Solid-State Dewetting Dynamics of Amorphous Ge Thin Films on Silicon Dioxide Substrates

Toliopoulos, Dimosthenis; Fedorov, Alexey; Bietti, Sergio; Bollani, Monica; Bonera, Emiliano; Ballabio, Andrea; Isella, Giovanni; Bouabdellaoui, Mohammed; Abbarchi, Marco; Tsukamoto, Shiro; Sanguinetti, S.

doi:10.3390/nano10122542

Cited by 8 publications

(4 citation statements)

References 31 publications

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“…%, which is compatible with the decrease of b β and the increase of a β and c β in Figure e. As seen in Figure d, the RHEED pattern of sample #10 in the mixed phase exhibits the Debye ring, which indicates the polycrystal nature Figure e,f shows RHEED patterns of the rocksalt phase {111} plane along [10] azimuth of samples #19 and #20, respectively.…”

Section: Resultsmentioning

confidence: 99%

Investigation of Phase Transition and Ultrawide Band Gap Engineering in MgGaO Semiconductor Thin Films

Yang,

Shou,

Almujtabi

et al. 2023

ACS Appl. Opt. Mater.

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Magnesium gallium oxide (MgGaO) ternary alloys with band gap energy larger than ∼5.0 eV can provide opportunities for optoelectronics in the deep ultraviolet spectral range and power electronics with extremely high critical field strength. It is important to grow high-quality MgGaO alloys with varied Mg compositions and understand their structural and optical properties. From this perspective, 20 MgGaO samples with Mg atomic percentages from 0 to 100% were grown by using oxygen plasmaassisted molecular beam epitaxy. Band gap tuning from 5.03 to 5.89 eV was achieved for the ternary alloys, and all samples had a transmittance of over ∼90% in the visible spectral range. The lattice structures were confirmed to transform from the β phase in Ga-rich materials to the β and rocksalt mixture phase in high-Ga high-Mg alloys and to the pure rocksalt phase in Mg-rich alloys. How lattice parameters change with the increase of Mg atom % and the epitaxy relationship between MgGaO films and c-sapphire substrates were revealed.

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Section: Resultsmentioning

confidence: 99%

Investigation of Phase Transition and Ultrawide Band Gap Engineering in MgGaO Semiconductor Thin Films

Yang,

Shou,

Almujtabi

et al. 2023

ACS Appl. Opt. Mater.

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“…It has been recently studied and is well known, that thermal annealing results in thin-film transformation into droplets or islands 17 – 20 . The transformation mechanism is driven by thermally accelerated diffusion that leads to the minimalization of surface energy in the system 21 – 24 . However, there is no clearly explained, step by step, mechanism for this process, as well as no common terminology for it.…”

Section: Introductionmentioning

confidence: 99%

Transformation of bimetallic Ag–Cu thin films into plasmonically active composite nanostructures

Łapiński

Kozioł

Skubida

et al. 2023

Sci Rep

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Formation of plasmonically active silver, copper and composite silver-copper nanostructures were studied in this paper. Metallic nanostructures were fabricated by thermal disintegration, so called dewetting, of the thin films in an argon atmosphere. The formation process of the nanostructures was in-situ observed by a novel method, based on resistance measurements. The influence of the material and thickness of the initial thin film on temperature of their disintegration was investigated. Electrical measurements were validated by scanning electron microscopy observations, while metallic the behavior of nanostructures was studied by XPS method. The formation of silver-copper nanocomposite structures was confirmed by UV–vis spectroscopy. Plasmon resonance with two characteristic peaks for nanocomposite structures was observed.

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“…That process can be observed at temperatures well below the melting point of the nanolayer material, even at room temperature. The transformation mechanism is driven by a thermally accelerated diffusion that leads to the minimalization of surface free energy in the system [5][6][7][8]. Thin films, especially those with nanometer-scale thicknesses, have a relatively high surface energy and a large interfacial area with the substrate.…”

Section: Introductionmentioning

confidence: 99%

Thermal Instability of Gold Thin Films

et al. 2023

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The disintegration of a continuous metallic thin film leads to the formation of isolated islands, which can be used for the preparation of plasmonic structures. The transformation mechanism is driven by a thermally accelerated diffusion that leads to the minimalization of surface free energy in the system. In this paper, we report the results of our study on the disintegration of gold thin film and the formation of nanoislands on silicon substrates, both pure and with native silicon dioxide film. To study the processes leading to the formation of gold nanostructures and to investigate the effect of the oxide layer on silicon diffusion, metallic film with a thickness of 3 nm was deposited by molecular beam epitaxy (MBE) technique on both pure and oxidized silicon substrates. Transformation of the thin film was observed by low-energy electron microscopy (LEEM) and a scanning electron microscope (SEM), while the nanostructures formed were observed by atomic force microscope (AFM) method. Structural investigations were performed by low-energy electron diffraction (LEED) and X-ray photoelectron spectroscopy (XPS) methods. Our experiments confirmed a strong correlation between the formation of nanoislands and the presence of native oxide on silicon substrates.

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Solid-State Dewetting Dynamics of Amorphous Ge Thin Films on Silicon Dioxide Substrates

Cited by 8 publications

References 31 publications

Investigation of Phase Transition and Ultrawide Band Gap Engineering in MgGaO Semiconductor Thin Films

Investigation of Phase Transition and Ultrawide Band Gap Engineering in MgGaO Semiconductor Thin Films

Transformation of bimetallic Ag–Cu thin films into plasmonically active composite nanostructures

Thermal Instability of Gold Thin Films

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