Solar-blind AlGaN-based p-i-n photodetectors with high breakdown voltage and detectivity

Tut, Turgut; Yelboğa, Tolga; Ulker, Erkin; Özbay, Ekmel

doi:10.1063/1.2895643

Cited by 113 publications

(71 citation statements)

References 19 publications

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“…Thus, the PDs are desired to have both large detector area and low dark current, which are nevertheless hard to be realised simultaneously. In past studies, small-area AlGaN-based solar-blind PDs with low dark current density and high signal-to-noise ratio have been reported [2][3][4][5]. Although there are limited reports on AlGaN-based solar-blind Schottky PDs with active area of more than 1 mm 2 , those devices suffer from high leakage current owing to material quality or uniformity-related issues [6].…”

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confidence: 98%

Large-area solar-blind AlGaN-based MSM photodetectors with ultra-low dark current

Xie

Chen

et al. 2011

Electron. Lett.

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Large-area metal -semiconductor -metal (MSM) solar-blind photodetectors with a device area of 5 × 5 mm 2 have been fabricated on Al 0.4 Ga 0.6 N/AlN/sapphire epistructure. The photodetector exhibits ultra-low dark current density of 3.2 × 10 212 A/cm 2 under 20 V bias and a corresponding breakdown voltage of up to 385 V. The solar-blind/ultraviolet rejection ratio of the photodetector is more than four orders of magnitude with a maximum quantum efficiency of 28% at 275 nm.Introduction: Wide bandgap AlGaN-based materials are especially suitable for detecting ultraviolet (UV) radiation owing to their tunable bandgap (3.4 -6.2 eV), good thermal conductivity, excellent radiation hardness and high breakdown electric field. Solar-blind AlGaN-based UV photodetectors (PDs) with cutoff wavelength smaller than 280 nm have important potential applications, including missile plume sensing, chemical/biological agent detection, solar astronomy and covert space-to-space communications [1]. For many of these applications, capability of detecting very weak UV signals is often required. Thus, the PDs are desired to have both large detector area and low dark current, which are nevertheless hard to be realised simultaneously. In past studies, small-area AlGaN-based solar-blind PDs with low dark current density and high signal-to-noise ratio have been reported [2][3][4][5]. Although there are limited reports on AlGaN-based solar-blind Schottky PDs with active area of more than 1 mm 2 , those devices suffer from high leakage current owing to material quality or uniformity-related issues [6]. In this work, by growing the AlGaN active layer on a high-temperature (HT) AlN buffer layer on sapphire, we demonstrate a high-performance AlGaN-based metal -semiconductor -metal (MSM) PD with large device area of up to 25 mm 2 , which exhibits record low dark current density and high solar-blind/ultraviolet rejection ratio.

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confidence: 98%

Large-area solar-blind AlGaN-based MSM photodetectors with ultra-low dark current

Xie

Chen

et al. 2011

Electron. Lett.

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“…The direct bandgap AlGaN material is tunable from its binary alloy from 3.4 eV (GaN) to 6.2 eV (AlN) at room temperature enables the wide spectrum coverage from blue to UVC. [97][98][99][100][101]114,115) The past 20 years have witnessed the improvement in AlGaN based PDs with different device configurations of metalsemiconductor-metal (MSM), PN heterostructure, PIN, and Schottky diodes. 90,94) The bandwidth can reach GHz range.…”

Section: Detectorsmentioning

confidence: 99%

“…Table II summarizes the performance of semiconductor based solar-blind PDs. 88,[96][97][98][99][100][101][102][103][104][105][106][107][108][109][110][111][112][113] The table is ordered by the use of different groups of materials. As indicated in the table, III-nitride based PDs are among the first and ideal choices for high efficiency and high-speed devices.…”

Section: Detectorsmentioning

confidence: 99%

Light based underwater wireless communications

Oubei

Shen

Kammoun

et al. 2018

Jpn. J. Appl. Phys.

121

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Underwater wireless optical communication (UWOC) is a wireless communication technology that uses visible light to transmit data in underwater environment. Compared to radio-frequency (RF) and acoustic underwater techniques, UWOC has many advantages including large information bandwidth, unlicensed spectrum and low power requirements. This review paper provides an overview of the latest UWOC research. Additionally, we present a detailed description of transmitter and receiver technologies which are key components of UWOC systems. Moreover, studies investigating underwater optical channel models for both simple attenuation and the impact of turbulence including air bubbles and inhomogeneous salinity and temperature are also described. Future research challenges are identified and outlined.

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“…Recent researches on AlGaN SBDs have demonstrated encouraging results in terms of low dark current, high response speed and high detectivity in the Schottky barrier, 1 Schottky based metal-semiconductor-metal, 2 and p-i-n type photodiodes. 3,4 However, in order to replace the current market-dominant photomultiplier tubes, AlGaN-based SBDs must have high internal gain combined with low dark current and high response speed. Due to their high photocurrent gain and low dark current, photomultiplier tubes are sensitive enough to detect very weak solar-blind UV signal and are commonly used today.…”

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confidence: 99%

AlGaN solar-blind avalanche photodiodes with high multiplication gain

Sun

Chen

et al. 2010

Applied Physics Letters

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We report the fabrication and characterization of the solar-blind AlGaN avalanche photodiodes grown by metal-organic chemical vapor deposition on c-plane sapphire substrate. The fabricated devices with 100 μm diameter active area exhibit a peak responsivity of 79.8 mA/W at 270 nm and zero bias, corresponding to an external quantum efficiency of 37%. Multiplication gains as high as more than 2500 were obtained in these devices.

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Solar-blind AlGaN-based p-i-n photodetectors with high breakdown voltage and detectivity

Abstract: High-performance metal-semiconductor-metal deep-ultraviolet photodetectors based on homoepitaxial diamond thin film

Cited by 113 publications

References 19 publications

Large-area solar-blind AlGaN-based MSM photodetectors with ultra-low dark current

Large-area solar-blind AlGaN-based MSM photodetectors with ultra-low dark current

Light based underwater wireless communications

AlGaN solar-blind avalanche photodiodes with high multiplication gain

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