“…Okimura et al [6] prepared Cu 2-x Se-Si junction by conventional vacuum evaporation method and reported that the conversion efficiency of the junction is about 8.3 and 8.8 % for 3-and 2-mm-diameter Cu 2-x Se layer, respectively. Several chemical and physical methods such as chemical bath [2,[7][8][9][10][11], aerosol-assisted chemical vapor deposition [12,13], electroless [14], solgel [15], electrochemical deposition [16], electrophoretic deposition [17], brush electroplate deposition [18], cathodic deposition [19], dip coating [20], spray pyrolysis [21], vacuum co-evaporation [22], vacuum evaporation [6,23], pulsed laser deposition [4,24], selenization [25], magnetron sputtering [26], flash evaporation [27] and reactive evaporation [28] methods have been employed to deposit copper selenide thin films. Ting and Lee [17] prepared Cu 2-x Se nanocrystals by one-pot solution-phase method.…”