Solid phase epitaxy versus random nucleation and growth in sub-20nm wide fin field-effect transistors

Duffy, Ray; Dal, M.J.H. van; Pawlak, Bartek; Kaiser, M.; Weemaes, R. G. R.; Degroote, B.; Kunnen, E.; Altamirano, E.

doi:10.1063/1.2749186

Cited by 103 publications

(91 citation statements)

References 16 publications

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“…These crystallites are the only remaining "seed" available for the crystal regrowth. 21 As seen from the sequence of images in Fig. 4, the crystallites grow in size after nucleation of recrystallisation fronts in the surrounding amorphous region.…”

Section: Due To the Drastically Limited Range Of Interactions Of Ga-imentioning

confidence: 91%

Visualising discrete structural transformations in germanium nanowires during ion beam irradiation and subsequent annealing

2014

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In this article we detail the application of electron microscopy to visualise discrete structural transitions incurring in single crystalline Ge nanowires upon Ga-ion irradiation and subsequent thermal annealing. Sequences of images for nanowires of varying diameters subjected to an incremental increase of the Ga-ion dose were obtained. Intricate transformations dictated by a nanowire's geometry indicate unusual distribution of the cascade recoils in the nanowire volume, in comparison to planar substrates. Following irradiation, the same nanowires were annealed in the TEM and corresponding crystal recovery followed in situ. Visualising the recrystallisation process, we establish that full recovery of defect-free nanowires is difficult to obtain due to defect nucleation and growth. Our findings will have large implications in designing ion beam doping of Ge nanowires for electronic devices but also for other devices that use single crystalline nanostructured Ge materials such as thin membranes, nanoparticles and nanorods

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Section: Due To the Drastically Limited Range Of Interactions Of Ga-imentioning

confidence: 91%

Visualising discrete structural transformations in germanium nanowires during ion beam irradiation and subsequent annealing

2014

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“…20 Twin boundary defects were clearly visible as well as polycrystalline grains. Si crystal quality degraded with decreasing W fin .…”

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confidence: 99%

“…3(c), the characteristic arrowhead-shaped front accompanied by {111} defects are clearly present at the foot of the fins, as seen previously in the work on Si fins. 20 The result of a 600 C 1 s RTA is shown in Fig. 4.…”

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confidence: 99%

The curious case of thin-body Ge crystallization

Duffy

Shayesteh

McCarthy

et al. 2011

Applied Physics Letters

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“…To address these issues, proposed ion implantation strategies, mainly cluster and cold implants, are aimed to minimize residual damage through substrate amorphization. Another issue is related to the regrowth of finFET devices [2]. The fin body gets amorphized during doping and its regrowth is more problematic than in the case of planar devices.…”

Section: Introductionmentioning

confidence: 99%

Atomistic modeling of ion implantation technologies in silicon

Marqués

Santos

Pelaz

et al. 2015

Nuclear Instruments and Methods in Physics Research Section B:

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Requirements for the manufacturing of electronic devices at the nanometric scale are becoming more and more demanding on each new technology node, driving the need for the fabrication of ultra-shallow junctions and finFET structures. Main implantation strategies, cluster and cold implants, are aimed to reduce the amount of end-of-range defects through substrate amorphization. During finFET doping the device body gets amorphized, and its regrowth is more problematic than in the case of conventional planar devices. Consequently, there is a renewed interest on the modeling of amorphization and recrystallization in the front-end processing of Si. We present multi-scale simulation schemes to model amorphization and recrystallization in Si from an atomistic perspective. Models are able to correctly predict damage formation, accumulation and regrowth, both in the ballistic and thermal-spike regimes, in very good agreement with conventional molecular dynamics techniques but at a much lower computational cost.

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Solid phase epitaxy versus random nucleation and growth in sub-20nm wide fin field-effect transistors

Cited by 103 publications

References 16 publications

Visualising discrete structural transformations in germanium nanowires during ion beam irradiation and subsequent annealing

Visualising discrete structural transformations in germanium nanowires during ion beam irradiation and subsequent annealing

The curious case of thin-body Ge crystallization

Atomistic modeling of ion implantation technologies in silicon

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