Solid Solution in the Silicon Nitride-Silicon Dioxide System

Tombs, N. C.; Sewell, F. A.; Comer, J. J.

doi:10.1149/1.2412079

Cited by 27 publications

(21 citation statements)

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“…It was shown earlier by Gaind et al (9) that the SiH4-CO2-NHs-H2 chemical system results in better process control, especially in forming Si3N4-rich oxynitride films; e.g., SilOmNp films with refractive index ~1.73 can be formed with NH3:CO2 ratio of ~6 at 900~C, whereas for other chemical systems, the NH3:oxidant ratio must be at least 50, usually ~5000 depending upon the oxidant (1)(2)(3)(4)(5).…”

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confidence: 99%

“…Silicon oxynitride (SilOmNp) films have been chemical vapor deposited from various chemical systems (1)(2)(3)(4)(5)(6), and the resulting properties have been reported (1)(2)(3)(4)(5)(6)(7)(8). It was shown earlier by Gaind et al (9) that the SiH4-CO2-NHs-H2 chemical system results in better process control, especially in forming Si3N4-rich oxynitride films; e.g., SilOmNp films with refractive index ~1.73 can be formed with NH3:CO2 ratio of ~6 at 900~C, whereas for other chemical systems, the NH3:oxidant ratio must be at least 50, usually ~5000 depending upon the oxidant (1)(2)(3)(4)(5).…”

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confidence: 99%

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Physicochemical Properties of Chemical Vapor‐Deposited Silicon Oxynitride from a SiH4 ‐ CO 2 ‐ NH 3 ‐ H 2 System

Gaind

Hearn

1978

J. Electrochem. Soc.

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The physicochemical properties of amorphous silicon oxynitride (SilOmND) films deposited from a SiH4-CO.2-NH~-H2 system have been investigated. The properties of CVD Si3N4 and SiO2 deposited from SiH4-NH3-H2 and SiH4-CO2-H2, respectively, were also investigated, wherever appropriate, to determine the end points of the SilO~No series. The film stress is a continuous, approximately parabolic function of silicon oxynitride composition. The SilOmN D composition also determines its resistance to oxidation in steam (950~ It is shown that a ,-~500k thick film with the composition of Si2ON2 is an adequate barrier to steam oxidation for 6 hr at 1000~ The etch rate of SilOmN, films is a function of composition in 7:1 BHF. In refluxing I4_~PO4, a peak in etch rate exists at a film composition of ~64% equivalent Si3N4. SilOmNo films deposited between 900 ~ and 1000~C densify 2-3% after "heat-treatment" at 1000~ for 2 hr and their etch rates decrease by ~50%; whereas the stress increases (more tensile) as a result of heat-treatment.Silicon oxynitride (SilOmNp) films have been chemical vapor deposited from various chemical systems (1-6), and the resulting properties have been reported(1-8). It was shown earlier by Gaind et al. (9) that the SiH4-CO2-NHs-H2 chemical system results in better process control, especially in forming Si3N4-rich oxynitride films; e.g., SilOmNp films with refractive index ~1.73 can be formed with NH3:CO2 ratio of ~6 at 900~C, whereas for other chemical systems, the NH3:oxidant ratio must be at least 50, usually ~5000 depending upon the oxidant (1-5).It is our purpose to show the similarity between the silicon oxynitrides produced by the above system and those reported in the literature. This is done by comparing physicochemical properties wherever possible with the existing data in the literature, we will at the same time be filling in gaps in the knowledge of physicochemical properties of silicon oxynitride, especially those which are important in the processing of devices (bipolar, I~'ET, etc.) which require wet etching, e.g., the oxidation barrier of oxynitrides to steam and the etch rate in refluxing phosphoric acid. There are no available data in the literature regarding these physicochemical properties.From a device-processing point of view, the importance of the effect of postdeposition "heat-treatment" (which simulates processes like diffusion or oxidation) on physicochemical properties of these dielectric films cannot be overemphasized. Thus we have investigated the effect of heat-treatment on SilOmNp film stress, etch rate, and changes in density (thickness). We have also investigated the effect of the deposition temperature on SitOmNp physicochemical properties by investigating these at two deposition temperatures, 900 ~ and 1000~ Experimental

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Physicochemical Properties of Chemical Vapor‐Deposited Silicon Oxynitride from a SiH4 ‐ CO 2 ‐ NH 3 ‐ H 2 System

