Sol–gel versus sputtering indium tin oxide films as transparent conducting oxide materials

Duta, M.; Anastasescu, Mihai; Calderón-Moreno, José Maria; Predoană, Luminița; Preda, Silviu; Nicolescu, M.; Stroescu, Hermine; Brătan, Veronica; Dascalu, Izabella; Aperathitis, E.; Modreanu, M.; Zaharescu, Maria; Gärtner, M.

doi:10.1007/s10854-016-4375-y

Cited by 29 publications

(22 citation statements)

References 28 publications

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“…The optical functions of ITO were described using a general oscillator model with an extended Drude model (EDM) used to correct classic Drude approximation for band-to-band transitions in the UV range, which is a combination of Lorentz-type oscillators [5].…”

Section: Optical Propertiesmentioning

confidence: 99%

“…ITO is widely used as a transparent electrode in a variety of optoelectronic devices, such as light-emitting diodes (LEDs) [3], top emitting VCSELs [4], liquid crystal displays (LCDs) [5], and as a transparent electrode for solar cell applications [6,7]. Several deposition techniques are commonly used to prepare ITO thin films with high transmittance and low resistivity, such as chemical vapor deposition [8], spray pyrolysis [9], radio frequency plasma enhanced reactive thermal evaporation (rf-PERTE) [10], sol gel [11], activated reactive evaporation (ARE) [4], electron beam evaporation [1][2], DC and RF magnetron sputtering [10][11][12].…”

Section: Introductionmentioning

confidence: 99%

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Effect of the Annealing Gas and RF Power Sputtering in the Electrical, Structural and Optical Properties of ITO Thin Films

Boussoum¹,

Belkaid²,

Renard³

et al. 2019

J. Nano- Electron. Phys.

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In the paper we propose to investigate the effect of the annealing gas and RF power sputtering on the electrical, structural and optical properties of indium tin oxide thin films for solar cells applications. These thin films were prepared on lightly doped silicon wafer by RF sputtering in Ar environment at room temperature and with a pressure of 8•10-3 mbar. Process parameters such as RF power and post deposition annealing were varied in order to determine their dependence on electrical, structural and optical properties of ITO thin films. Layer morphology and thickness measurements (with cross section) were investigated by scanning electron microscopy, and atomic force microscopy was performed to determine the surface roughness. The dependence of the resistivity, mobility and carrier concentration of these films by varying RF power and thermal annealing were studied by Hall Effect measurement. Spectroscopic ellipsometry was also used to determine the refractive index, thickness, roughness, porosity and optical bandgap of the films. Thus, the optical transmittance in the visible region was found to be above 85 %, the low resistivity and high mobility were found 2.09 10-4 Ω•сm and 35.81 cm 2 /(V•s), respectively, for 200 nm thickness for the sample elaborated with a RF power of 150 W and an annealing at 400 °C for 10 min with rapid thermal annealing under N2. The X-ray diffraction patterns of the thin films indicated a preferred orientation along the (222) plane, which provides a high degree of crystallinity for all N2 annealed samples. The XPS was used to determine oxidation states and identify the elemental content in the films. Obtained results for the surface morphology, electrical and optical properties of the ITO thin film details will be presented.

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Section: Optical Propertiesmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Effect of the Annealing Gas and RF Power Sputtering in the Electrical, Structural and Optical Properties of ITO Thin Films

Boussoum¹,

Belkaid²,

Renard³

et al. 2019

J. Nano- Electron. Phys.

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“…40 For GOCNT lms with high T, their FOM is lower than that of lms with lower T. The FOM of the lms ranges from 2 to 5, which is much lower than the value for a rigid transparent conducting glass, such as indium tin oxide coated glass (normally about 150). 44 There are a number of explanations for the low recorded FOM values, such as the limited length of the CNTs (about 1 mm) and the low quantity of junctions in the thin lms. 5 But the FOM values are similar to the best CNT lms used in CNT/Si heterojunction solar cells.…”

Section: Device Preparation and Characterizationmentioning

confidence: 99%

Application of a hole transporting organic interlayer in graphene oxide/single walled carbon nanotube–silicon heterojunction solar cells

Batmunkh

Grace

et al. 2017

J. Mater. Chem. A

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“…Various deposition techniques have been used to produce oxide-metal-oxide structures, including thermal evaporation [24], electron beam evaporation [25], spray pyrolysis [26], sol-gel methods [27], ion beam sputtering [28], and magnetron sputtering [18][19][20]28]. Low-cost wet chemical methods are usually the starting point and benchmark for most academic and industrial processes that require a thin and uniform coating, but the transparent electrodes obtained by these techniques have resulted in inferior electrical features compared with those deposited by ion plasma methods [25,29,30]. In this sense, it appears that DC magnetron sputtering is the most promising technique in terms of the industrial deposition of uniform films at a proper deposition rate [18].…”

Section: Introductionmentioning

confidence: 99%

Low-Temperature Fabrication of High-Performance and Stable GZO/Ag/GZO Multilayer Structures for Transparent Electrode Applications

et al. 2020

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Presently, research and development of indium-free stable highly transparent conductive (TC) materials is of paramount importance for the blooming world of information display systems and solar energy conversion. Development of devices based on flexible organic substrates further narrows the choice of possible TC materials due to the need for lower deposition and process temperatures. In our work, the structural, electrical, and optical performances of Ga-doped ZnO/Ag/Ga-doped ZnO (GZO/Ag/GZO) multilayered structures deposited on glass substrates by direct current (DC) magnetron sputtering in a pure Ar medium without any purposeful substrate heating have been investigated. The highest figure of merit achieved was 5.15 × 10−2 Ω−1 for the symmetric GZO/Ag/GZO multilayer, featuring GZO and Ag thicknesses of 40 and 10 nm, respectively, while the average optical transmittance was over 81% in the visible range of wavelengths and the resistivity was 2.2 × 10−5 Ω·cm. Additionally, the good durability of the performances of the multilayer structures was demonstrated by their testing in the context of long-term storage (over 500 days) in standard environmental conditions.

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Sol–gel versus sputtering indium tin oxide films as transparent conducting oxide materials

Cited by 29 publications

References 28 publications

Effect of the Annealing Gas and RF Power Sputtering in the Electrical, Structural and Optical Properties of ITO Thin Films

Effect of the Annealing Gas and RF Power Sputtering in the Electrical, Structural and Optical Properties of ITO Thin Films

Application of a hole transporting organic interlayer in graphene oxide/single walled carbon nanotube–silicon heterojunction solar cells

Low-Temperature Fabrication of High-Performance and Stable GZO/Ag/GZO Multilayer Structures for Transparent Electrode Applications

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