Sol-gel-derived ZnO/Cu/ZnO multilayer thin films and their optical and electrical properties

Wang, Mingsong; Ji, Jianyu; Luo, Shuaijun; Lin, Jiang; Ma, Jiangtao; Xie, Xu; Yang, Ping; Ge, Juanjuan

doi:10.1016/j.mssp.2016.04.020

Cited by 12 publications

(7 citation statements)

References 27 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Simulation and experimental methods were used to study the influence of Cu and ZnO layer thickness on the performance of ZnO(Cu) sandwiched film. Both theoretical analysis and experimental results prove that the electrical conductivity and optical properties of oxide transparent conductive films with a Cu interlayer depend considerably on its thickness [10][11][12][13][14][15][16][17][18]. Generally speaking, electrical conductivity will be improved with the increase of Cu layer thickness because of its excellent conductivity, but the transmittance will increase at first, reach the maximum value at a certain thickness, and then decrease sharply because of the absorption in the Cu layer.…”

Section: Introductionmentioning

confidence: 94%

“…Various technologies, such as magnetron sputtering [11,12], atomic layer deposition [13] and sol-gel [14], have been used to fabricated ZnO(Cu) sandwiched films on different substrates, such as glass [11][12][13][14] and flexible polyethylene naphthalate [15]. Simulation and experimental methods were used to study the influence of Cu and ZnO layer thickness on the performance of ZnO(Cu) sandwiched film.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Influence of Annealing Temperature on Optical Properties of Sandwiched ZnO/Metal/ZnO Transparent Conductive Thin Films

et al. 2022

View full text Add to dashboard Cite

Two sandwiched ZnO/Metal/ZnO transparent conductive thin films, 50nm ZnO/Cu/50nm ZnO (abbreviated as ZnO(Cu)) and 50nm ZnO/Ti/Cu/Ti/50nm ZnO (abbreviated as ZnO(Ti/Cu)) were deposited by magnetron sputtering technology. The comparative analysis of experiment results shows that the introduction of the Ti layer is beneficial to the overall properties of ZnO(Ti/Cu) thin film compared to ZnO(Cu) thin film with the same metal layer thickness. The effect of the annealing temperature on the performance of the two film systems was studied. Although the carrier concentration did not always increase with annealing temperature, the sheet resistances did decrease due to the obvious increase of mobility. The transmittance of ZnO(Cu) thin films increases with annealing temperature, while that of ZnO(Ti/Cu) films increases at first and then decreases. The optical band gap of ZnO(Cu) thin films increases with temperature, but is lower than that of ZnO(Ti/Cu) thin films, whose bandgap first increases with temperature and then decreases. The figure of merit of the ZnO(Ti/Cu) film is better than that of ZnO(Cu), which shows that the overall performance of ZnO(Ti/Cu) films is better, and annealing can improve the performance of the film systems.

show abstract

Section: Introductionmentioning

confidence: 94%

Section: Introductionmentioning

confidence: 99%

Influence of Annealing Temperature on Optical Properties of Sandwiched ZnO/Metal/ZnO Transparent Conductive Thin Films

et al. 2022

View full text Add to dashboard Cite

show abstract

“…Optical bandgap was calculated by using the equation h(hv-Eg) where  stands for the absorption coefficient, hv optical energy and Eg represents the optical band gap. [38] It is clear from the table that optical bandgap increases with decreasing Cu thickness. Decreasing of bandgap may be some Cu atoms permeate ZnO at the interface of the ZnO/Cu/ZnO multilayer.…”

Section: Resultsmentioning

confidence: 94%

Study the Effect of ZnO/Cu/ZnO Multilayer Structure by RF Magnetron Sputtering For Flexible Display Applications

Das¹,

Roymahapatra²,

Nandi³

et al. 2021

ES Mater. Manuf.

View full text Add to dashboard Cite

ZnO/Cu/ZnO multilayer structured glass and Polyethylene naphthalate (PEN) with different thickness of copper (Cu) layer were prepared by RF magnetron sputtering at room temperature. The electrical resistivity of the films were achieved 8.610 -5 •cm and 4.510 -4 •cm, carrier concentration of 5.3210 21 cm -3 and 1.3610 21 cm -3 , low sheet resistance of 12 /cm 2 and 16 /cm 2 respectively on glass and PEN substrate respectively with optical transmission of more than 80% for both cases at the optimum copper layer thickness. Conduction mechanism of the multilayer structure has been explained in terms of metal to oxide carrier injection with the variation of the thickness of the Cu layer. Different optimization procedures were used to achieve good optically transparent and electrically conductive films. The structural characterizations of multilayer films were carried out by X-ray diffraction (XRD); surface morphology, and topography were performed by scanning electron microscopy (SEM) and atomic force microscopy (AFM) respectively. The value of sheet resistance of the structure was influenced by the deposition condition of both layers. Effect of substrate and thickness of the Cu layer was investigated and illustrated.

show abstract

“…22 The appearance of interference fringes indicates that the multilayer films are relatively flat and have homogeneous microstructures. 23 Furthermore, the optical transmittance of the multilayer films depend on the thickness. The increase in multilayer thickness enhanced the interference of the incident light beam into the multilayers.…”

Section: Optical Transmittance and Reflectancementioning

confidence: 99%

Effect of Cu Metallic Interlayer Thickness on Optoelectronic Properties of TiO2-Based Multilayers Deposited by DC Pulsed Magnetron Sputtering

El-Moula

El-Hossary

Raaif

et al. 2021

Journal of Elec Materi

View full text Add to dashboard Cite

The effect of interference on the optoelectronic properties of TiO 2 /Cu/TiO 2 multilayers deposited by DC pulsed magnetron sputtering was scrutinized. The TCT multilayers were arranged with different thicknesses of the Cu metallic interlayer. The outcomes revealed that the band gap energy of TiO 2 / Cu/TiO 2 multilayers decreased with increasing Cu metallic interlayer thickness. The E g value for TiO 2 single layer recorded 3.49 eV and decreased to a value of 3.12 eV for the multilayer film deposited with a 30-nm Cu metallic interlayer. Moreover, the optical conductivity increased as the Cu interlayer thickness increased. Transmittance plots with reasonable numbers of interference fringes were employed to calculate the refractive index of the examined multilayers. The results indicated that the values of n gradually increased with increasing the Cu metallic interlayer thickness. The dispersion energy E d and the single-oscillator energy E o were determined using a WDD single oscillator model.

show abstract

Sol-gel-derived ZnO/Cu/ZnO multilayer thin films and their optical and electrical properties

Cited by 12 publications

References 27 publications

Influence of Annealing Temperature on Optical Properties of Sandwiched ZnO/Metal/ZnO Transparent Conductive Thin Films

Influence of Annealing Temperature on Optical Properties of Sandwiched ZnO/Metal/ZnO Transparent Conductive Thin Films

Study the Effect of ZnO/Cu/ZnO Multilayer Structure by RF Magnetron Sputtering For Flexible Display Applications

Effect of Cu Metallic Interlayer Thickness on Optoelectronic Properties of TiO2-Based Multilayers Deposited by DC Pulsed Magnetron Sputtering

Contact Info

Product

Resources

About