Solid-Phase Crystallization of Amorphous Silicon Films

Lee, Dong Nyung; Lee, Sung Bo

doi:10.5772/59723

Cited by 5 publications

(10 citation statements)

References 43 publications

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“…Thet hickness of the silica shell can be increased by mildly heating the particles.T hen the SiO 2 shell can be etched with HF to liberate the Si particles (Figure 12 a). [102] The concentration of the devitrifying agent must also be controlled, typically catalytic quantities of approximately 1mol %a re required. [100] Some elements, such as nickel, copper and palladium, form silicides and the act of forming acovalent bond between the Si and ametal can catalyze crystallization.…”

Section: Thermal Crystallization Methodsmentioning

confidence: 99%

“…[101] Under some conditions,t he cations that form silicides may instead crystallize through interstitial diffusion producing pure crystalline Si. [102] The concentration of the devitrifying agent must also be controlled, typically catalytic quantities of approximately 1mol %a re required. [103] If concentration is too high, interstitial diffusion occurs less because too many sites are occupied, blocking movement.…”

Section: Thermal Crystallization Methodsmentioning

confidence: 99%

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Silicon‐Based Dielectric Metamaterials: Focus on the Current Synthetic Challenges

et al. 2018

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Metamaterials have optical properties that are unprecedented in nature. They have opened new horizons in light manipulation, with the ability to bend, focus, completely reflect, transmit, or absorb an incident wave front. Optically active metamaterials in particular could be used for applications ranging from 3D information storage to photovoltaic cells. Silicon (Si) particles are some of the most promising building blocks for optically active metamaterials, with high scattering efficiency coupled to low light absorption for visible frequencies. However, to date ideal Si building blocks cannot be produced by bulk synthesis techniques. The key is to find a synthetic route to produce Si building blocks between 75-200 nm in diameter of uniform size and shape, that are crystalline, have few impurities, and little to no porosity. This Review provides a theoretical background on Si optical properties for metamaterials, an overview of current synthetic methods and gives direction towards the most promising routes to ideal Si particles for metamaterials.

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Section: Thermal Crystallization Methodsmentioning

confidence: 99%

Section: Thermal Crystallization Methodsmentioning

confidence: 99%

Silicon‐Based Dielectric Metamaterials: Focus on the Current Synthetic Challenges

et al. 2018

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“…Therefore, irradiation of adjacent points may induce a time at elevated temperatures in addition to that of the direct beam exposure. The intrinsic crystallization temperature for a-Si is ~900 K 35 , as determined in parallel work that uses short pulse lasers to crystallize a-Si 36 . Note that the absorbed laser energy during TDTR measurements of the samples in this study raises their temperature by <1 K 37 , and is not responsible for the recrystallization.…”

Section: Resultsmentioning

confidence: 99%

“…Similar results were noticed in Au and Ni (bcc) metals as well 40,43 due to thermal spikes 42 . Note that Cu, Au, and Ni all have lower recrystallization temperatures than Si 35,44 . It has also been shown that grain growth in the metallic samples has preferential growth directions that are dictated by the channeling of ions through their crystalline structures.…”

Section: Resultsmentioning

confidence: 99%

Reduction and Increase in Thermal Conductivity of Si Irradiated with Ga⁺via Focused Ion Beam

Alaie

Baboly

Jiang

et al. 2018

ACS Appl. Mater. Interfaces

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Focused Ion Beam (FIB) technology has become a valuable tool for the microelectronics industry and for the fabrication and preparation of samples at the micro/nanoscale. Its effects on the thermal transport properties of Si, however are not well understood, nor do experimental data exist. This paper presents a carefully designed set of experiments for the determination of the thermal conductivity of Si samples irradiated by Ga + FIB. Generally, the thermal conductivity decreases with increasing ion dose. For doses of >10 16 (Ga + /cm 2), a reversal of the trend was observed due to recrystallization of Si. This report provides insight on the thermal transport considerations relevant to engineering of Si nanostructures and interfaces fabricated or prepared by FIB.

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“…Ist das Kation zu klein, wie im Fall von Lithium, verhält es sich wie ein Schmelzmittel und katalysiert die Kristallisation auf Kosten einer Strukturdeformation . Unter bestimmten Voraussetzungen können Kationen, die Silicide bilden, stattdessen durch interstitielle Diffusion kristallisieren und reines kristallines Si erzeugen . Ebenso ist die Konzentration des Entglasungsmittels einzustellen, das normalerweise in katalytischen Mengen von ungefähr 1 Mol‐% benötigt wird .…”

Section: Kristallisationsverfahrenunclassified

Herausforderungen bei der Synthese siliciumbasierter dielektrischer Metamaterialien

et al. 2018

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Metamaterialien haben optische Eigenschaften, die in der Natur beispiellos sind. Mit ihrer Fähigkeit, eine einfallende Wellenfront zu beugen, zu fokussieren, vollständig zu reflektieren, durchzulassen oder zu absorbieren, haben sie bei der Lichtmanipulation neue Horizonte eröffnet. Optisch aktive Metamaterialien sind einsetzbar für Anwendungen, die von der 3D‐Informationsspeicherung bis zu photovoltaischen Zellen reichen. Siliciumpartikel gehören zu den vielversprechendsten Synthesebausteinen für optisch aktive Metamaterialien, bislang können sie aber nicht im großen Maßstab hergestellt werden. Besonders wünschenswert sind einheitliche kristalline Si‐Synthesebausteine mit 75–200 nm Durchmesser und wenigen Verunreinigungen und Poren. Hier werden die theoretischen Hintergründe der optischen Eigenschaften von Si für Metamaterialien besprochen, außerdem werden aktuelle Synthesemethoden und die aussichtsreichsten Wege zu Si‐Partikeln für Metamaterialienwerden vorgestellt.

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Solid-Phase Crystallization of Amorphous Silicon Films

Cited by 5 publications

References 43 publications

Silicon‐Based Dielectric Metamaterials: Focus on the Current Synthetic Challenges

Silicon‐Based Dielectric Metamaterials: Focus on the Current Synthetic Challenges

Reduction and Increase in Thermal Conductivity of Si Irradiated with Ga⁺via Focused Ion Beam

Herausforderungen bei der Synthese siliciumbasierter dielektrischer Metamaterialien

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Solid-Phase Crystallization of Amorphous Silicon Films

Cited by 5 publications

References 43 publications

Silicon‐Based Dielectric Metamaterials: Focus on the Current Synthetic Challenges

Silicon‐Based Dielectric Metamaterials: Focus on the Current Synthetic Challenges

Reduction and Increase in Thermal Conductivity of Si Irradiated with Ga+via Focused Ion Beam

Herausforderungen bei der Synthese siliciumbasierter dielektrischer Metamaterialien

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Reduction and Increase in Thermal Conductivity of Si Irradiated with Ga⁺via Focused Ion Beam