Solid solution of carbon in β-SiC

Gadzira, M. P.; Gnesin, G. G.; Mykhaylyk, Oleksandr O.; Britun, V. F.; Andreyev, O.

doi:10.1016/s0167-577x(97)00263-2

Cited by 19 publications

(7 citation statements)

References 11 publications

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“…If C or Si atoms dissolved in SiC, considering the tetrahedral covalent radius of C (r cov(C) = 0.077 nm) and Si (r cov (Si) = 0.107 nm) [9], then the lattice parameters of C-SiC would be smaller and those of Si-SiC would be greater than those of pristine SiC. Gadzira et al [10] reported that the solid solution of C atoms in β-SiC (3C) powder prepared by self-propagation high-temperature synthesis caused a decrease in the a-axis value, whereas that of C dissolved in the SiC body increased to the standard value after heating at a high sintering pressure and temperature. The C dissolved in SiC was disintegrated and precipitated at the grain boundary.…”

Section: Resultsmentioning

confidence: 99%

Electrical and thermal properties of off-stoichiometric SiC prepared by spark plasma sintering

Taki

Kitiwan

Katsui

et al. 2018

Journal of Asian Ceramic Societies

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Off-stoichiometric silicon carbide (SiC), C-and Si-added SiC (6H, α-type), with an excess amount of C or Si from 1 to 5 mol%, were fabricated by spark plasma sintering at 2373 K and 50 MPa in a vacuum. The microstructure, electrical, and thermal properties of offstoichiometric SiC were investigated. The lattice parameters increased after the addition of C and Si, suggesting the formation of solid solutions of C and Si in SiC. The addition of C and Si increased the densification, while the addition of a small amount of Si (1 mol%) significantly improved the densification. The electrical conductivity (σ) of C-added SiC was 0.7-1.4 × 10 2 S m −1 at 298-1150 K. The Seebeck coefficient of C-added SiC changed from nto p-type with increasing addition of C, whereas that of Si-added SiC was almost independent of the amount of Si added. The thermal conductivity of C-and Si-added SiC was in the range of 180-250 W m −1 K −1 , which was greater than that of pristine SiC (100 W m −1 K −1 ) at room temperature.

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Section: Resultsmentioning

confidence: 99%

Electrical and thermal properties of off-stoichiometric SiC prepared by spark plasma sintering

Taki

Kitiwan

Katsui

et al. 2018

Journal of Asian Ceramic Societies

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“…to electronic conduction. Excess C in SiC creates acceptor centers and leads to hole conductivity [12,13]. It is technologically difficult to realize controlled nonstoichiometry for self-doping at growing single-crystal SiC, which occurs under thermodynamic conditions close to equilibrium, but can be carried out under nonequilibrium conditions by the deposition of carbon and silicon ions with an energy of~100 eV by direct ion deposition method [10].…”

Section: Methodsmentioning

confidence: 99%

The Chemresistive Properties of SiC Nanocrystalline Films with Different Conductivity Type

2020

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We have demonstrated the ability of thin nanocrystalline SiC films with various types of conductivity to detect oxidative (O2), reducing gases (CO, CH4) with the maximum allowable concentrations for human safety. It was shown that n-nc-SiC films with electronic conductivity had a higher gas sensitivity Sn than p-nc-SiC films with hole conductivity sensivity Sp to the action of gases in a wide concentration range. So, for the maximum permissible concentrations of O2 (3%), CO (0.1%), CH4 (10%) the sensitivity ratio of the films Sn/Sp was 2.9; 4.8 and 10, respectively. For research, we used a simple resistor geometry optimizing which it is possible to significantly increase the sensitivity of films to gases in order to detect extremely low gas concentrations. Thus, based on nc-SiC films, it is possible to develop high-temperature gas sensors to detect reactive gases in a wide range of concentrations, including threshold allowable values.

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“…The investigation of the microstructure of the np-SiC by X-ray diffractometry (XRD) and high resolution transmission electron microscopy (HRTEM) methods have shown that the synthesis of the np-SiC in non-equilibrium conditions leads to the decrease of the β-SiC lattice parameter up to 4.3536 Å in comparison with the standard value (4.3589 Å). A lower value of the lattice parameter in comparison with a standard one can be explained by the partial substitution of silicon atoms in SiC lattice by carbon, nitrogen and oxygen atoms having smaller covalent radii [15] resulting in the formation of the solid solution SiC-C and small fraction of the Si 3 N 4 , Si 2 N 2 O, SiO 2 phases. Fig.…”

Section: Sample Preparation and Characterizationmentioning

confidence: 96%

“…The np-SiC was prepared by self-propagating high temperature synthesis (SHS) method in argon atmosphere from a mixture of fine elemental silicon powder and thermally exfoliated graphite (TEG) [15][16][17]. The hetero-phase interaction between components is accompanied by an exothermic effect.…”

Section: Sample Preparation and Characterizationmentioning

confidence: 99%

Intrinsic defects in nonstoichiometric β-SiC nanoparticles studied by pulsed magnetic resonance methods

Савченко¹

2009

Semicond. phys. quantum electron. optoelectron.

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Nonstoichiometric -SiC nanoparticles (np-SiC) have been studied by electron paramagnetic resonance (EPR) and pulsed magnetic resonance methods including field swept electron spin echo (FS ESE), pulsed electron nuclear double resonance (ENDOR) and hyperfine sublevel correlation spectroscopy (HYSCORE). Four ESE signals related to the paramagnetic centers labeled D1, D2, D3, D4 with g = 2.0043, g = 2.0029, g = 2.0031, g = 2.0037 were resolved in FS ESE spectrum due to their different spin relaxation times. As deduced from the study of the superhyperfine structure of the D2 defect by FS ESE, pulse ENDOR and HYSCORE methods the dominant paramagnetic center is a carbon vacancy (V C) localized in -SiC crystalline phase of the np-SiC. The parameters of the D2 center coincide with those found for the V C in np-SiC obtained by laser pyrolysis method. Three other defects were identified by comparison of their EPR parameters with the microstructure of the np-SiC. The D1 defect was attributed to the V C vacancy located in -SiC crystalline phase. The D3 defect is identified with the carbon dangling bonds located in the carbon excess phase. The D4 defect was assigned to a threefold-coordinated Si atom bonded with one nitrogen atom, resulting in the formation of the local bonding Si-Si 2 N configuration in -Si 3 N 4 phase.

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Solid solution of carbon in β-SiC

Cited by 19 publications

References 11 publications

Electrical and thermal properties of off-stoichiometric SiC prepared by spark plasma sintering

Electrical and thermal properties of off-stoichiometric SiC prepared by spark plasma sintering

The Chemresistive Properties of SiC Nanocrystalline Films with Different Conductivity Type

Intrinsic defects in nonstoichiometric β-SiC nanoparticles studied by pulsed magnetic resonance methods

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