Solid-phase reactions in Ir/(111)Si systems studied by means of x-ray emission spectroscopy

Kurmaev, E.Z.; Galakhov, V. R.; Shamin, S. N.; Rodrı́guez, T.; Almendra, A.; Sanz‐Maudes, J.; Göransson, Kenneth; Engström, Ingvar

doi:10.1557/jmr.1998.0274

Cited by 7 publications

(6 citation statements)

References 7 publications

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“…10 Under our processing conditions, this phase appears in the hexagonal form, as deduced from soft x-ray emission measurements. 12 The Raman spectra are separated into two spectral ranges. The different bands observed for each sample would allow the use of the Raman spectra as signatures of the different iridium silicides.…”

Section: Resultsmentioning

confidence: 99%

Micro‐Raman study of iridium silicides

Almendra

Rodrı́guez

et al. 2002

J Raman Spectroscopy

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The micro-Raman spectra of three iridium silicides, IrSi, IrSi 1.75 and IrSi 3 , were obtained. The silicides were prepared by rapid thermal annealing of iridium films deposited on Si substrates. The three phases were identified by Rutherford backscattering spectrometry. The main bands observed in the micro-Raman spectra are described in order to provide a simple characterization method for these silicides with high spatial resolution. The three silicides present phonon bands around 165 and 200 cm −1 . Some additional broad bands between 240 and 500 cm −1 were also observed.

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Section: Resultsmentioning

confidence: 99%

Micro‐Raman study of iridium silicides

Almendra

Rodrı́guez

et al. 2002

J Raman Spectroscopy

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“…We conclude that these additional features near the Fermi energy are Table 3. Coordination numbers (CN) and average distances (AD) of Me-Me, Me-Si and Si-Si bonds (in Å) of 4d and 5d silicides obtained from [11] and [16][17][18][19][20] due to bands formed by hybridizing Si 3d states with the transition metal 4d and 5d states.…”

Section: Resultsmentioning

confidence: 99%

“…For the Ir-Si system a full set of binary compounds (high-temperature (HT) and low-temperature (LT) modifications of IrSi 3 , Ir 3 Si 5 and IrSi) was specially prepared (in connection with a study of solid-phase reactions at the Ir/Si interface under different heat treatments [17]). We also measured the XES and XPS spectra of these materials, shown in figures 1 and 2.…”

Section: Resultsmentioning

confidence: 99%

Valence band spectra of 4d and 5d silicides

Yarmoshenko¹,

Shamin²,

Elokhina³

et al. 1997

J. Phys.: Condens. Matter

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A full study of the electronic structure of 4d and 5d silicides (RuSi, RhSi, PdSi, OsSi, IrSi, , PtSi) is undertaken including XPS VB and XES ( and ) measurements and LMTO band structure calculations. It is found that d bands which dominate the density of states are more localized with increasing atomic number Z of the transition metal. A strong hybridization between silicon 3p and transition metal d states occurs over the entire valence band. Si 3s states are found to be not mixed with Si 3p and nd states but Si 3d states participate in bonding and hybridize with transition metal d states. The non-bonding character of the majority of nd states is not confirmed for 4d and 5d silicides.

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“…A single layer of IrSi 3 , 640 nm thick, was formed by annealing the samples at 675 • C for 15 s, and then processing further at 1000 • C for 5 s. Due to the coexistence of the Ir 3 Si 5 and IrSi compounds, even for very thin layers of IrSi, it is not possible to guarantee, with the experimental set-up and procedures described above, the formation of a single layer of IrSi. Therefore IrSi samples were prepared by arc melting of iridium and silicon in an argon atmosphere, and further annealed at 1000 • C [7].…”

Section: Methodsmentioning

confidence: 99%

The role of the Si 3s3d states in the bonding of iridium silicides (IrSi, Ir₃Si₅and IrSi₃)

Almendra

Rodrı́guez

et al. 2002

J. Phys.: Condens. Matter

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Si L 2,3 soft-x-ray emission spectra of IrSi, Ir 3 Si 5 and IrSi 3 compounds have been taken and the valence band densities of states associated with them have been analysed as functions of the concentration of Si atoms, the coordination number of Si-Ir in the iridium silicide compounds and the average distances of the Si-Si bonds in those compounds. The role of silicon 3s3d states in the bonding of the different iridium silicides is discussed. All the spectra show two regions, one associated with the low-energy Si 3s states and another one associated with high-energy Si 3s3d states. The effects of the interaction between the Si and Ir atoms in the silicides are: (a) the distribution of silicon states, even those associated with the least energetic s electrons, are modified, suggesting that the s electrons play a role in the formation of the iridium silicides; (b) the energy bandwidth corresponding to the Si 3s3d states increases up to 2.5 eV as the number of Si atoms that interact with the Ir atoms increases; and (c) there is a significant contribution from the d electrons, the fraction of the states associated with them being at least 20% of the total of states associated with the 3s3d states.

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Solid-phase reactions in Ir/(111)Si systems studied by means of x-ray emission spectroscopy

Cited by 7 publications

References 7 publications

Micro‐Raman study of iridium silicides

Micro‐Raman study of iridium silicides

Valence band spectra of 4d and 5d silicides

The role of the Si 3s3d states in the bonding of iridium silicides (IrSi, Ir₃Si₅and IrSi₃)

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Solid-phase reactions in Ir/(111)Si systems studied by means of x-ray emission spectroscopy

Cited by 7 publications

References 7 publications

Micro‐Raman study of iridium silicides

Micro‐Raman study of iridium silicides

Valence band spectra of 4d and 5d silicides

The role of the Si 3s3d states in the bonding of iridium silicides (IrSi, Ir3Si5and IrSi3)

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Product

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The role of the Si 3s3d states in the bonding of iridium silicides (IrSi, Ir₃Si₅and IrSi₃)