Solid-state electrolyte gated synaptic transistor based on SrFeO2.5 film channel

Shi, Peng; Wang, Dong; Yu, Tongliang; Xing, Ruofei; Wu, Zhenfa; Yan, Shishen; Wang, Lin; Chen, Yanxue; Ren, Huixue; Yu, Chunfeng; Li, Fangjun

doi:10.1016/j.matdes.2021.110022

Cited by 22 publications

(16 citation statements)

References 51 publications

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“…These classification accuracies are clearly among the highest accuracy values of recently reported SynTs. [17,18,54] In Table 1, we present the materials and switching properties of the SynT in this work and other reported SynTs. The purpose of this table is to benchmark synaptic devices following wafer scale integration, and using microfabrication techniques and materials that are compatible with CMOS BEOL integration.…”

Section: Neuromorphic Computing Simulationmentioning

confidence: 99%

An Ultralow Power Li_xTiO₂‐Based Synaptic Transistor for Scalable Neuromorphic Computing

Nguyen

Schneegans

Salot

et al. 2022

Adv Elect Materials

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Artificial synapses based on electrochemical synaptic transistors (SynTs) have attracted tremendous attention toward massive parallel computing operations. However, most SynTs still suffer from downscaling limitations and high energy consumption. To overcome such drawbacks, a complementary metal–oxide–semiconductor (CMOS) back‐end‐of‐line compatible solid‐state SynT is presented, which includes an ultrathin (10 nm thick) quasiamorphous LixTiO2 channel. A nonvolatile conductance modulation (<75 nS) is achieved through reversible lithium intercalation into the channel, and synaptic functions, such as long‐term potentiation/depression involve ultralow switching energy of 2 fJ µm−2. Moreover, this SynT shows excellent endurance (>105 weight updates) and recognition accuracy (>95% on the MNIST data test using crossbar simulations). Furthermore, a comprehensive electrochemical study allows deeper insight into the specific pseudocapacitive mechanism at the origin of conductance modulation. These results underline the high potential of LixTiO2‐based SynTs for energy‐efficient neuromorphic applications.

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Section: Neuromorphic Computing Simulationmentioning

confidence: 99%

An Ultralow Power Li_xTiO₂‐Based Synaptic Transistor for Scalable Neuromorphic Computing

Nguyen

Schneegans

Salot

et al. 2022

Adv Elect Materials

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“…Up to now, various electrolytes have been used in synaptic transistors, including ionic liquids, sol–gel electrolytes, nanocrystal solid electrolytes, and polymer electrolytes. [ 23–25 ] Excellent electrical performances have been accomplished in electrolyte‐gated transistors. Recently, several groups found that lanthanum fluoride (LaF 3 ), which is a solid‐state superionic conductor with mobile fluorine ions, is promising to design EDL transistors as a gate dielectric.…”

Section: Introductionmentioning

confidence: 99%

“…Up to now, various electrolytes have been used in synaptic transistors, including ionic liquids, sol-gel electrolytes, nanocrystal solid electrolytes, and polymer electrolytes. [23][24][25] Excellent electrical performances have been accomplished in electrolyte-gated transistors.…”

Section: Introductionmentioning

confidence: 99%

Solid‐State Optoelectronic Synapse Transistor Using a LaF₃ Gate Dielectric

Shi

Xing

et al. 2022

Physica Rapid Research Ltrs

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As a new generation of core components for neuromorphic computing, optoelectronic synaptic devices have the advantages of high bandwidth and less energy consumption. They can combine the functions of visual sensing, signal processing, and memory in one device. Herein, an all‐solid‐state optoelectronic synaptic transistor using indium gallium zinc oxide (IGZO) as the channel and lanthanum fluoride (LaF3) as the gate dielectric is designed and fabricated. Its synaptic plasticity induced by electric and optical stimuli is investigated. LaF3 is a solid superionic conductor with plenty of mobile fluoride ions, which can be used to achieve a high on/off ratio of more than 105 and a low subthreshold swing less than 150 mV dec−1 in this novel synaptic transistor. Due to the ion‐trapping effect at the interface, synaptic plasticity can be achieved upon electrical stimulation. Synaptic plasticity by light pulse stimuli can also be accomplished with the assistance of the persistent photoconductivity effect in IGZO channel. Furthermore, it is found that the synaptic plasticity induced by light stimuli can be modulated by gate voltage. These results provide a new way to control synaptic function and extend the function of optoelectronic synaptic devices.

