Applied Surface Science
 2012
DOI: 10.1016/j.apsusc.2011.03.144
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Soft X-ray photoemission study of nitrogen diffusion in TiN/HfO:N gate stacks

E. Martínez
1
,
C. Gaumer
2
,
S. Lhostis
3
et al.
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Cited by 2 publications
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“…Removal of the upper thick metallic layers by chemical etching is an option [5]. However, the chemical etch selectivity is not always sufficient to preserve the underlying thin metallic and oxide layers.…”
Section: Introductionmentioning
confidence: 99%

Backside versus frontside advanced chemical analysis of high-k/metal gate stacks

Martínez
1
,
Saidi
2
,
Veillerot
3
et al. 2015
Journal of Electron Spectroscopy and Related Phenomena
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“…Removal of the upper thick metallic layers by chemical etching is an option [5]. However, the chemical etch selectivity is not always sufficient to preserve the underlying thin metallic and oxide layers.…”
Section: Introductionmentioning
confidence: 99%

Backside versus frontside advanced chemical analysis of high-k/metal gate stacks

Martínez
1
,
Saidi
2
,
Veillerot
3
et al. 2015
Journal of Electron Spectroscopy and Related Phenomena
Self Cite
0
0
0
0
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Formation of an N-pair at the Si(001)/α–quartz interface

Kim
1
,
Jeong
2
2016
Current Applied Physics
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0
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