AlZnSnO (AZTO) thin-film transistors (TFTs) were fabricated using an approach based on solution deposition and spin coating. The effects of metal alloy reaction temperatures ranging from 180 to 250 8C were investigated on the chemical stability and electronic characteristics of solution-based AZTO TFTs of heat treatment temperatures from 180 to 250 8C. Small differences in temperature during the metal alloy reaction lead to large changes in electrical properties. This study shows that the electrical performance and the chemical stability of AZTO channels are improved at the expense of one another, as a function of the metal alloy heat treatment temperature.