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“…[1,2] In ionic gating, an ion-conducting dielectric is used as the gating medium, which responds to external bias via motion of ions through the material, thus accumulating ionic charge at the electrolyteperovskite interface. This can be achieved at room temperature, often using highion-mobility ionic liquids or solid-state ion gels (ionic liquids suspended in polymer matrices), [3] though polymer, [4] nanoporous glassy oxide, [5,6] and composite resin [7,8] alternatives have also been reported. Upon gating, the electrolyte/perovskite interface acts as an electric double-layer capacitor, capable of achieving very high local electric fields at low applied bias.…”

mentioning

confidence: 99%

“…Due to charge compensation, oxygen deficiency alters the B-site cation oxidation state, thereby reversibly modulating properties. Electrochemical control of oxygen vacancies using ionic gating has thus been demonstrated to tune the electronic, magnetic, and/or optical properties of cobaltites, [7,12,13,[21][22][23][24][25][26][27] manganites, [23,28,29] nickelates, [30,31] and ferrites, [8,24,[32][33][34] to name just a few examples in the field of oxide perovskites, as well as phenomena stemming from interlayer interactions in perovskite vertical heterostructures [33,35] and properties of various other oxides. [1] While this oxygen vacancy modulation is a key pathway toward electrochemical control of properties in oxides, electrochemical manipulation via other ions is…”

mentioning

confidence: 99%

Voltage Control of Patterned Metal/Insulator Properties in Oxide/Oxyfluoride Lateral Perovskite Heterostructures via Ion Gel Gating

Lefler

Postiglione

Leighton

et al. 2022

Adv Funct Materials

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Dynamic control of patterned properties in perovskite oxide films can enable new architectures for electronic, magnetic, and optical devices. In this study, it is shown that SrFeO3‐δ/SrFeO2F laterally‐heterostructured films enable voltage‐controlled tunable and reversible metal‐insulator patterned properties using room‐temperature ion gel gating. Specifically, SrFeO3‐δ film regions can be toggled between insulating HxSrFeO2.5 and metallic SrFeO3 by electrochemical redox, while SrFeO2F regions remain robustly insulating and are unaffected by ion gel gating. Various gating architectures are also compared and establish the advantages of employing a conductive substrate as the contacting electrode, as opposed to at the film surface, thereby achieving complete and reversible reduction and oxidation among SrFeO3‐δ, HxSrFeO2.5, and SrFeO3. This approach to voltage‐modulated patterned electronic, optical, and magnetic properties should be broadly applicable to oxide materials amenable to fluoridation, and potentially other forms of anion substitution.

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Solid-state electrolyte gated synaptic transistor based on SrFeO2.5 film channel

Cited by 22 publications

References 51 publications

An Ultralow Power Li_xTiO₂‐Based Synaptic Transistor for Scalable Neuromorphic Computing

An Ultralow Power Li_xTiO₂‐Based Synaptic Transistor for Scalable Neuromorphic Computing

Solid‐State Optoelectronic Synapse Transistor Using a LaF₃ Gate Dielectric

Voltage Control of Patterned Metal/Insulator Properties in Oxide/Oxyfluoride Lateral Perovskite Heterostructures via Ion Gel Gating

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Solid-state electrolyte gated synaptic transistor based on SrFeO2.5 film channel

Cited by 22 publications

References 51 publications

An Ultralow Power LixTiO2‐Based Synaptic Transistor for Scalable Neuromorphic Computing

An Ultralow Power LixTiO2‐Based Synaptic Transistor for Scalable Neuromorphic Computing

Solid‐State Optoelectronic Synapse Transistor Using a LaF3 Gate Dielectric

Voltage Control of Patterned Metal/Insulator Properties in Oxide/Oxyfluoride Lateral Perovskite Heterostructures via Ion Gel Gating

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An Ultralow Power Li_xTiO₂‐Based Synaptic Transistor for Scalable Neuromorphic Computing

An Ultralow Power Li_xTiO₂‐Based Synaptic Transistor for Scalable Neuromorphic Computing

Solid‐State Optoelectronic Synapse Transistor Using a LaF₃ Gate Dielectric