2018
DOI: 10.1016/j.apsusc.2017.07.290
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Solar photocatalytic water oxidation over Ag 3 PO 4 /g-C 3 N 4 composite materials mediated by metallic Ag and graphene

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Cited by 91 publications
(18 citation statements)
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“…7a). The photocurrent of the PCN electrode was obviously larger than that of CN, indicating that the electron-hole pair separation efficiency was improved in protonated carbon nitride [61]. Moreover, the composite PCN-20 demonstrated the highest photocurrent intensity, possibly because the surface recombination of the photoinduced electrons and holes was significantly suppressed by the 2D MXene nanosheets with high electrical mobility.…”
Section: Resultsmentioning
confidence: 98%
“…7a). The photocurrent of the PCN electrode was obviously larger than that of CN, indicating that the electron-hole pair separation efficiency was improved in protonated carbon nitride [61]. Moreover, the composite PCN-20 demonstrated the highest photocurrent intensity, possibly because the surface recombination of the photoinduced electrons and holes was significantly suppressed by the 2D MXene nanosheets with high electrical mobility.…”
Section: Resultsmentioning
confidence: 98%
“…The samples of Ag 3 PO 4 (SP) and defect-Ag/Ag 3 PO 4 (DMSP) showed the structure of a body-centered cubic (JCPDS No. 06-0505) [16] (Fig. 1(a)).…”
Section: Synthesis and Characterizationmentioning
confidence: 99%
“…To this end, the construction of semiconductor‐based composite photocatalysts presents a promising approach to facilitate the separation and transfer of photogenerated electrons and holes, where the narrow bandgap semiconductors, noble metals, and carbonaceous materials usually serve as electron acceptor or conductor. [ 163–167 ] Generally, narrow bandgap semiconductor can absorb the major parts of sunlight and generate more electrons. However, the lower CB position of most narrow bandgap semiconductors considerably diminishes their ability to transfer the photogenerated electrons to targeted acceptor and simultaneously weakens their reduction functionality.…”
Section: D Graphene‐based Composites For Photocatalytic Hermentioning
confidence: 99%
“…To effectively suppress the rapid recombination of photogenerated charge carriers on the semiconductor surface, the capture rate of photogenerated charge carriers must be promoted. To this end, the construction of semiconductor‐based composite photocatalysts presents a promising approach to facilitate the separation and transfer of photogenerated electrons and holes, where the narrow bandgap semiconductors, noble metals, and carbonaceous materials usually serve as electron acceptor or conductor 163–167. Generally, narrow bandgap semiconductor can absorb the major parts of sunlight and generate more electrons.…”
Section: D Graphene‐based Composites For Photocatalytic Hermentioning
confidence: 99%