Solid solubility of As in Si as determined by ion implantation and cw laser annealing

Lietoila, A.; Gibbons, J. F.; Magee, T. J.; Peng, J.; Hong, J. D.

doi:10.1063/1.91198

Cited by 97 publications

(19 citation statements)

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“…Only a few TEM images of defects that could be interpreted as precipitates have been reported in the literature (11)(12)(13). At low annealing temperatures (400-600~ were found small particles (11) and rod-shaped structures (12), which were attributed to As precipitation.…”

mentioning

confidence: 93%

“…At low annealing temperatures (400-600~ were found small particles (11) and rod-shaped structures (12), which were attributed to As precipitation. At higher temperatures (900~176 precipitate-like defect agglomerates were observed for short annealing times (2.5 rain), and rod-like defect configurations along <110> directions were detected after a 30 rain annealing (13); even rods and ring structures were found for short annealing times (12). Nevertheless, to our knowledge, no result of detailed structural investigations of the evidenced particles has been so far reported.…”

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confidence: 98%

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Electron Microscopy of As Supersaturated Silicon

Armigliato¹,

Nobili²,

Solmi³

et al. 1986

J. Electrochem. Soc.

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Silicon specimens have been implanted with 1 • 1016 and 5 • 1016 As + ions/cm 2 and annealed with a pulsed ruby laser, thus giving rise to a supersaturated solution. Subsequent heat-treatments carried out in an inert ambient at either 450 ~ or 900~ led to a strong deactivation of the dopant. The physical nature of the inactive arsenic has been investigated by transmission electron microscopy (TEM), both in the weak beam and the high resolution imaging modes. For both doses and annealing temperatures, the presence of precipitates, having a diameter ranging from 1.5 to 3 nm, has been observed. Other defects, such as dislocations, perfect and faulted loops, and rod-like defects have also been detected in our TEM investigations. Despite the high density of the detected precipitates, the corresponding amount of arsenic atoms, as deduced by assuming an SiAs composition, can account for only a fraction of the inactive dopant. A possible explanation is that particles in the subnanometer range are invisible even in the high resolution images. This hypothesis is supported by the absence of contrast found in corresponding simulated high resolution images.Arsenic, due to the high solubility and low diffusivity, is the silicon n-type dopant more commonly used in VLSI circuits, both for the source and drain of MOS transistors and the emitter of bipolar transistors.Several works performed in recent years have investigated the physical nature of electrically inactive As, which is present in silicon at high doping levels. Most of these authors suggest the formation of complex point defects or clusters in thermal equilibrium with the As in solution (1-6). The existence of arsenic clusters, however, is presently not more than a hypothesis. Chu and Masters (7), from-angle-scanned channeling studies, reported results that are compatible with cluster formation, but there is not, up to now, direct evidence of the arsenic clusters.Recent work (8, 9) performed on ion-implanted and laser-annealed silicon, doped with As in a wide range of compositions, provided evidence that the electrically active concentration depends only on temperature, a finding leading to the conclusion that a two-phase equilibrium takes place. The formation of a second phase was also indicated by the isochronal heating behavior, showing a reverse annealing typical of a precipitation process (8). Precipitates were, in fact, detected by small angle x-ray scattering (SAXS), a technique that is suitable because of the noticeably different atomic numbers of Si and As. These determinations provided information on the size distribution and shape of these precipitates that was found to be in agreement with the classical theory of nucleation, which predicts a decrease in particle density and an increase in particle size as the supersaturation decreases (9). Moreover, most of these particles should be coherent with the silicon matrix, as expected from the RBS experiments performed in channeling conditions (7, 10), showing that the off-axis concentration is markedly lower than...

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confidence: 93%

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confidence: 98%

Electron Microscopy of As Supersaturated Silicon

Armigliato¹,

Nobili²,

Solmi³

et al. 1986

J. Electrochem. Soc.

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“…Moreover, nonequilibrium annealing processes such as flash or laser annealing ͑LA͒ result in levels of As solubility as high as 9.6ϫ 10 21 cm −3 . 1 However, active As distribution in Si at concentrations higher than 10 20 cm −3 has a tendency to electrically deactivate when subjected to thermal treatment in the 300-750°C range, [2][3][4] even without forming extended precipitates. This was confirmed by Rutherford backscattering spectroscopy 5,6 ͓which revealed just slight atom displacement ͑0.2 Å͔͒, 7 x-ray standing wave spectroscopy, 8,9 and transmission electron microscopy.…”

Section: Introductionmentioning

confidence: 99%

Correlation of local structure and electrical activation in arsenic ultrashallow junctions in silicon

Giubertoni

Pepponi

Gennaro

et al. 2008

Journal of Applied Physics

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The understanding of the behavior of arsenic in highly doped near surface silicon layers is of crucial importance for the formation of N-type ultrashallow junctions in current and future very large scale integrated technology. This is of particular relevance when studying recently developed implantation and annealing methods. Past theoretical as well as experimental investigations have suggested that the increase in As concentration, and therefore the reciprocal proximity of several As atoms, leads to a drastic increase in electrically inactive defects giving only marginal reduction in sheet resistance. Monoclinic SiAs aggregates as well as various arsenic-vacancy clusters contribute to the deactivation of arsenic. This study aims to correlate between the results of electrical activation measurements and x-ray absorption fine structure measurements. Samples were doped with a nominal fluence of 1 ϫ 10 15-3ϫ 10 15 atoms/ cm 2 , implanted at 2 keV, and annealed by rapid thermal treatments, laser submelt treatments, and a combination of both. Hall effect and sheet resistance measurements have been performed to obtain the density of charge carriers. Secondary ion mass spectrometry has been employed to measure the depth profile and the total retained fluences. The percentage of substitutional arsenic has been obtained by least-squares fits of the measured x-ray absorption spectra with simulated spectra of relaxed structures of the defects obtained by density functional theory. A good agreement with the Hall effect measured electrically active dose fraction has been obtained and a quantification of the population of the different defects involved has been attempted.

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“…我们对高纯度单晶Si衬底进行As离子注入掺杂以获得低电阻率的背电极层 [19] . 离子注入会使衬底晶格结构受到损伤 [27] , 甚至形成无定形Si层, 因此离子注入后需要对样品进行退火处理以消除缺陷、恢复Si晶格有序结构 [28][29][30] . 我们向高纯Si中注入了两种不同剂量的As离子以制备背电极, 注入浓度分别为5×10 15 cm −2 (#1)和表 1 典型的Si:As BIB焦平面探测器特性 [15] [19] .…”

Section: 垂直结构Si基bib红外探测器材料unclassified

The research progress of Si-based blocked-impurity-band infrared detecting materials and detectors

Zhu

et al. 2021

Sci. Sin.-Phys. Mech. Astron.

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Solid solubility of As in Si as determined by ion implantation and cw laser annealing

Cited by 97 publications

References 5 publications

Electron Microscopy of As Supersaturated Silicon

Electron Microscopy of As Supersaturated Silicon

Correlation of local structure and electrical activation in arsenic ultrashallow junctions in silicon

The research progress of Si-based blocked-impurity-band infrared detecting materials and detectors

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