Sol–gel polishing technology for extremely hard semiconductor substrates

Luo, Qiufa; Wen, Hailang; Lu, Jing

doi:10.1007/s00170-022-08771-7

Cited by 11 publications

(6 citation statements)

References 63 publications

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“…Although the hard and brittle properties and chemical inertness of SiC limit the efficiency of the CMP process, this method is still used for polishing SiC wafers in the finishing stage because of its global flatness and ultra-smooth surface [22,23]. The schematic diagram of CMP is shown in figure 1.…”

Section: Cmp Principlementioning

confidence: 99%

Process optimization of 4H-SiC chemical mechanical polishing based on grey relational analysis

Ban

Duan

Tian

et al. 2023

Semicond. Sci. Technol.

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Ultra-smooth and low-damage processing of single-crystalline 4H-SiC has become a research focus as a substrate for third-generation semiconductor wafers. However, the high hardness and strong chemical inertia significantly affect 4H-SiC chemical-mechanical polishing (CMP) efficiency and accuracy. In this study, polishing process optimization experiments of 4H-SiC are conducted based on the grey relational analysis method to achieve low surface roughness (Ra) and high material removal rate (MRR). First, MRR and Ra of Si surface (0001) are obtained by orthogonal experiments considering down force, rotation speed, slurry flow rate and abrasive particle size as four key factors. Then the grey relational coefficient and grey relational grade of MRR and Ra are calculated by data processing. The results show that significant factors of the single-objective process are rotation speed, down force, particle size, and flow rate, while the factors of the multi-objective process are down force, flow rate, rotation speed, and particle size in turn. Finally, the MRR of 208.12 nm/h and Ra of 0.391 nm are polished using multi-objective optimization process parameters. The polishing efficiency and accuracy were improved, confirming the applicability of grey relational analysis in CMP.

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Section: Cmp Principlementioning

confidence: 99%

Process optimization of 4H-SiC chemical mechanical polishing based on grey relational analysis

Ban

Duan

Tian

et al. 2023

Semicond. Sci. Technol.

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“…As shown in Figure 14, fixed-abrasive polishing (FAP) can improve the utilization efficiency of the abrasives by fixing the abrasives on the polishing pad through hot-pressing consolidation, UV curing, or sol-gel technology. [108] The resinbonded ultra-fine diamond abrasive polishing pad was prepared and c) schematic diagram of improvement mechanism of mixed abrasive slurry, in which the graphene oxide nanosheet promotes free radical generation and reduces diamond grinding induced scratches. Reproduced with permission.…”

Section: Fixed or Semi-fixed Abrasivementioning

confidence: 99%

“…As shown in Figure , fixed‐abrasive polishing (FAP) can improve the utilization efficiency of the abrasives by fixing the abrasives on the polishing pad through hot‐pressing consolidation, UV curing, or sol–gel technology. [ 108 ] The resin‐bonded ultra‐fine diamond abrasive polishing pad was prepared by electrophoretic co‐deposition process, with which the Ra dropped from 90.3 to 4.3 nm after polishing the Si‐face of SiC wafers in 1 h. [ 109 ] In another study, the MRR increased from 450 nm h −1 to 1.08 µm h −1 when replacing the polyurethane pad with a fixed‐diamond‐abrasive pad. [ 110 ] The FAP process can also achieve chemical efficiency enhancement during the CMP of SiC wafers by immobilizing various materials.…”

Section: Status and Challenges Of The Chemical–mechanical Polishing (...mentioning

confidence: 99%

Chemical–Mechanical Polishing of 4H Silicon Carbide Wafers

Wang

et al. 2023

Adv Materials Inter

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Abstract4H silicon carbide (4H‐SiC) holds great promise for high‐power and high‐frequency electronics, in which high‐quality 4H‐SiC wafers with both global and local planarization are cornerstones. Chemical–mechanical polishing (CMP) is the key processing technology in the planarization of 4H‐SiC wafers. Enhancing the performance of CMP is critical to improving the surface quality and reducing the processing cost of 4H‐SiC wafers. In this review, the superior properties of 4H‐SiC and the processing of 4H‐SiC wafers are introduced. The development of CMP with chemical, mechanical, and chemical–mechanical synergistic approaches to improve the performance of CMP is systematically reviewed. The basic principle and processing system of each improvement approach are presented. By comparing the material removal rate of CMP and the surface roughness of CMP‐treated 4H‐SiC wafers, the prospect on the chemical, mechanical, and chemical–mechanical synergistic improvement approaches is finally provided.

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“…Following a similar concept, in 2022, Luo at el. proposed that the semi-fixed SG CMP pad based on SiO 2 -modified diamonds, which are considered as soft–hard mixed abrasives, can further reduce the surface damage of the SiC substrate [ 20 ].…”

Section: Various Sic Cmp Technologiesmentioning

confidence: 99%

Recent Advances In Silicon Carbide Chemical Mechanical Polishing Technologies

et al. 2022

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Chemical mechanical polishing (CMP) is a well-known technology that can produce surfaces with outstanding global planarization without subsurface damage. A good CMP process for Silicon Carbide (SiC) requires a balanced interaction between SiC surface oxidation and the oxide layer removal. The oxidants in the CMP slurry control the surface oxidation efficiency, while the polishing mechanical force comes from the abrasive particles in the CMP slurry and the pad asperity, which is attributed to the unique pad structure and diamond conditioning. To date, to obtain a high-quality as-CMP SiC wafer, the material removal rate (MRR) of SiC is only a few micrometers per hour, which leads to significantly high operation costs. In comparison, conventional Si CMP has the MRR of a few micrometers per minute. To increase the MRR, improving the oxidation efficiency of SiC is essential. The higher oxidation efficiency enables the higher mechanical forces, leading to a higher MRR with better surface quality. However, the disparity on the Si-face and C-face surfaces of 4H- or 6H-SiC wafers greatly increases the CMP design complexity. On the other hand, integrating hybrid energies into the CMP system has proven to be an effective approach to enhance oxidation efficiency. In this review paper, the SiC wafering steps and their purposes are discussed. A comparison among the three configurations of SiC CMP currently used in the industry is made. Moreover, recent advances in CMP and hybrid CMP technologies, such as Tribo-CMP, electro-CMP (ECMP), Fenton-ECMP, ultrasonic-ECMP, photocatalytic CMP (PCMP), sulfate-PCMP, gas-PCMP and Fenton-PCMP are reviewed, with emphasis on their oxidation behaviors and polishing performance. Finally, we raise the importance of post-CMP cleaning and make a summary of the various SiC CMP technologies discussed in this work.

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Sol–gel polishing technology for extremely hard semiconductor substrates

Cited by 11 publications

References 63 publications

Process optimization of 4H-SiC chemical mechanical polishing based on grey relational analysis

Process optimization of 4H-SiC chemical mechanical polishing based on grey relational analysis

Chemical–Mechanical Polishing of 4H Silicon Carbide Wafers

Recent Advances In Silicon Carbide Chemical Mechanical Polishing Technologies

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