and fabricated to the Authors' specifications at the EPSRC National Centre for III-V Technologies, Sheffield, UK.…”

Section: Introductionmentioning

confidence: 99%

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Temperature dependence of Al0.2Ga0.8As X-ray photodiodes for X-ray spectroscopy

Whitaker

Butera

Lioliou

et al. 2017

Journal of Applied Physics

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Two custom-made Al0.2Ga0.8As p+-i-n+ mesa X-ray photodiodes (200 μm diameter, 3 μm i layer) have been electrically characterised across the temperature range −20 °C to 60 °C. The devices were connected to a custom-made charge sensitive preamplifier to produce an AlGaAs photon-counting X-ray spectrometer. The devices' responses to illumination with soft X-rays from an 55Fe radioisotope X-ray source (Mn Kα = 5.9 keV; Mn Kβ = 6.49 keV) were investigated across the temperature range −20 °C to 20 °C. The best energy resolution (FWHM at 5.9 keV) achieved at 20 °C was 1.06 keV (with the detector at 10 V reverse bias). Improved FWHM was observed with the devices at temperatures of 0 °C (0.86 keV) and −20 °C (0.83 keV) with the photodiode reverse biased at 30 V. The average electron hole pair creation energy was experimentally measured and determined to be 4.43 eV ± 0.09 eV at 20 °C, 4.44 eV ± 0.10 eV at 0 °C, and 4.56 eV ± 0.10 eV at −20 °C.

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“…8 As p þ -i-n þ mesa X-ray photodiode (200 lm diameter, 3 lm i layer) wafer was grown by metalorganic vapour phase epitaxy (MOVPE) on a commercial 2 in. GaAs n þ substrate.…”

Section: Diode Designmentioning

confidence: 99%