2019
DOI: 10.1063/1.5089356
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Sol gel preparation methods for barium strontium titanate based solar devices

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“…Barium strontium titanate (Ba 0.5 Sr 0.5 TiO 3 ) has high relative permittivity hence it is a good candidate for insulator material and can enhance specific capacitance (capacitance per unit mass) of MIM capacitor. Ba 0.5 Sr 0.5 TiO 3 is a solid solution of barium titanate (BaTiO 3 ) and strontium titanate (SrTiO 3 ) and can be synthesized by many techniques such as hydrothermal [1,2], solid-state reaction [3,4], spray pyrolysis [5], sol-gel [6][7][8], RF magnetron sputtering [9,10] and so on. Ba 0.5 Sr 0.5 TiO 3 is ferroelectric material having high dielectric constant, high breakdown field strength, low dielectric loss, pyroelectric properties, ferroelectricity and thermal stability and hence it is suitable for applications in ferroelectric random access memories (FRAM), multi-layer ceramic capacitors, tunable filters, microwave phase shifters, opto-electronic device, sensors [11][12][13][14][15][16].…”
Section: Introductionmentioning
confidence: 99%
“…Barium strontium titanate (Ba 0.5 Sr 0.5 TiO 3 ) has high relative permittivity hence it is a good candidate for insulator material and can enhance specific capacitance (capacitance per unit mass) of MIM capacitor. Ba 0.5 Sr 0.5 TiO 3 is a solid solution of barium titanate (BaTiO 3 ) and strontium titanate (SrTiO 3 ) and can be synthesized by many techniques such as hydrothermal [1,2], solid-state reaction [3,4], spray pyrolysis [5], sol-gel [6][7][8], RF magnetron sputtering [9,10] and so on. Ba 0.5 Sr 0.5 TiO 3 is ferroelectric material having high dielectric constant, high breakdown field strength, low dielectric loss, pyroelectric properties, ferroelectricity and thermal stability and hence it is suitable for applications in ferroelectric random access memories (FRAM), multi-layer ceramic capacitors, tunable filters, microwave phase shifters, opto-electronic device, sensors [11][12][13][14][15][16].…”
Section: Introductionmentioning
confidence: 99%
“…This compound has been extensively applied in large-scale dynamic random memory, non-volatile ferroelectric memory, tunable microwave device, pyroelectric detector and in many crucial optical components [4][5][6][7][8]. Up to now, four common pathways including magnetron sputtering [9][10][11], sol-gel [12][13][14], pulsed laser deposition (PLD) [15,16] and metal-organic chemical vapour deposition (MOCVD) [17,18] are disclosed to prepare the BST films. Although these methods have their distinctive advantages and characteristics, they suffer from different drawbacks that hamper the large-scale commercial applications of BST films.…”
Section: Introductionmentioning
confidence: 99%