SOI Materials

Colinge, Jean–Pierre

doi:10.1007/978-1-4757-2611-4_2

Cited by 7 publications

(4 citation statements)

References 108 publications

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“…There are several types of SIMOX with varying thicknesses of the top Si film and BOX, depending on the implantation and annealing parameters. For thick SIMOX, used in our experiments, O + 190 keV, 1.8×10 18 cm −2 implantation is used, followed by a 6 h annealing at 1300 • C [15]. The final structure consists of a 200 nm crystal Si film and a 400 nm buried SiO 2 layer on top of the Si substrate.…”

Section: Introductionmentioning

confidence: 99%

MEIS study of antimony implantation in SIMOX and vacancy-rich Si(1 0 0)

Dalponte¹,

Boudinov²,

Гончарова³

et al. 2007

J. Phys. D: Appl. Phys.

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Medium energy ion scattering was used to study the distribution of ion-implanted Sb dopant in Si with excess vacancies and separation by implanted oxygen (SIMOX) substrates and the effects of thermal treatments. Extra vacancies in Si were generated by N or O pre-implantations at high temperature. Effects related to the different chemical nature of the pre-implanted species are expected under these conditions. Different Sb annealing behaviours and distributions were observed for O and N pre-implanted Si. The oxygen-containing samples (SIMOX and O pre-implanted Si) presented higher substitutionality after long annealing times. The nitrogen pre-implanted Si presented the lowest amount of segregated Sb and more uniform dopant distribution. Both pre-implanted samples, N and O, had a large dopant loss to the atmosphere during annealing.

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Section: Introductionmentioning

confidence: 99%

MEIS study of antimony implantation in SIMOX and vacancy-rich Si(1 0 0)

Dalponte¹,

Boudinov²,

Гончарова³

et al. 2007

J. Phys. D: Appl. Phys.

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“…The buried oxide is formed by a high dose oxygen implantation followed by a long high temperature annealing. For standard SIMOX, O + 190 keV, 1.810 18 cm -2 implantation is used, followed by a 6 hour annealing at 1300 o C (10). The final structure consists of a 200 nm crystal Si film and a 400 nm buried SiO 2 layer on top of the Si substrate.…”

Section: Introductionmentioning

confidence: 99%

MEIS Study of Sb Implantation in O or N pre-implanted Si(001) and SIMOX

et al. 2007

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Medium energy ion scattering (MEIS) was used to study distribution of ion-implanted Sb dopant in Si with excess vacancies and SIMOX substrates and the effects of thermal treatments. Extra vacancies in Si were generated by N or O pre-implantations at high temperature. Effects related to the different chemical nature of the pre-implanted species are expected under these conditions. Different Sb annealing behavior and distribution were observed for O and N pre-implanted Si. The oxygen containing samples (SIMOX and O pre-implanted Si) presented higher substitutionality after long annealing times. The nitrogen pre-implanted Si presented the lowest amount of segregated Sb and more uniform dopant distribution. Both pre-implanted samples, N and O, had a large dopant loss to the atmosphere during annealing.

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“…1,2 Of all the ways to prepare SOI substrates, Separation by Implanted Oxygen (SIMOX) has received the most attention. A wide range of SIMOX fabrication processing routes have been explored with thorough characterization of the SOI and Buried OXide (BOX) layers.…”

Section: Introductionmentioning

confidence: 99%

Thermal activation of As implanted in bulk Si and separation by implanted oxygen

Dalponte

Boudinov

Гончарова

et al. 2004

Journal of Applied Physics

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We have studied arsenic (As) diffusion and its electrical activation in two different types of silicon substrates: bulk Si and separation by implanted oxygen (SIMOX) wafers. Both substrates were implanted with a dose of 5 ϫ 10 14 cm −2 As + at 20 keV. The samples were annealed and physical characterization was performed with secondary ion mass spectrometry (SIMS), Rutherford backscattering spectrometry, and medium energy ion scattering. The electrical properties of the film were extracted by Hall measurements. The SIMS results showed a lower dopant outdiffusion loss to the atmosphere during annealing in the SIMOX samples. The electrical results for the SIMOX samples were also superior to those of bulk Si due to the higher dopant retention, likely the result of a higher concentration of vacancies, which in turn increases the relative fraction of As which is activated (in substitutional sites). The net effect was a higher sheet carrier concentration and lower sheet resistance in the SIMOX samples. The implantation damage removal was superior in SIMOX samples compared to bulk Si ones.

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SOI Materials

Cited by 7 publications

References 108 publications

MEIS study of antimony implantation in SIMOX and vacancy-rich Si(1 0 0)

MEIS study of antimony implantation in SIMOX and vacancy-rich Si(1 0 0)

MEIS Study of Sb Implantation in O or N pre-implanted Si(001) and SIMOX

Thermal activation of As implanted in bulk Si and separation by implanted oxygen

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