Solar cells and high efficiency photo-diodes having metal-organic thin film-semiconductor structures

Al-Mohamad, Ali; Soukieh, M.

doi:10.1016/0040-6090(95)06904-6

Cited by 22 publications

(11 citation statements)

References 9 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…A band gap of CuPc was equal to 1.6 eV and a conductivity was equal to 5×10 −13 Ω −1 cm at T=300 K [5,6] . The sublimation temperature varies from 400℃ at a pressure from 10 −4 Pa to 580℃ at 10 −4 Pa [19] . Thicknesses of the CuPc films were measured by optical method, based on absorbance technique, using the following formula [9] :…”

Section: Methodsmentioning

confidence: 99%

Low temperature properties of organic-inorganic Ag/p-CuPc/n-GaAs/Ag photoelectric sensor

Каримов

Qazi

Khan

et al. 2008

Sci. China Ser. E-Technol. Sci.

View full text Add to dashboard Cite

A thin organic film of p-type semiconducting copper phthalocynanine (CuPc) was deposited by vacuum evaporation on an n-type GaAs single-crystal semiconductor substrate. The fabricated Ag/p-CuPc/n-GaAs/Ag sensor was carried through an ageing process to stabilize the parameters. Voltage-current characteristics and photoelectrical response of the sensor were investigated at a wide temperature range of 82 to 350 K. Photoelectric characteristics were measured under nonmodulated filament-lamp illumination. It was observed that such sensor parameters as rectification ratio, threshold voltage, junction, shunt and series resistances, open-circuit voltage and short circuit current are temperature-dependent. It was found that wide-range voltage-current characteristics of the sensor may be described similarly to that of a Schottky barrier diode. Using the experimental data on voltage-current characteristics and absorbance of the CuPc films, the energy-band diagram of the p-CuPc/n-GaAs heterojunction was developed. It was shown that data obtained from simulation of an equivalent circuit of photoelectric sensor agreed with experimental results. organic solar cell, organic-inorganic heterojunction, temperature dependent I-V characteristics

show abstract

Section: Methodsmentioning

confidence: 99%

Low temperature properties of organic-inorganic Ag/p-CuPc/n-GaAs/Ag photoelectric sensor

Каримов

Qazi

Khan

et al. 2008

Sci. China Ser. E-Technol. Sci.

View full text Add to dashboard Cite

show abstract

“…The molecular weight of the CuPc molecule is 576 a.m.u. Sublimation temperatures varies from 400°C at a pressure of 10-4 Pa to 580°C at 10-4 Pa [12]. and dried in spirit's vapor.…”

Section: Methodsmentioning

confidence: 99%

Low Temperature Properties of Organic-Inorganic Ag / p-CuPc/ n-GaAs / Ag Photoelectric Sensor

Karimova¹,

Qazi

Fedorov

et al. 2006

2006 IEEE International Multitopic Conference

View full text Add to dashboard Cite

A thin organic film of p-type semiconducting copper phthalocynanine (CuPc) was deposited by vacuum evaporation on an n-type GaAs single-crystal semiconductor substrate. The Fabricated Ag/CuPc/n-GaAs/Ag sensor was carried through an ageing process to stabilize the parameters. Voltage-current characteristics and photoelectrical response of the sensor were investigated at a wide temperature interval of 82 K to 350 K. Photoelectric characteristics were measured under nonmodulated filament-lamp illumination. It was observed that sensor parameters such as: rectification ratio; threshold voltage; junction, shunt and series resistances; open-circuit voltage and short circuit current are temperature dependent. It was found that wide-range voltage-current characteristics of the sensor may be described similar to that of a Schottky barrier diode. Using the experimental data on voltage-current characteristics and absorbance of the CuPc films the energy-band diagram of the pCuPc/n-GaAs heterojunction was developed. It was shown that data obtained from simulation of an equivalent circuit of photoelectric sensor agreed with experimental results.

show abstract

“…Ibrahim et al [12] have reported on the optical and electrical properties of chromon derivatives (CMOCPP) and concluded that the suitability of these structures as an optical sensor for optoelectronic applications. These structures also characterized by the main characteristics of most organic semiconductors, suitable for applications, such as low cost, simplicity of fabrication of large areas, stability and reproducibility and their interesting optical and electronic characteristics [14]. Furthermore, this type of materials are characterized by high chemical and thermal stability as well as high suitability, efficiency and delectability [15] valid for photodiode applications.…”

Section: Introductionmentioning

confidence: 99%

Synthesis, optical and photoelectrical characterizations of the novel 10-chloro-6H,8H-dichromeno[2,3-b:3′,4′-e]pyridine-6,8-dione (CDPD) and its photodiode application

et al. 2016

View full text Add to dashboard Cite

Solar cells and high efficiency photo-diodes having metal-organic thin film-semiconductor structures

Cited by 22 publications

References 9 publications

Low temperature properties of organic-inorganic Ag/p-CuPc/n-GaAs/Ag photoelectric sensor

Low temperature properties of organic-inorganic Ag/p-CuPc/n-GaAs/Ag photoelectric sensor

Low Temperature Properties of Organic-Inorganic Ag / p-CuPc/ n-GaAs / Ag Photoelectric Sensor

Synthesis, optical and photoelectrical characterizations of the novel 10-chloro-6H,8H-dichromeno[2,3-b:3′,4′-e]pyridine-6,8-dione (CDPD) and its photodiode application

Contact Info

Product

Resources

About