2010
DOI: 10.1007/s10854-010-0237-1
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Solid-phase epitaxial growth of (111)-oriented Si film on InGaO3(ZnO)5 buffer layer

Abstract: In this paper, the (0001) surface of an InGaO 3 (ZnO) 5 (c-IGZO) single-crystal buffer layer was used as a seed layer to control the orientation of a Si film in solidphase heteroepitaxial growth at 950°C. Despite a large lattice misfit of 20%, electron backscattering diffraction (EBSD) and transmission electron microscope (TEM) measurements substantiated that the (111)-oriented Si layers are grown epitaxially on the c-IGZO (0001) surface, which is explained by domain-matched epitaxy. The process can be further… Show more

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