Solid–liquid interdiffusion bonding between In-coated silver thick films

Lin, Jiaping; Huang, Long Wei; Jang, Guh Yaw; Lee, Sheng Long

doi:10.1016/s0040-6090(02)00240-7

Cited by 39 publications

(30 citation statements)

References 8 publications

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“…Through this method, low-temperature bonding process can be achieved by depositing highmelting-point metal and low-melting-point solder at bonding areas. After bonding, the joint would only contain high-melting-point intermetallic compounds and hence it can withstand high temperature during the subsequent reflowing process, which can reduce the risk of thermal mismatch problems [5][6][7][8].…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Phase transformation and fracture behavior of Cu/In/Cu joints formed by solid–liquid interdiffusion bonding

Tian

Hang

Zhao

et al. 2014

J Mater Sci: Mater Electron

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Section: Introductionmentioning

confidence: 99%

“…Lin et al [8] have studied shear properties of Ag-In interconnections. It was found that the solder joints with 3 lm-in-thickness had better shear strengths compared with solder joints with 8 lm-in-thickness.…”

Section: Introductionmentioning

confidence: 99%

Phase transformation and fracture behavior of Cu/In/Cu joints formed by solid–liquid interdiffusion bonding

Tian

Hang

Zhao

et al. 2014

J Mater Sci: Mater Electron

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“…Studies of surface properties of thin films of indium and silver are not numerous [6][7][8], and most of them concern investigations of properties of films with thickness of hundreds of monolayers. In our previous studies of intermixing in the submonolayer range of In-Ag structures we proved formation of surface alloys in the whole range of In and Ag coverages for the structures In/Ag/W and Ag/In/W [12].…”

Section: S-19mentioning

confidence: 99%

“…The interdiffusion in thin film Ag/In couples was studied by Simič and Marinkovič [6], Roy and Sen [7], and Lin et al [8]. It was found that mass transport in thin film Ag/In system occurs mainly via interstitial diffusion of Ag in In and grain boundary diffusion of In in Ag [7].…”

Section: Introductionmentioning

confidence: 99%

Study of Ultrathin In-Ag Layers οn Tungsten by Means of Surface Spectroscopy Techniques

2008

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Auger electron spectroscopy, X-ray photoelectron spectroscopy, ultraviolet photoelectron spectroscopy, scanning tunnelling microscopy, low energy electron diffraction, and thermodesorption methods were used to investigate the process of growth of ultrathin In films and formation of In-Ag surface alloys on tungsten substrate. Several indium layers, having coverage ranging from 0.2 to 0.8 ML were deposited on tungsten substrate in room temperature. It was found that at the lowest coverages (Θ = 0.1-0.3 ML) indium atoms form (3 × 1) structure, characterized by very sharp low energy electron diffraction patterns. With increasing Θ they tend to form densely packed islands interpreted as slightly distorted In(111) monolayers. Surface diffusion of In onto the tungsten surface was studied by using ESCA imaging property of SCIENTA ESCA200 instrument. Measuring the photoelectron intensity as a function of two spatial coordinates and the energy, we observed movement of In atoms on the tungsten surface. On the basis of the change of surface coverage with distance surface the diffusion coefficient was evaluated at the temperature range of 400-700 K. Intermixing of ultrathin films of indium and silver, after their surface diffusion from the sample edges to the centre of the tungsten surface, were observed by using X-ray photoelectron spectroscopy, ultraviolet photoelectron spectroscopy and the Auger electron spectroscopy methods. Intermixing was controlled by means of photoemission spectra from the valence states and the In 4d level, as well as by X-ray photoelectron spectroscopy studies of indium and silver core levels excited by Al Kα source.

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“…The melting point of these compounds increases with the Ag content, i.e., eutectic (144°C) < AgIn 2 (166°C) < c (300°C) < f (670°C) < b (695°C). 5,6 In the mid 1990s, Roy and Sen 7 assessed contact and composite resistances to monitor the evolution of interfacial reaction at different temperatures.…”

Section: Introductionmentioning

confidence: 99%

Study of Low-Temperature Thermocompression Bonding in Ag-In Solder for Packaging Applications

Made

Gan

Yan

et al. 2008

Journal of Elec Materi

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Low-temperature solders have wide applications in integrated circuits and micro-electromechanical systems packaging. In this article, a study on Ag-In solder for chip-to-chip thermocompression bonding was carried out. The resulting joint consists of AgIn 2 and Ag 9 In 4 phases, with the latter phase having a melting temperature higher than 400°C. Complete consumption of In solder into a Ag-rich intermetallic compound is achieved by applying a bond pressure of 1.4 MPa at 180°C for 40 min. We also observe that the bonding pressure effect enables a Ag-rich phase to be formed within a shorter bonding duration (10 min) at a higher pressure of 1.6 MPa. Finally, prolonged aging leads to the formation of the final phase of Ag 9 In 4 in the bonded joints.

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Solid–liquid interdiffusion bonding between In-coated silver thick films

Cited by 39 publications

References 8 publications

Phase transformation and fracture behavior of Cu/In/Cu joints formed by solid–liquid interdiffusion bonding

Phase transformation and fracture behavior of Cu/In/Cu joints formed by solid–liquid interdiffusion bonding

Study of Ultrathin In-Ag Layers οn Tungsten by Means of Surface Spectroscopy Techniques

Study of Low-Temperature Thermocompression Bonding in Ag-In Solder for Packaging Applications

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