Solid-immersion-lens-enhanced nonlinear frequency-variation mapping of a silicon integrated-circuit

Abstract

By inducing two-photon absorption within the active layer of a proprietary silicon test chip, we demonstrate here solid-immersion-lens-enhanced nonlinear frequency-variation mapping of a 500-MHz ring oscillator circuit at 1560 nm. This work compares the performance of conventional single-photon linear methodologies against advanced two-photon alternatives and reports a maximum laser-induced change in the oscillator stage-delay of approximately 1 ps, and a signal injection resolution of 260 nm.

Two-photon laser-assisted device alteration in CMOS integrated circuits using linearly, circularly and radially polarized light

“…We concentrate here on LADA, which is a well-established imaging/analysis technique used to isolate interaction sites of timing-critical transistors [7]. In its original form, LADA employed a continuous wave (CW) laser and therefore provided no detailed temporal information [8], however we recently showed how this limitation can be overcome by using two-photon absorption (TPA) induced by an infrared femtosecond laser [9].…”