Gaind

Hearn

1978

J. Electrochem. Soc.

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“…If this were the case, then foxy = rsi3N4 + rsio~ [7] From Eq. [4], [5], and [6], with nl, n'l, and n"l equal to 1, we have K"onCsiH4 -~-(K"n -~-K"ox)CSiH4 [8] Thus due to above hypothesis, K"on should be equal to K"n + K"ox. This is not the case as can be seen in Table I [10]…”

Section: Theory and Calculationsmentioning

confidence: 99%

“…Equations [8] through [10] are applicable within the temperature range of 850~176 and in those reactors where the flow of gases is nearly parallel to the wafer surface.…”

Section: Theory and Calculationsmentioning

confidence: 99%

Oxynitride Deposition Kinetics in a SiH4 ‐ CO 2 ‐ NH 3 ‐ H 2 System

Gaind

Ackermann

Lucarini

et al. 1977

J. Electrochem. Soc.

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Silicon oxynitride films false(SilOmNpfalse) have been deposited from SiH4‐CO2‐NH3‐H2 chemical system in a vertical, cold‐wall, multiple wafer, barrel‐type reactor. The kinetics of SiH4‐CO2 and SiH4‐NH3 reactions, both in H2 , have also been studied in the same reactor. All three reactions are first order with respect to SiH4 under conditions of “isolation technique.” Within the selected experimental range, the SiO2 deposition rate is independent of CO2 concentration, the Si3N4 deposition rate is independent of NH3 concentration, and the SilOmNp deposition rate is nearly independent of both CO2 and NH3 concentrations. The deposition rate of SiO2 , Si3N4 , and SilOmNp are not dependent on the H2 flow rate in the experimental range of 60–130 liters/min; thus all three reactions are chemical‐surface rate limited within the experimental range. The activation energies are 23.5, 24, and 29 kcal/g‐mole for SilOmNp , SiO2 , and Si3N4 , respectively. An anomalous effect of deposition temperature on silicon oxynitride refractive index (composition) was discovered and has been explained by the use of adsorption theory.

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“…Amorphous silicon oxynitrides (a-SiO x N y ) are materials whose composition ranges from SiO 2 to Si 3 N 4 [1][2][3]. They have received interest given their potential to continuously adjust the physical properties to those in between the two to remove Si-Si bonds at the SiO 2 /Si interface [5].…”

Section: Introductionmentioning

confidence: 99%

Characterisation of silicon oxynitride thin films and their response to swift heavy-ion irradiation

Mota‐Santiago¹,

Nadzri²,

Kremer³

et al. 2022

J. Phys. D: Appl. Phys.

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Silicon oxynitrides (a-SiOxNy) are materials whose composition ranges between two binary materials: a-SiO2 and a-Si3N4. In this work, we present a systematic study of the fine structure of the damaged regions produced by swift heavy-ions (SHIs), or ‘ion-tracks’ and quantify the density variation profiles with respect to composition. Thin films were deposited by plasma-enhanced chemical vapor deposition (CVD), where thickness, density, stoichiometry and bond configuration were initially determined. The fine structure and radial size of the ion tracks was determined using small angle X-ray scattering. The tracks exhibit a core-shell cylindrical geometry, with an under-dense core surrounded by an over-dense shell with a smooth transition between the two regions. We observed two trends with composition: a constant increasing ion track radius is observed when the O/Si ratio is below one (0≤x≤1). And saturation of the radial dimensions above this value, being similar to a-SiO2. The IR spectra allowed to quantify the bond configuration and its evolution with fluence. After irradiation, the energy deposited by the SHI irradiation leads to a preferential damage of Si-N bonds. IR spectroscopy also showed the formation of new Si-H bonds with increasing fluences and resulting in a rather complex ion-induced structural modification of the a-SiOxNy network.

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Solid Solution in the Silicon Nitride-Silicon Dioxide System

Abstract: in dielectric loss just prior to the permittivity peak was due to the increasing conduction losses. The sharp rise in loss at temperatures just above the transformation was due to the ever increasing conduction losses and the sharp decrease in permittivity in the cubic phase region.

Cited by 27 publications

References 1 publication

Physicochemical Properties of Chemical Vapor‐Deposited Silicon Oxynitride from a SiH4 ‐ CO 2 ‐ NH 3 ‐ H 2 System

Physicochemical Properties of Chemical Vapor‐Deposited Silicon Oxynitride from a SiH4 ‐ CO 2 ‐ NH 3 ‐ H 2 System

Oxynitride Deposition Kinetics in a SiH4 ‐ CO 2 ‐ NH 3 ‐ H 2 System

Characterisation of silicon oxynitride thin films and their response to swift heavy-ion irradiation

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