Solar cell efficiency tables (Version 55)

Green, Martin A.; Dunlop, Ewan D.; Hohl‐Ebinger, Jochen; Yoshita, Masahiro; Kopidakis, Nikos; Ho‐Baillie, Anita

doi:10.1002/pip.3228

Cited by 758 publications

(562 citation statements)

References 41 publications

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“…[ 42 ] Furthermore, a FF of 82% compares well to the best value (82.3%) obtained by traditional Si solar cells. [ 43 ] We speculate that this high FF is related to the CNTs themselves, having a high carrier mobility [ 44 ] and an appropriate band alignment with silicon. For the large area (245.71 cm 2 ) solar cells a PCE of 20.1% was obtained.…”

Section: Resultsmentioning

confidence: 99%

A Polymer/Carbon‐Nanotube Ink as a Boron‐Dopant/Inorganic‐Passivation Free Carrier Selective Contact for Silicon Solar Cells with over 21% Efficiency

Chen

Wan

et al. 2020

Adv Funct Materials

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Traditional silicon solar cells extract holes and achieve interface passivation with the use of a boron dopant and dielectric thin films such as silicon oxide or hydrogenated amorphous silicon. Without these two key components, few technologies have realized power conversion efficiencies above 20%. Here, a carbon nanotube ink is spin coated directly onto a silicon wafer to serve simultaneously as a hole extraction layer, but also to passivate interfacial defects. This enables a low‐cost fabrication process that is absent of vacuum equipment and high‐temperatures. Power conversion efficiencies of 21.4% on an device area of 4.8 cm2 and 20% on an industrial size (245.71 cm2) wafer are obtained. Additionally, the high quality of this passivated carrier selective contact affords a fill factor of 82%, which is a record for silicon solar cells with dopant‐free contacts. The combination of low‐dimensional materials with an organic passivation is a new strategy to high performance photovoltaics.

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Section: Resultsmentioning

confidence: 99%

A Polymer/Carbon‐Nanotube Ink as a Boron‐Dopant/Inorganic‐Passivation Free Carrier Selective Contact for Silicon Solar Cells with over 21% Efficiency

Chen

Wan

et al. 2020

Adv Funct Materials

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show abstract

“…PCE which was 3.8% for the first cell reported in 2009 1 has improved rapidly to the highest reported values of over 21%. 2 However, there are considerable difficulties in reliable measurements of PCE for PSCs that is a serious concern for fair and accurate tracking of advancement in PSC technologies. These considerable difficulties are thought to result from slow current response to the applied voltage and change in electrical properties with light irradiation.…”

Section: Introductionmentioning

confidence: 99%

Development of a New Maximum Power Point Tracking Method for Power Conversion Efficiency Measurement of Metastable Perovskite Solar Cells

et al. 2020

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A new algorithm for the maximum power point tracking (MPPT) method has been developed in order to determine the maximum power (P max) for slow-responding metastable PV devices such as perovskite solar cells (PSCs). It is well known that such devices often cause significant P max oscillation during a standard MPPT measurement. This oscillation was found to occur caused by difference in the current acquired after increasing the voltage and that acquired after decreasing the voltage. The new algorithm developed in this paper has eliminated such oscillation with comparison between the powers at different voltages after changing the voltage in the same direction. P max data determined by using this algorithm were found to be reliable by comparing with those determined by the dynamic I-V measurements.

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“…GaInP/GaInAs/Ge lattice-matched triple-junction solar cells have been widely used in space photovoltaic applications and have attained the highest efficiency over 30% [1,2]. The heavy radiation bombardment with various energetic particles in a space environment will inevitably damage the solar cells and result in additional non-radiative recombination centers, which reduces the minority carrier diffusion length and leads to degradation of the solar cell efficiency [3].…”

Section: Introductionmentioning

confidence: 99%

Improving Radiation Resistance of GaInP/GaInAs/Ge Triple-Junction Solar Cells Using GaInP Back-Surface Field in the Middle Subcell

Gao

Yang

Zhang³

2020

Materials

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This paper studies the radiation resistance for GaInP/GaInAs/Ge triple-junction space solar cells with a GaInP back-surface field (BSF) in the GaInAs middle subcell compared with those with an AlGaAs BSF. The results show that the initial electrical performance is almost the same for both of them. However, the radiation resistance of the GaInP BSF cell was improved. After irradiation by 1 MeV electron beam with a cumulative dose of 1015 e/cm2, the Jsc declined by 4.73% and 6.61% for the GaInP BSF cell and the AlGaAs BSF cell, respectively; the efficiency degradation was 13.64% and 14.61% for the GaInP BSF cell and the AlGaAs BSF cell, respectively, leading to a reduced degradation level of 6%. The mechanism for GaInP BSF to improve the radiation resistance of GaInP/GaInAs/Ge triple-junction solar cells is also discussed in this work. Similar results were obtained when irradiation cumulative doses varied from 1 × 1014 e/cm2 to 1 × 1016 e/cm2.

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Solar cell efficiency tables (Version 55)

Abstract: Consolidated tables showing an extensive listing of the highest independently confirmed efficiencies for solar cells and modules are presented. Guidelines for inclusion of results into these tables are outlined, and new entries since July 2019 are reviewed.

Cited by 758 publications

References 41 publications

A Polymer/Carbon‐Nanotube Ink as a Boron‐Dopant/Inorganic‐Passivation Free Carrier Selective Contact for Silicon Solar Cells with over 21% Efficiency

A Polymer/Carbon‐Nanotube Ink as a Boron‐Dopant/Inorganic‐Passivation Free Carrier Selective Contact for Silicon Solar Cells with over 21% Efficiency

Development of a New Maximum Power Point Tracking Method for Power Conversion Efficiency Measurement of Metastable Perovskite Solar Cells

Improving Radiation Resistance of GaInP/GaInAs/Ge Triple-Junction Solar Cells Using GaInP Back-Surface Field in the Middle Subcell

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